tm
FDS6689S
30V N-Channel PowerTrench® SyncFET™
General Description
Features
The FDS6689S is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies. This 30V MOSFET is designed to
maximize power conversion efficiency, providing a low
RDS(ON) and low gate charge. The FDS6688S includes
an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
•
16 A, 30 V.
RDS(ON) = 5.4 mΩ @ VGS = 10 V
RDS(ON) = 6.5 mΩ @ VGS = 4.5 V
•
•
Includes SyncFET Schottky body diode
High performance trench technology for extremely low
RDS(ON) and fast switching
Applications
• Synchronous Rectifier for DC/DC converter –
•
Notebook Vcore low side switch
•
Point of Load low side switch
D
D
•
High power and current handling capability
•
100% RG (Gate Resistance) tested
D
D
SO-8
S
S
S
G
Absolute Maximum Ratings
Symbol
5
4
6
3
7
2
8
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
16
A
– Continuous
(Note 1a)
– Pulsed
PD
50
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.2
(Note 1c)
TJ, TSTG
W
1
–55 to +150
°C
(Note 1a)
50
°C/W
(Note 1)
25
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6689S
FDS6689S
13’’
12mm
2500 units
©2007 Fairchild Semiconductor Corporation
FDS6689S Rev B2 (W)
FDS6689S 30V N-Channel PowerTrench SyncFET
November 2007
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ
Max
Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V,
ID = 1 mA
30
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
500
µA
Gate–Body Leakage
VGS = ±20 V,
VDS = 0 V
±100
nA
ID = 1 mA
ID = 10 mA, Referenced to 25°C
V
mV/°C
21
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS,
gFS
Forward Transconductance
1
1.6
3
V
ID = 10 mA, Referenced to 25°C
–5
VGS = 10 V,
ID = 16 A
VGS = 4.5 V,
ID = 14.5 A
VGS=10 V, ID =16 A, TJ=150°C
4.5
5.2
6.1
VDS = 10 V,
74
S
3290
pF
890
pF
ID = 16 A
mV/°C
5.4
6.5
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
290
VGS = 15 mV,
f = 1.0 MHz
1.5
pF
2.6
Ω
(Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
30
46
ns
tf
Turn–Off Fall Time
60
96
ns
Qg(TOT)
Total Gate Charge at VGS=10V
56
78
nC
44
nC
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
VDS = 15 V,
ID = 16 A
12
22
ns
12
22
ns
Qg
Total Gate Charge at VGS=5V
31
Qgs
Gate–Source Charge
8.2
nC
Qgd
Gate–Drain Charge
9.0
nC
Drain–Source Diode Characteristics and Maximum Ratings
VSD
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
IRM
Diode Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
VGS = 0 V,
IS = 3.5 A
IF = 16 A,
diF/dt = 300 A/µs
(Note 2)
380
30
(Note 3)
700
mV
ns
2
A
31
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°/W when
mounted on a 1 in2
pad of 2 oz copper
b) 105°/W when
2
mounted on a .04 in
pad of 2 oz copper
c) 125°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
3. See “SyncFET Schottky body diode characteristics” below.
FDS6689S Rev B2 (W)
FDS6689S 30V N-Channel PowerTrench SyncFET
Electrical Characteristics
50
2.6
VGS = 10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
3.0V
ID, DRAIN CURRENT (A)
40
4.5V
3.5V
30
2.5V
20
10
2.2
2
1.8
1.6
3.0V
1.4
3.5V
4.0V
1.2
4.5V
6.0V
10V
1
2.0V
0
0.8
0
0.25
0.5
0.75
VDS, DRAIN-SOURCE VOLTAGE (V)
1
0
Figure 1. On-Region Characteristics.
10
20
30
ID, DRAIN CURRENT (A)
40
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.016
1.6
ID = 16.0A
VGS =10V
ID = 8.0A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 2.5V
2.4
1.4
1.2
1
0.8
0.014
0.012
0.01
TA = 125oC
0.008
0.006
TA = 25oC
0.6
0.004
-50
-25
0
25
50
75
o
TJ, JUNCTION TEMPERATURE ( C)
100
125
2
Figure 3. On-Resistance Variation with
Temperature.
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
50
100
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
40
ID, DRAIN CURRENT (A)
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
30
TA = 125oC
20
25oC
o
10
-55 C
10
TA = 125oC
1
25oC
0.1
o
-55 C
0.01
0.001
0
1
1.5
2
2.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
0
0.2
0.4
0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.8
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6689S Rev B2 (W)
FDS6689S 30V N-Channel PowerTrench SyncFET
Typical Characteristics
5000
ID = 16.0A
f = 1MHz
VGS = 0 V
VDS = 10V
4000
8
20V
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
6
15V
4
2000
Coss
1000
2
Crss
0
0
0
10
20
30
40
Qg, GATE CHARGE (nC)
50
0
60
Figure 7. Gate Charge Characteristics.
5
10
15
20
25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
RDS(ON) LIMIT
P(pk), PEAK TRANSIENT POWER (W)
100
100us
1ms
10
10ms
100ms
1s
10s
1
DC
VGS = 10V
SINGLE PULSE
o
RθJA = 125 C/W
0.1
TA = 25oC
0.01
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.001
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
ID, DRAIN CURRENT (A)
Ciss
3000
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJC(t) = r(t) * RθJC
RθJC = 125 °C/W
0.2
0.1
0.1
0.05
P(pk
0.02
0.01
t1
t2
0.01
TJ - TC = P * RθJC(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6689S Rev B2 (W)
FDS6689S 30V N-Channel PowerTrench SyncFET
Typical Characteristics (continued)
SyncFET Schottky Body Diode
Characteristics
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.1
IDSS, REVERSE LEAKAGE CURRENT (A)
CURRENT : 0.8A/div
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 12 shows the
reverse recovery characteristic of the FDS6689S.
TA = 125oC
0.01
TA = 100oC
0.001
TA = 25oC
0.0001
0.00001
0
5
10
15
20
VDS, REVERSE VOLTAGE (V)
25
30
Figure 14. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
TIME : 12.5ns/div
Figure 12. FDS6689S SyncFET body
diode reverse recovery characteristic.
CURRENT : 0.8A/div
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6688).
TIME : 12.5ns/div
Figure 13. Non-SyncFET (FDS6688) body
diode reverse recovery characteristic.
FDS6689S Rev B2 (W)
FDS6689S 30V N-Channel PowerTrench SyncFET
Typical Characteristics (continued)
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TIME : 12.5ns/div
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF
THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE
UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF
FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE
PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1.
Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body or
(b) support or sustain life, and (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in a significant injury to the user.
2.
A critical component in any component of a life support,
device, or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
tm
Advance Information
Formative or In Design
This datasheet contains the design specifications for product
development. Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild Semiconductor reserves
the right to make changes at any time without notice to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I31
FDS6689S 30V N-Channel PowerTrench SyncFET
TRADEMARKS
