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FDS6670AS
30V N-Channel PowerTrench SyncFET™
General Description
Features
The FDS6670AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON)
The FDS6670AS
and low gate charge.
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
13.5 A, 30 V.
RDS(ON) max= 9.0 m @ VGS = 10 V
RDS(ON) max= 11.5 m @ VGS = 4.5 V
Includes SyncFET Schottky body diode
Low gate charge (27nC typical)
High performance trench technology for extremely low
RDS(ON) and fast switching
Applications
DC/DC converter
High power and current handling capability
Low side notebook
RoHS Compliant
D
D
D
D
SO-8
S
S
S
G
Absolute Maximum Ratings
Symbol
5
4
6
3
7
2
8
1
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
30
V
VGSS
Gate-Source Voltage
20
V
ID
Drain Current
(Note 1a)
13.5
A
PD
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
– Continuous
– Pulsed
50
(Note 1c)
TJ, TSTG
W
1
–55 to +150
C
(Note 1a)
50
C/W
(Note 1)
25
C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA
Thermal Resistance, Junction-to-Ambient
RJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6670AS
FDS6670AS
13’’
12mm
2500 units
©2010 Fairchild Semiconductor Corporation
FDS6670AS Rev.C1
1
www.fairchildsemi.com
FDS6670AS 30V N-Channel PowerTrench® SyncFET™
July 2010
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 1 mA
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
500
A
Gate–Body Leakage
VGS = 20 V,
VDS = 0 V
100
nA
3
V
On Characteristics
30
V
27
ID = 10 mA, Referenced to 25C
mV/C
(Note 2)
VGS(th)
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS, ID = 1 mA
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 10 V,
ID = 13.5 A
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
1
1.7
ID = 10 mA, Referenced to 25C
–4
VGS = 10 V,
ID = 13.5 A
ID = 11.2 A
VGS = 4.5 V,
VGS=10 V, ID =13.5A, TJ=125C
7.5
9
10
mV/C
9
11.5
12.5
50
m
A
66
S
1540
pF
440
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
160
Rg
Gate Resistance
2.1
4.2
10
20
ns
ns
Switching Characteristics
td(on)
(Note 2)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
pF
VDS = 15 V,
VGS = 10 V,
VDS = 15 V,
VGS = 4.5 V,
ID = 1 A,
RGEN = 6
ID = 1 A,
RGEN = 6
5
10
27
44
ns
18
32
ns
13
23
ns
15
27
ns
24
38
ns
13
23
ns
27
38
nC
16
22
Qg(TOT)
Total Gate Charge at Vgs=10V
Qg
Total Gate Charge at Vgs=5V
Qgs
Gate–Source Charge
4.2
nC
Qgd
Gate–Drain Charge
5.1
nC
©2010 Fairchild Semiconductor Corporation
FDS6670AS Rev.C1
VDD = 15 V,
2
ID = 13.5 A,
nC
www.fairchildsemi.com
FDS6670AS 30V N-Channel PowerTrench® SyncFET™
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Drain–Source Diode Characteristics and Maximum Ratings
VSD
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
Notes: 1.
VGS = 0 V, IS = 3.5 A
VGS = 0 V, IS = 7 A
IF = 13.5A,
diF/dt = 300 A/µs
(Note 2)
0.5
0.6
20
(Note 3)
15
(Note 2)
0.7
V
nS
nC
RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder
mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1 in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300
s, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
©2010 Fairchild Semiconductor Corporation
FDS6670AS Rev.C1
3
www.fairchildsemi.com
FDS6670AS 30V N-Channel PowerTrench® SyncFET™
Electrical Characteristics
50
2.6
VGS = 10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.5V
ID, DRAIN CURRENT (A)
4.0V
40
4.5V
6.0V
3.0V
30
20
10
2.5V
2.2
VGS = 3.0V
1.8
3.5V
1.4
4.5V
10V
0.6
0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
0
2
10
20
30
40
50
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
0.025
ID = 13.5A
VGS = 10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
6.0V
1
0
1.2
1
0.8
0.6
ID = 6.75A
0.02
0.015
o
TA = 125 C
0.01
o
TA = 25 C
0.005
-50
-25
0
25
50
75
o
TJ, JUNCTION TEMPERATURE ( C)
100
125
2
Figure 3. On-Resistance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
50
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
40
ID, DRAIN CURRENT (A)
4.0V
30
20
TA = 125oC
o
-55 C
10
25oC
0
1
TA = 125oC
o
25 C
0.1
o
-55 C
0.01
0.001
1
1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
3.5
0
Figure 5. Transfer Characteristics.
©2010 Fairchild Semiconductor Corporation
FDS6670AS Rev.C1
0.1
0.2
0.3
0.4
0.5
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.6
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
4
www.fairchildsemi.com
FDS6670AS 30V N-Channel PowerTrench ®SyncFET™
Typical Characteristics
2400
ID =13.5A
f = 1MHz
VGS = 0 V
VDS = 10V
20V
8
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
15V
6
4
1800
Ciss
1200
Coss
600
2
Crss
0
0
0
5
10
15
20
Qg, GATE CHARGE (nC)
25
0
30
Figure 7. Gate Charge Characteristics.
30
50
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
ID, DRAIN CURRENT (A)
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
100
100
s
1ms
10ms
10
100ms
1s
10s
DC
1
VGS = 10V
SINGLE PULSE
RJA = 125oC/W
0.1
o
TA = 25 C
0.01
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE
RJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.001
100
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
5
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RJA(t) = r(t) * RJA
RJA = 125 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
TJ - TA = P * RJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
©2010 Fairchild Semiconductor Corporation
FDS6670AS Rev.C1
5
www.fairchildsemi.com
FDS6670AS 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6670AS.
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
CURRENT : 0.4A/div
IDSS, REVERSE LEAKAGE CURRENT (A)
0.1
0.01
125oC
0.001
100oC
0.0001
25oC
0.00001
0
10
20
VDS, REVERSE VOLTAGE (V)
30
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
TIME : 12.5ns/div
Figure 12. FDS6670AS SyncFET body diode
reverse recovery characteristic.
CURRENT : 0.4A/div
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6670A).
TIME : 12.5ns/div
Figure 13. Non-SyncFET (FDS6670A) body
diode reverse recovery characteristic.
©2010 Fairchild Semiconductor Corporation
FDS6670AS Rev.C1
6
www.fairchildsemi.com
FDS6670AS 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics (continued)
AccuPower
Auto-SPM
Build it Now
CorePLUS
CorePOWER
CROSSVOLT
CTL
Current Transfer Logic
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficientMax
ESBC
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series
FACT®
FAST®
FastvCore
FETBench
FlashWriter®*
FPS
F-PFS
FRFET®
SM
Global Power Resource
Green FPS
Green FPS e-Series
Gmax
GTO
IntelliMAX
ISOPLANAR
MegaBuck
MICROCOUPLER
MicroFET
MicroPak
MicroPak2
MillerDrive
MotionMax
Motion-SPM
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
®
PDP SPM™
Power-SPM
PowerTrench®
PowerXS™
Programmable Active Droop
QFET®
QS
Quiet Series
RapidConfigure
Saving our world, 1mW/W/kW at a time™
SignalWise
SmartMax
SMART START
SPM®
STEALTH
SuperFET
SuperSOT-3
SuperSOT-6
SuperSOT-8
SupreMOS
SyncFET
Sync-Lock™
®
*
The Power Franchise®
TinyBoost
TinyBuck
TinyCalc
TinyLogic®
TINYOPTO
TinyPower
TinyPWM
TinyWire
TriFault Detect
TRUECURRENT*
SerDes
UHC®
Ultra FRFET
UniFET
VCX
VisualMax
XS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR
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WHICH COVERS THESE PRODUCTS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
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As used herein:
1. Life support devices or systems are devices or systems which, (a) are
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and (c) whose failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be reasonably
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I48
©2010 Fairchild Semiconductor Corporation
FDS6670AS Rev.C1
7
www.fairchildsemi.com
FDS6670AS 30V N-Channel PowerTrench® SyncFET™
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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