FDS6675A
30V P-Channel PowerTrench MOSFET
General Description
Features
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 25V).
• –11 A, –30 V
Applications
• Fast switching speed
• Power management
• High performance trench technology for extremely
low RDS(ON)
RDS(ON) = 13 mΩ @ VGS = –10 V
RDS(ON) = 19 mΩ @ VGS = –4.5 V
• Low gate charge
• Load switch
• Battery protection
• High power and current handling capability
DD
DD
DD
DD
G
SS G
S
SS S
SO-8
Pin 1 SO-8
Absolute Maximum Ratings
Symbol
5
4
6
3
7
2
8
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
–30
V
VGSS
Gate-Source Voltage
±25
V
ID
Drain Current
–11
A
– Continuous
(Note 1a)
– Pulsed
–50
Power Dissipation for Single Operation
PD
TJ, TSTG
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
1
Operating and Storage Junction Temperature Range
–55 to +175
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6675A
FDS6675A
13’’
12mm
2500 units
2003 Fairchild Semiconductor Corporation
FDS6675A Rev C (W)
FDS6675A
February 2003
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
On Characteristics
VGS = 0 V, ID = –250 µA
–30
ID = –250 µA, Referenced to 25°C
V
–23
VDS = –24 V, VGS = 0 V
VGS = ±25 V,
VDS = 0 V
mV/°C
–10
±100
µA
nA
–3
V
(Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
gFS
On–State Drain Current
Forward Transconductance
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VGS = –10 V,
ID = –11 A
ID = –9 A
VGS = –4.5 V,
VGS= –10 V, ID = –11 A, TJ=125°C
VGS = –10 V,
VDS = –5 V
VDS = –5 V,
ID = –11 A
–1
–1.6
5
10
15
14
mV/°C
13
19
18
–50
mΩ
34
A
S
2330
610
300
4
pF
pF
pF
mΩ
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS = –15 V,
f = 1.0 MHz
V GS = 0 V,
VGS=15 mV
f= 1.0 MHz
(Note 2)
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
VDD = –15 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6 Ω
VDS = –15 V,
VGS = –5 V
ID = –11 A,
14
12
70
37
24
6
9
25
22
110
60
34
ns
ns
ns
ns
nC
nC
nC
–2.1
–1.2
A
V
ns
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
trr
Qrr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage VGS = 0 V, IS = –2.1 A
Diode Reverse Recovery Time
IF = –11A
diF/dt = 100A/µs
Diode Reverse Recovery Charge
(Note 2)
–0.7
33
15
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6675A Rev C (W)
FDS6675A
Electrical Characteristics
FDS6675A
Typical Characteristics
50
2.4
-4.5V -4.0V
40
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
VGS = -10V
-6.0V
-3.5V
30
-3.0V
20
10
0
2.2
VGS = - 3.5V
2
1.8
-4.0V
1.6
-4.5V
1.4
-6.0V
1.2
1
-10V
0.8
0
0.5
1
1.5
2
2.5
0
10
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
50
0.05
ID = -11A
VGS = - 10V
1.6
ID = -5.5A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
40
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
1.4
1.2
1
0.8
0.6
0.04
0.03
TA = 125oC
0.02
TA = 25oC
0.01
0
-50
-25
0
25
50
75
100
125
150
175
2
4
TJ, JUNCTION TEMPERATURE (oC)
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
50
TA = -55oC
25oC
-IS, REVERSE DRAIN CURRENT (A)
VDS = -10V
-ID, DRAIN CURRENT (A)
30
-ID, DRAIN CURRENT (A)
40
125oC
30
20
10
0
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
1
1.5
2
2.5
3
3.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6675A Rev C (W)
FDS6675A
Typical Characteristics
3500
VDS = -10V
ID = -11A
f = 1 MHz
VGS = 0 V
3000
-15V
4
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
5
-20V
3
2
Ciss
2500
2000
1500
Coss
1000
1
500
Crss
0
0
5
10
15
20
25
0
30
0
5
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
15
20
25
30
Figure 8. Capacitance Characteristics.
100
50
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
100µ
1ms
10
10ms
100ms
1s
10s
DC
1
VGS = -10V
SINGLE PULSE
RθJA = 125oC/W
0.1
TA = 25oC
0.01
0.1
1
10
100
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
-ID, DRAIN CURRENT (A)
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
0.2
0.1
RθJA = 125oC/W
0.1
0.05
P(pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6675A Rev C (W)
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NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I2
