FDS6570A

FDS6570A FDS6570A Single N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. • • Low gate charge (47nC typical). These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. • Fast switching speed. • High performance trench technology for extremely low RDS(ON). Applications • DC/DC converter • Load switch • Battery protection • High power and current handling capability. D D 15 A, 20 V. RDS(on) = 0.0075 Ω @ VGS = 4.5 V RDS(on) = 0.010 Ω @ VGS = 2.5 V. D D SO-8 S S S G Absolute Maximum Ratings Symbol 5 4 6 3 7 2 8 1 TA = 25°C unless otherwise noted Parameter FDS6570A Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage V ID Drain Current ±8 15 - Continuous (Note 1a) - Pulsed PD Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, Tstg A 50 Operating and Storage Junction Temperature Range W 1 -55 to +150 °C °C/W °C/W Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient (Note 1a) 50 Thermal Resistance, Junction-to-Case (Note 1) 25 Package Outlines and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDS6570A FDS6570A 13’’ 12mm 2500 units 2000 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: FDS6570A/D Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = 250µA, Referenced to 25°C VDS = 16 V, VGS = 0 V 1 IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA On Characteristics 20 V 29 mV/°C µA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = 250µA, Referenced to 25°C ID(on) On-State Drain Current VGS = 4.5 V, ID =15 A VGS = 4.5 V, ID =15 A, TJ=125°C VGS = 2.5 V, ID =12 A VGS = 4.5 V, VDS = 5.0 V gFS Forward Transconductance VDS = 5 V, ID = 15 A 0.4 0.9 1.5 -4 V mV/°C 0.006 0.009 0.008 0.0075 0.0130 0.0100 25 Ω A 70 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 10 V, VGS = 0 V, f = 1.0 MHz 4700 pF 850 pF 310 pF (Note 2) VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω VDS = 10 V, ID = 15 A, VGS = 5 V, 20 32 ns 27 44 ns 95 133 ns 35 56 ns 47 66 nC 7 nC 10.5 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 0.65 2.1 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθJA is determined by the user's board design. a) 50° C/W when mounted on a 0.5 in2 pad of 2 oz. copper. b) 105° C/W when mounted on a 0.02 in2 pad of 2 oz. copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 2 c) 125° C/W when mounted on a 0.003 in2 pad of 2 oz. copper. FDS6570A Electrical Characteristics FDS6570A Typical Characteristics 2.5 50 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS= 4.5V ID, DRAIN CURRENT (A) 2.5V 40 2.0V 3.0V 30 20 10 1.5V 0 2 VGS= 2.0V 1.5 2.5V 3.0V 4.5V 1 0.5 0 0.4 0.8 1.2 1.6 2 0 10 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.03 1.6 ID= 15A VGS= 4.5V ID= 7.0A RDS(ON), ON RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 ID, DRAIN CURRENT (A) 1.4 1.2 1 0.8 0.024 0.018 0.012 o TJ= 125 C o 25 C 0.006 0.6 -50 -25 0 25 50 75 100 125 150 0 o 1 TJ, JUNCTION TEMPERATURE ( C) 1.5 2 2.5 3 3.5 4 4.5 5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 o VDS= 5V ID, DRAIN CURRENT (A) IS, REVERSE DRAIN CURRENT (A) 50 TJ= -55 C o 25 C o 40 125 C 30 20 10 VGS= 0 10 o TJ=125 C 1 o 25 C o 0.1 125 C 0.01 0.001 0 0.5 1 1.5 2 2.5 0 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 (continued) 5 7000 ID= 13A 6000 4 VDS= 5V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) FDS6570A Typical Characteristics 10V 3 15V 2 1 5000 Ciss 4000 3000 2000 1000 Coss Crss 0 0 0 10 20 30 40 0 50 4 12 16 20 Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 50 100 100µs RDS(ON) Limit SINGLE PULSE o 1ms 10 RθJA=125 C/W 40 o TA=25 C POWER (W) 10ms 100ms 1s 10s 1 DC VGS= 4.5V SINGLE PULSE 0.1 30 20 10 o RθJA= 125 C/W 0.01 0.01 0.1 1 10 0 100 0.001 VDS, DRAIN-SOURCE VOLTAGE (V) 0.01 0.1 1 10 100 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE 1 TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 8 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 0.5 0.2 0.1 0.05 0.02 D = 0.5 R θJA (t) = r(t) * R θJA R θJA = 125°C/W 0.2 0.1 0.05 P(pk) 0.02 0.01 0.01 t1 Single Pulse 0.005 0.002 0.001 0.0001 t2 TJ - TA = P * RθJA (t) Duty Cycle, D = t1 /t2 0.001 0.01 0.1 1 10 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. www.onsemi.com 4 100 300 1000 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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