FDS6680A

FDS6680A FDS6680A Single N-Channel, Logic Level, PowerTrench® MOSFET Features General Description • 12.5 A, 30 V This N-Channel Logic Level MOSFET is produced using ON Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. RDS(ON) = 13 mΩ @ VGS = 4.5 V • Ultra-low gate charge • High performance trench technology for extremely These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. D D DD • High power and current handling capability G SS G S SS S Pin 1 SO-8 Absolute Maximum Ratings Symbol low RDS(ON) DD DD SO-8 Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current – Continuous Power Dissipation for Single Operation 6 3 7 2 8 1 Ratings Units 30 V 12.5 A 50 (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, TSTG 4 ±20 (Note 1a) – Pulsed PD 5 TA=25oC unless otherwise noted Parameter VDSS RDS(ON) = 9.5 mΩ @ VGS = 10 V Operating and Storage Junction Temperature Range W 1.0 –55 to +150 °C °C/W Thermal Characteristics RθJA Thermal Resistance, Junction-to-Case (Note 1a) 50 RθJC Thermal Resistance, Junction-to-Case (Note 1) 25 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS6680A FDS6680A 13’’ 12mm 2500 units ©2012 Semiconductor Components Industries, LLC. October-2017, Rev. 6 Publication Order Number: FDS6680A/D Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS ID = 250 µA Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V, V 30 25 VGS = 0 V VDS = 24 V, VGS = 0 V, TJ=55°C IGSS VGS = ±20 V, Gate–Body Leakage On Characteristics VDS = 0 V mV/°C 1 µA 10 µA ±100 nA (Note 2) ID = 250 µA VDS = VGS, ID = 250 µA, Referenced to 25°C VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 15 V, ID = 12.5 A 64 S VDS = 15 V, f = 1.0 MHz V GS = 0 V, 1620 pF 380 pF 160 pF Ω 1 VGS = 10 V, ID = 12.5 A VGS = 4.5 V, ID = 10.5 A VGS = 10 V, ID = 12.5 A, TJ=125°C 2 –4.9 3 7.8 9.9 11.0 9.5 13 15 V mV/°C 25 mΩ A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance RG Gate Resistance Switching Characteristics VGS = 15 mV, f = 1.0 MHz 1.3 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 10 19 ns ns (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time 5 10 td(off) Turn–Off Delay Time 27 43 ns tf Turn–Off Fall Time 15 27 ns 16 23 Qg Total Gate Charge Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = 15 V, VGS = 5 V ID = 12.5 A, nC 5 nC 5.8 nC Drain–Source Diode Characteristics and Maximum Ratings trr Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward (Note 2) VGS = 0 V, IS = 2.1 A Voltage Diode Reverse Recovery Time IF = 12.5 A, diF/dt = 100 A/µs Qrr Diode Reverse Recovery Charge IS VSD 0.73 2.1 A 1.2 V 28 ns 18 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°C/W when mounted on a 1in2 pad of 2 oz copper b) 105°C/W when mounted on a .04 in2 pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% www.onsemi.com 2 c) 125°C/W when mounted on a minimum pad. FDS6680A Electrical Characteristics FDS6680A Typical Characteristics 2.2 50 VGS = 10V 6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 40 4.0V 4.5V 3.5V 30 20 10 3.0V 2 VGS = 3.5V 1.8 1.6 1.4 1 1.5 0.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 0 5.0V 6.0V 10V 1 2 0 Figure 1. On-Region Characteristics. 10 20 30 ID, DRAIN CURRENT (A) 40 50 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.03 ID = 12.5A VGS = 10V ID = 6.2A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.5V 1.2 0.8 0 1.4 1.2 1 0.8 0.025 0.02 TA = 125oC 0.015 0.01 TA = 25oC 0.005 0.6 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 2 150 Figure 3. On-Resist ance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 50 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 4.0V 40 30 TA = 125oC o -55 C 20 10 25oC VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0 4 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 FDS6680A Typical Characteristics 2400 f = 1 MHz VGS = 0 V ID = 12.5A 8 VDS = 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 15V 6 20V 4 1800 Ciss 1200 Coss 600 2 Crss 0 0 0 5 10 15 20 25 30 0 5 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 50 RDS(ON) LIMIT P(pk), PEAK TRANSIENT POWER (W) 100µs ID, DRAIN CURRENT (A) 30 Figure 8. Capacitance Characteristics. 100 1ms 10ms 10 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE RθJA = 125oC/W 0.1 TA = 25oC 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE RθJA = 125oC/W 40 TA = 25oC 30 20 10 0 0.001 100 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 0.01 0.1 1 t1, TIME (sec) 10 100 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA 0.2 0.1 o RθJA = 125 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 100 1000 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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