FDS6694
30V N-Channel Fast Switching PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS(ON) and fast switching speed.
• 12 A, 30 V.
Applications
• High performance trench technology for extremely
low RDS(ON)
RDS(ON) = 11 mΩ @ VGS = 10 V
RDS(ON) = 13.5 mΩ @ VGS = 4.5 V
• Low gate charge (13 nC typical)
• DC/DC converter
• High power and current handling capability.
• Power management
• Load switch
DD
DD
DD
DD
G
SS G
S
SS S
SO-8
Pin 1 SO-8
Absolute Maximum Ratings
Symbol
5
4
6
3
7
2
8
1
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
30
V
VGSS
Gate-Source Voltage
±20
V
ID
Drain Current
(Note 1a)
12
A
PD
Power Dissipation for Single Operation
(Note 1a)
2.5
(Note 1b)
1.4
– Continuous
– Pulsed
50
(Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
W
1.2
–55 to +175
°C
°C/W
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1c)
125
°C/W
RθJC
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS6694
FDS6694
13’’
12mm
2500 units
2004 Fairchild Semiconductor Corporation
FDS6694 Rev.E(W)
FDS6694
January 2004
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
ID = 250 µA
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V,
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25°C
VDS = 24 V,
VGS = 0 V
10
µA
IGSS
Gate–Body Leakage
VGS = ±20 V,
VDS = 0 V
±100
nA
3
V
On Characteristics
30
V
22
mV/°C
(Note 2)
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
1
2
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 5 V,
ID = 12 A
50
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
1293
pF
342
pF
–5
VGS = 10 V,
ID = 12 A
VGS = 4.5 V,
ID = 10.5 A
VGS= 10 V, ID = 12 A, TJ=125°C
9.1
11.1
12.2
mV/°C
11
13.5
15
50
mΩ
A
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
136
pF
RG
Gate Resistance
0.84
Ω
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
(Note 2)
VDD = 15 V,
VGS = 10 V,
VDS = 15 V,
VGS = 5 V
ID = –1 A,
RGEN = 6 Ω
ID = 12 A,
9
18
ns
6
12
ns
28
45
ns
10
20
ns
13
19
nC
4
nC
4.7
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
trr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = 2.1 A
(Note 2)
Voltage
Diode Reverse Recovery Time
IF = 12 A,
diF/dt = 100 A/µs
Qrr
Diode Reverse Recovery Charge
VSD
2.1
0.74
1.2
A
V
29
nS
30
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDS6694 Rev.E(W)
FDS6694
Electrical Characteristics
FDS6694
Typical Characteristics
2.2
50
4.5V
6.0V
ID, DRAIN CURRENT (A)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
40
3.5.V
4.0V
30
20
3.0V
10
2
VGS = 3.5V
1.8
1.6
4.0V
1.4
4.5V
1.2
5.0V
10V
0.8
0
0
0.5
1
1.5
0
2
10
20
Figure 1. On-Region Characteristics.
40
50
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.028
1.6
ID = 12A
VGS = 10V
ID = 6A
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
30
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
1.4
1.2
1
0.8
0.6
-50
-25
0
25
50
75
100
125
150
0.024
0.02
0.016
TA = 125oC
0.012
0.008
TA = 25oC
0.004
175
2
4
TJ, JUNCTION TEMPERATURE (oC)
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
TA = -55oC
VDS = 5V
IS, REVERSE DRAIN CURRENT (A)
70
o
25 C
60
ID, DRAIN CURRENT (A)
6.0V
1
o
125
C
50
40
30
20
10
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
1.5
2
2.5
3
3.5
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4.5
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6694 Rev.E(W)
FDS6694
Typical Characteristics
VGS, GATE-SOURCE VOLTAGE (V)
10
2000
VDS = 5V
ID = 12A
f = 1MHz
VGS = 0 V
10V
8
1600
CAPACITANCE (pF)
15V
6
4
CISS
1200
800
COSS
2
400
0
0
CRSS
0
5
10
15
20
25
0
5
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
ID, DRAIN CURRENT (A)
20
25
30
50
100µs
1ms
10ms
10
100ms
1s
10s
DC
1
VGS = 10V
SINGLE PULSE
RθJA = 125oC/W
TA = 25oC
0.01
0.01
0.1
1
10
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.01
100
0.1
1
10
100
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
THERMAL RESISTANCE
r(t), NORMALIZED EFFECTIVE TRANSIENT
15
Figure 8. Capacitance Characteristics.
100
0.1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
R θ JA (t) = r(t) *R θ JA
R θ JA = 125 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
t2
0.01
T J - T A = P * R θ JA (t)
Duty Cycle, D = t 1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t 1 , TIM E ( s e c )
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6694 Rev.E(W)
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CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
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1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I7
