FDS6630A
N-Channel Logic Level PowerTrenchTM MOSFET
General Description
Features
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
•
•
Low gate charge (5nC typical).
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
•
Fast switching speed.
•
High performance trench technology for extremely
low RDS(ON).
Applications
•
High power and current handling capability.
•
•
•
6.5 A, 30 V. RDS(on) = 0.038 Ω @ VGS = 10 V
RDS(on) = 0.053 Ω @ VGS = 4.5 V
DC/DC converter
Load switch
Motor drives
D
D
D
D
SO-8
pin 1
S
S
S
G
Absolute Maximum Ratings
Symbol
5
4
6
3
7
2
8
1
TA = 25°C unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
V
ID
Drain Current
±20
6.5
- Continuous
(Note 1a)
- Pulsed
PD
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
TJ, Tstg
A
40
Operating and Storage Junction Temperature Range
W
1
-55 to +150
°C
°C/W
°C/W
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
Thermal Resistance, Junction-to-Case
(Note 1)
25
Package Outlines and Ordering Information
Device Marking
Device
Reel Size
Tape Width
Quantity
FDS6630A
FDS6630A
13’’
12mm
2500 units
1999 Fairchild Semiconductor Corporation
FDS6630A Rev. C1
FDS6630A
April 1999
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
30
Typ
Max Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1
IGSSF
Gate-Body Leakage Current, Forward
VGS = 20 V, VDS = 0 V
100
µA
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -20 V, VDS = 0 V
-100
nA
On Characteristics
V
mV/°C
24
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID = 250 µA, Referenced to 25°C
-4
0.028
0.044
0.040
ID(on)
On-State Drain Current
VGS = 10 V, ID = 6.5 A
VGS = 10 V, ID = 6.5 A, TJ=125°C
VGS = 4.5 V, ID = 5.5 A
VGS = 10 V, VDS = 5 V
gFS
Forward Transconductance
VDS = 5 V, ID = 6.5 A
13
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
460
pF
115
pF
45
pF
1
1.7
3
V
mV/°C
0.038
0.060
0.053
20
Ω
A
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
tf
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
(Note 2)
VDD = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
5
11
ns
8
17
ns
Turn-Off Delay Time
17
28
ns
Turn-Off Fall Time
13
24
ns
5
7
nC
VDS = 5 V, ID = 6.5 A,
VGS = 5 V
2
nC
0.9
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 2.1 A
(Note 2)
0.8
2.1
A
1.2
V
Notes:
1: RθJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50° C/W when
mounted on a 1 in2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.04 in2
pad of 2 oz. copper.
c) 125° C/W on a 0.006 in2 pad
of 2 oz. copper.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDS6630A Rev. C1
FDS6630A
Electrical Characteristics
FDS6630A
Typical Characteristics
VGS =10V
35
2.2
6.0V
R DS (ON) , NORMALIZ ED
5.0V
30
4.5V
25
4.0V
20
3.5V
15
10
3.0V
5
DRAIN-SO URCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
40
2.5V
0
0
1
2
3
4
V DS , DRAIN-SOURCE VOLTAGE (V)
1.8
4.0V
1.6
4.5V
5.0V
1.4
6.0V
1.2
1 0V
0.8
0
20
30
40
ID , DRAIN CURRENT (A)
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.12
1.4
R DS(ON) , ON-RESISTANCE (OHM)
I D = 6.5 A
VGS = 10 V
1.2
1
0.8
0.6
-50
I D = 3.3 A
0.1
0.08
0.06
0.04
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
TA = 25°C
0.02
0
-25
TA = 125°C
150
2
4
6
8
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
with Temperature.
10
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
30
40
VDS = 5V
I S , REVERSE DRAIN CURRENT (A)
TA = -55°C
25
ID , DRAIN CURRENT (A)
10
5
1.6
25°C
125°C
20
15
10
5
0
7.0V
1
Figure 1. On-Region Characteristics.
R DS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS= 3.5V
2
1
2
3
4
5
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
6
V GS = 0V
10
1
TA= 125°C
25°C
0.1
-55°C
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
V SD , BODY DIODE FORWARD VOLTAGE (V)
1.4
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS6630A Rev. C1
(continued)
1000
10
I D = 6.5A
VD S= 5V
C iss
500
8
15V
10V
CAPACITANCE (pF)
VGS , G ATE-SOURCE VOLTAG E (V)
FDS6630A
Typical Characteristics
6
4
200
Coss
100
50
2
C rss
f = 1 MHz
V GS = 0 V
0
0
2
4
6
8
10
0.1
0.2
Qg , GATE CHARGE (nC)
50
100
10
IM
10 0
us
1m
s
IT
1 0m
10 0
m
1
1s
1 0s
DC
V GS = 1 0V
SINGL E PU LSE
RθJ A=125 °C/W
TA = 25°C
0.01
0.1
0.3
s
s
o
TA = 25 C
30
20
10
1
3
10
30
VD S , DRAIN-SO URCE VOLTAGE (V)
50
0
0.001
0.01
0.1
1
10
100
1000
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
r(t), NORM ALIZED EFFECTIVE
SINGLE PULSE
o
RθJA = 125 C/W
40
POWER (W)
L
N)
S(O
RD
TR ANSI ENT TH ER MAL RESISTANC E
ID , DRAIN CURRENT (A)
30
Figure 8. Capacitance Characteristics.
Figure 7. Gate-Charge Characteristics.
0.1
0.5
1
2
5
10
V DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.5
0.2
0.1
0.05
D = 0.5
R θJ A (t) = r(t) * R θJ A
R θJ A= 125°C /W
0.2
0.1
00
. 5
P(p k )
00
. 2
0.02
t1
0.0 1
0.01
S i n g le P ul s e
t2
TJ - TA = P * RθJA ( t)
0.0 05
D u t y C y c l e, D = t 1 /t 2
0.0 02
0.0 01
0.0001
0.0 01
0.01
0.1
t 1, TI ME (s e c )
1
10
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS6630A Rev. C1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ISOPLANAR™
MICROWIRE™
POP™
PowerTrench
QFET™
QS™
Quiet Series™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
ACEx™
CoolFET™
CROSSVOLT™
E2CMOSTM
FACT™
FACT Quiet Series™
FAST®
FASTr™
GTO™
HiSeC™
SyncFET™
TinyLogic™
UHC™
VCX™
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. D
