FDS5690

FDS5690 FDS5690 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. • • Low gate charge (23nC typical). These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • Fast switching speed. • High performance trench technology for extremely low RDS(ON). Applications • High power and current handling capability. • • 7 A, 60 V. RDS(on) = 0.028 Ω @ VGS = 10 V RDS(on) = 0.033 Ω @ VGS = 6 V. DC/DC converter Motor drives D D D D SO-8 S S S 4 6 3 7 2 8 1 G Absolute Maximum Ratings Symbol 5 TA = 25°C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage V ID Drain Current ±20 7 - Continuous (Note 1a) - Pulsed PD Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, Tstg A 50 Operating and Storage Junction Temperature Range W 1 -55 to +150 °C °C/W °C/W Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient (Note 1a) 50 Thermal Resistance, Junction-to-Case (Note 1) 25 Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS5690 FDS5690 13’’ 12mm 2500 units  2000 Semiconductor Components Industries, LLC. October-2017, Rev.3 Publication Order Number: FDS5690/D Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ ID = 250 µA, Referenced to 25°C IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1 IGSSF Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V 100 µA nA IGSSR Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -100 nA 4 V On Characteristics 60 V mV/°C 57 (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = 250 µA, Referenced to 25°C ID(on) On-State Drain Current VGS = 10 V, ID = 7 A VGS = 10 V, ID = 7 A, TJ=125°C VGS = 6 V, ID = 6.5 A VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 10 V, ID = 7 A 2 2.5 mV/°C -5.9 0.022 0.037 0.025 0.028 0.050 0.033 25 Ω A 24 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 30 V, VGS = 0 V, f = 1.0 MHz 1107 pF 149 pF 72 pF (Note 2) VDD = 30 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω VDS = 30 V, ID = 7 A, VGS = 10 V, 10 18 9 18 ns ns 24 39 ns 10 18 ns 23 32 nC 4 nC 6.8 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.75 2.1 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. a) 50° C/W when mounted on a 0.5 in2 pad of 2 oz. copper. b) 105° C/W when mounted on a 0.02 in2 pad of 2 oz. copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 2 c) 125° C/W when mounted on a 0.003 in2 pad of 2 oz. copper. FDS5690 DMOS Electrical Characteristics FDS5690 Typical Characteristics 50 2 VGS = 10V 6.0V 40 1.8 5.0V 1.6 4.5V 30 VGS = 4.0V 4.5V 1.4 5.0V 20 1.2 4.0V 6.0V 7.0V 10V 10 1 3.5V 0.8 0 0 1 2 3 4 5 0 6 10 20 30 40 50 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 2 0.07 ID = 7A VGS = 10V 1.8 ID = 3.5A 0.06 1.6 0.05 1.4 o TA = 125 C 0.04 1.2 0.03 1 0.8 0.02 0.6 0.01 0.4 o TA = 25 C 0 -50 -25 0 25 50 75 100 125 150 3 4 5 o 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 50 VGS = 0V VDS = 5V o o 25 C TA = -55 C 40 10 o o TA = 125 C 125 C 1 o 25 C 30 o 0.1 -55 C 20 0.01 10 0.001 0.0001 0 2 3 4 5 6 0 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 1.4 FDS5690 Typical Characteristics (continued) 10 1600 f = 1MHz VGS = 0 V ID = 7A VDS = 10V 20V 8 30V 1200 CISS 6 800 4 400 2 COSS CRSS 0 0 0 5 10 15 20 25 0 10 Qg, GATE CHARGE (nC) 20 30 40 50 60 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 50 SINGLE PULSE o 100µs 1ms RDS(ON) LIMIT 10 POWER (W) 10ms 10s DC VGS = 10V SINGLE PULSE 0.1 o TA=25 C 100ms 1s 1 RθJA=125 C/W 40 o 30 20 10 RθJA = 125 C/W o TA = 25 C 0.01 0 0.1 1 10 100 0.001 0.01 VDS, DRAIN-SOURCE VOLTAGE (V) 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 10. Single Pulse Maximum Power Dissipation. Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 0.5 0.2 0.1 0.05 0.02 D = 0.5 R θJA (t) = r(t) * R θJA R θJA = 125°C/W 0.2 0.1 0.05 P(pk) 0.02 0.01 0.01 t1 Single Pulse Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 t2 TJ - TA = P * RθJA (t) 0.005 0.001 0.01 0.1 1 10 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. www.onsemi.com 4 100 300 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com ❖ © Semiconductor Components Industries, LLC N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative www.onsemi.com