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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FDS6679
30 Volt P-Channel PowerTrench® MOSFET
General Description
Features
This P-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers, and battery chargers.
• –13 A, –30 V. RDS(ON) = 9 mΩ @ VGS = –10 V
RDS(ON) = 13 mΩ @ VGS = – 4.5 V
• Extended VGSS range (±25V) for battery applications
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
• High performance trench technology for extremely
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
• High power and current handling capability
D
D
low RDS(ON)
D
D
SO-8
S
S
S
G
Absolute Maximum Ratings
Symbol
5
4
6
3
7
2
8
1
TA=25oC unless otherwise noted
Parameter
Ratings
Units
VDSS
Drain-Source Voltage
–30
V
VGSS
Gate-Source Voltage
±25
V
ID
Drain Current
–13
A
– Continuous
(Note 1a)
– Pulsed
PD
–50
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
TJ, TSTG
W
1.0
–55 to +175
°C
(Note 1a)
50
°C/W
(Note 1)
25
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6679
FDS6679
13’’
12mm
2500 units
©2005 Fairchild Semiconductor Corporation
FDS6679 Rev C1 (W)
FDS6679
March 2005
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = –250 µA
Zero Gate Voltage Drain Current
VDS = –24 V,
VGS = 0 V
–1
µA
IGSS
Gate–Body Leakage
VGS = ±25 V,
VDS = 0 V
±100
nA
–3
V
On Characteristics
VGS(th)
–30
ID = –250 µA, Referenced to 25°C
V
–23
mV/°C
(Note 2)
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
–1
–1.6
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
VGS = –10 V,
ID = –13 A
ID = –11 A
VGS = –4.5 V,
VGS=–10 V, ID =–13 A, TJ=125°C
VGS = –10 V,
VDS = –5 V
gFS
Forward Transconductance
VDS = –5 V,
ID = –13 A
44
S
VDS = –15 V,
f = 1.0 MHz
V GS = 0 V,
3939
pF
972
pF
498
pF
5
7.3
10
9.5
mV/°C
9
13
13
–50
mΩ
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
(Note 2)
VDD = –15 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6 Ω
19
34
ns
10
20
ns
td(off)
Turn–Off Delay Time
110
176
ns
tf
Turn–Off Fall Time
65
104
ns
71
100
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = –15 V,
VGS = –10 V
ID = –13 A,
nC
12
nC
15
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = –2.1 A
Voltage
(Note 2)
–0.7
–2.1
A
–1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W (10 sec)
62.5°C/W steady state
when mounted on a
1in2 pad of 2 oz
copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6679 Rev C1 (W)
FDS6679
Electrical Characteristics
FDS6679
Typical Characteristics
50
3
VGS = -10V
-ID, DRAIN CURRENT (A)
40
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-4.0V
-6.0V
-3.5V
-4.5V
30
-3.0V
20
10
-2.5V
0
VGS = -3.0V
2.6
2.2
1.8
-3.5V
-4.0V
-5.0V
-6.0V
-10V
1
0.6
0
0.5
1
1.5
2
0
10
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
40
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
0.04
ID = -13A
VGS = -10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
30
-ID, DIRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
1.4
1.2
1
0.8
0.6
ID = -7.0A
0.03
TA = 125oC
0.02
TA = 25oC
0.01
0
-50
-25
0
25
50
75
100
125
150
175
2
2.5
TJ, JUNCTION TEMPERATURE (oC)
3
3.5
4
4.5
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
50
-IS, REVERSE DRAIN CURRENT (A)
VDS = -5.0V
-ID, DRAIN CURRENT (A)
-4.5V
1.4
40
30
20
TA = -125oC
10
25oC
-55oC
0
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
1.5
2
2.5
3
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3.5
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6679 Rev C1 (W)
FDS6679
Typical Characteristics
6000
VDS = -5V
ID = -13A
-10V
f = 1 MHz
VGS = 0 V
5000
8
-15V
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
10
6
4
2
CISS
4000
3000
2000
COSS
1000
CRSS
0
0
0
10
20
30
40
50
60
70
80
0
5
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
-ID, DRAIN CURRENT (A)
20
25
30
50
RDS(ON) LIMIT
100µs
1ms
10ms
10
100ms
1s
10s
1
DC
VGS = -10V
SINGLE PULSE
RθJA = 125oC/W
o
TA = 25 C
0.01
0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.001
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
15
Figure 8. Capacitance Characteristics.
100
0.1
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
o
RθJA = 125 C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6679 Rev C1 (W)
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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