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tm
FDS6676AS
30V N-Channel PowerTrench® SyncFET™
General Description
Features
The FDS6676AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON)
and low gate charge.
The FDS6676AS
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
•
14.5 A, 30 V.
RDS(ON) max= 6.0 mΩ @ VGS = 10 V
RDS(ON) max= 7.25 mΩ @ VGS = 4.5 V
•
Includes SyncFET Schottky body diode
•
Low gate charge (45nC typical)
•
High performance trench technology for extremely low
RDS(ON) and fast switching
Applications
• DC/DC converter
•
High power and current handling capability
• Low side notebook
•
RoHS Compliant
D
D
D
D
SO-8
S
S
S
G
Absolute Maximum Ratings
Symbol
5
4
6
3
7
2
8
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
(Note 1a)
14.5
A
PD
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
– Continuous
– Pulsed
50
(Note 1c)
TJ, TSTG
W
1
–55 to +150
°C
(Note 1a)
50
°C/W
(Note 1)
25
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6676AS
FDS6676AS
13’’
12mm
2500 units
©2008 Fairchild Semiconductor Corporation
FDS6676AS Rev B2
FDS6676AS 30V N-Channel PowerTrench® SyncFET™
May 2008
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V,
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
500
µA
Gate–Body Leakage
VGS = ±20 V,
VDS = 0 V
±100
nA
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS,
ID = 1 mA
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 10 V,
ID = 14.5 A
∆BVDSS
∆TJ
IDSS
IGSS
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
ID = 1 mA
30
V
20
ID = 10 mA, Referenced to 25°C
mV/°C
(Note 2)
1.5
–4
3
ID = 10 mA, Referenced to 25°C
1
VGS = 10 V,
ID = 14.5 A
VGS = 4.5 V,
ID = 13.2 A
VGS=10 V, ID =14.5A, TJ=125°C
4.5
5.9
6.7
6.0
7.25
8.5
V
mV/°C
50
mΩ
A
66
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
VDS = 15 V,
f = 1.0 MHz
VGS = 15 mV,
V GS = 0 V,
f = 1.0 MHz
2510
pF
710
pF
270
pF
1.6
Ω
2.8
(Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
43
69
ns
tf
Turn–Off Fall Time
29
46
ns
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
34
54
ns
tf
Turn–Off Fall Time
29
46
ns
Qg(TOT)
Total Gate Charge at Vgs=10V
45
63
nC
Qg
Total Gate Charge at Vgs=5V
25
35
Qgs
Gate–Source Charge
7
nC
Qgd
Gate–Drain Charge
8
nC
VDD = 15 V,
VGS = 10 V,
VDD = 15 V,
VGS = 4.5 V,
VDD = 15 V,
ID = 1 A,
RGEN = 6 Ω
ID = 1 A,
RGEN = 6 Ω
ID = 14.5 A,
10
20
ns
12
22
ns
17
31
ns
22
35
ns
nC
FDS6676AS Rev B2
FDS6676AS 30V N-Channel PowerTrench® SyncFET™
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Drain–Source Diode Characteristics and Maximum Ratings
VSD
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
IRM
Diode Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
VGS = 0 V, IS = 3.5 A
VGS = 0 V, IS = 7 A
IF = 14.5A,
diF/dt = 300 A/µs
(Note 2)
(Note 2)
(Note 3)
0.4
0.5
27
0.7
V
nS
1.9
A
26
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when
mounted on a 1 in2
pad of 2 oz copper
b) 105°/W when
mounted on a .04 in2
pad of 2 oz copper
FDS6676AS Rev B2
FDS6676AS 30V N-Channel PowerTrench® SyncFET™
Electrical Characteristics
50
2.4
3.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS = 10V
40
6.0V
4.5V
3.0V
30
20
10
2.5V
0
VGS = 3.0V
2
1.8
1.6
3.5V
1.4
4.0V
4.5V
1.2
6.0V
10V
1
0.8
0
0.25
0.5
0.75
VDS, DRAIN-SOURCE VOLTAGE (V)
1
0
Figure 1. On-Region Characteristics.
20
30
ID, DRAIN CURRENT (A)
40
50
0.016
ID = 7.3 A
RDS(ON), ON-RESISTANCE (OHM)
ID = 14.5A
VGS =10V
1.2
1
0.8
0.6
0.014
0.012
0.01
o
TA = 125 C
0.008
0.006
TA = 25oC
0.004
-55
-35
-15
5
25
45
65
85
o
TJ, JUNCTION TEMPERATURE ( C)
105
125
2
Figure 3. On-Resistance Variation with
Temperature.
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
50
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
40
ID, DRAIN CURRENT (A)
10
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.4
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.2
30
TA = 125oC
-55oC
20
o
25 C
10
0
10
o
TA = 125 C
1
25oC
0.1
-55oC
0.01
0.001
1
1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3.5
0
0.2
0.4
0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.8
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6676AS Rev B2
FDS6676AS 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics
3500
ID = 14.5A
f = 1MHz
VGS = 0 V
3000
8
VDS = 10V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
20V
6
15V
4
2500
Ciss
2000
1500
Coss
1000
2
500
Crss
0
0
0
10
20
30
Qg, GATE CHARGE (nC)
40
50
0
Figure 7. Gate Charge Characteristics.
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
50
RDS(ON) LIMIT
100us
1ms
10
10ms
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
o
RθJA = 125 C/W
0.1
o
TA = 25 C
0.01
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.001
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
ID, DRAIN CURRENT (A)
5
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJC(t) = r(t) * RθJC
RθJC = 125 °C/W
0.2
0.1
0.1
0.05
P(pk
0.02
0.01
t1
t2
0.01
TJ - TC = P * RθJC(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6676AS Rev B2
FDS6676AS 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.1
0.8A/DIV
IDSS, REVERSE LEAKAGE CURRENT (A)
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6676AS.
TA = 125oC
0.01
0.001
TA = 100oC
0.0001
TA = 25oC
0.00001
0
10nS/DIV
Figure 12. FDS6676AS SyncFET body diode
reverse recovery characteristic.
5
10
15
20
VDS, REVERSE VOLTAGE (V)
25
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
0.8A/DIV
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6676).
10nS/DIV
Figure 13. Non-SyncFET (FDS6676) body
diode reverse recovery characteristic.
FDS6676AS Rev B2
30
FDS6676AS 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics (continued)
L
VDS
BVDSS
tP
VGS
RGE
+
DUT
VGS
VDS
IAS
VDD
VDD
-
0V
tp
vary tP to obtain
required peak IAS
IAS
0.01Ω
tAV
Figure 15. Unclamped Inductive Load Test
Circuit
Figure 16. Unclamped Inductive
Waveforms
Same type as
+
-
+
VDD
-
VGS
QG(TOT)
10V
DUT
QGD
QGS
VGS
Ig(REF
Charge, (nC)
Figure 17. Gate Charge Test Circuit
Figure 18. Gate Charge Waveform
tON
VDS
VGS
RGEN
td(ON)
RL
VDS
tr
90%
tOFF
td(OFF
tf
)
90%
+
VDD
DUT
VGSPulse Width ≤ 1µs
Duty Cycle ≤ 0.1%
Figure 19. Switching Time Test
Circuit
-
10%
0V
90%
VGS
0V
10%
50%
10%
50%
Pulse Width
Figure 20. Switching Time Waveforms
FDS6676AS Rev B2
FDS6676AS 30V N-Channel PowerTrench® SyncFET™
Typical Characteristics
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HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
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As used herein:
1.
Life support devices or systems are devices or systems which,
(a) are intended for surgical implant into the body or (b)
support or sustain life, and (c) whose failure to perform when
properly used in accordance with instructions for use provided
in the labeling, can be reasonably expected to result in a
significant injury of the user.
2.
A critical component in any component of a life support,
device, or system whose failure to perform can be reasonably
expected to cause the failure of the life support device or
system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
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This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve the design.
Obsolete
Not In Production
This datasheet contains specifications on a product that is discontinued by
Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
FDS6676AS Rev.B2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
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