FDS7788
30V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
“low side” synchronous rectifier operation, providing an
extremely low RDS(ON) in a small package.
• 18 A, 30 V. RDS(ON) = 4.0 mΩ @ VGS = 10 V
RDS(ON) = 5.0 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast switching speed
Applications
• High power and current handling capability
• DC/DC converter
• High performance trench technology for extremely
low RDS(ON)
• Load switch
• Motor drives
• RoHS Compliant
D
D
D
D
SO-8
S
S
S
G
Absolute Maximum Ratings
Symbol
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current
– Continuous
(Note 1a)
– Pulsed
PD
3
7
2
8
1
Ratings
Units
30
V
±20
V
18
A
(Note 1a)
661
2.5
(Note 1b)
1.2
(Note 3)
(Note 1c)
TJ, TSTG
6
50
Drain-Source Avalanche Energy
Power Dissipation for Single Operation
EAS
4
TA=25oC unless otherwise noted
Parameter
VDSS
5
1.0
°C
(Note 1a)
50
°C/W
(Note 1)
30
°C/W
Thermal Characteristics
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
W
–55 to +150
Operating and Storage Junction Temperature Range
RθJA
mJ
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
FDS7788
FDS7788
13’’
12mm
2500 units
2008 Fairchild Semiconductor Corporation
FDS7788 Rev F1 (W)
FDS7788
August 2008
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
∆TJ
IDSS
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
10
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –20 V, VDS = 0 V
–100
nA
On Characteristics
30
V
25
mV/°C
(Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID = 250 µA, Referenced to 25°C
–5.4
3.0
3.8
4.3
ID(on)
On–State Drain Current
VGS = 10 V,
VGS = 4.5 V,
VGS = 10 V,
VGS = 10 V,
gFS
Forward Transconductance
VDS = 10 V, ID = 18 A
112
S
VDS = 15 V,
f = 1.0 MHz
3845
pF
1
ID = 18 A
ID = 17 A
ID = 18 A, TJ = 125°C
VDS = 5 V
1.9
3
V
mV/°C
4.0
5.0
6.3
30
mΩ
A
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
V GS = 0 V,
VGS = 15 mV,
f = 1.0 MHz
930
pF
368
pF
1.4
Ω
(Note 2)
VDD = 15 V,
ID = 1 A,
VGS = 10 V, RGEN = 6 Ω
15
27
ns
13
23
ns
Turn–Off Delay Time
62
99
ns
tf
Turn–Off Fall Time
36
58
ns
Qg
Total Gate Charge
37
48
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 15 V,
VGS = 5.0 V
ID = 18 A,
10
nC
14
nC
Drain–Source Diode Characteristics and Maximum Ratings
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 2.1 A
IF = 18 A,
diF/dt = 100 A/µs
(Note 2)
0.7
1.2
V
39
nS
33
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 105°C/W when
mounted on a .04 in2
pad of 2 oz copper
c) 125°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Starting TJ = 25°C, L = 3mH, IAS = 21A, VDD = 30V, VGS = 10V
FDS7788 Rev F1 (W)
FDS7788
Electrical Characteristics
FDS7788
Typical Characteristics
2.2
80
VGS = 10V
4.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
3.5V
4.5V
60
40
20
3.0V
0
VGS = 3.5V
2
1.8
1.6
4.0V
1.4
4.5V
5.0V
1.2
6.0V
10V
1
0.8
0
0.5
1
1.5
0
20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
60
80
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.01
1.6
ID = 18A
VGS = 10V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
40
ID, DRAIN CURRENT (A)
1.4
1.2
1
0.8
0.6
ID = 9A
0.008
0.006
TA = 125oC
0.004
TA = 25oC
0.002
0
-50
-25
0
25
50
75
100
125
150
2
4
o
TJ, JUNCTION TEMPERATURE ( C)
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
80
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V
ID, DRAIN CURRENT (A)
VDS = 5V
60
40
TA =125oC
25oC
20
-55oC
0
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
2
2.5
3
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS7788 Rev F1 (W)
FDS7788
Typical Characteristics
5000
VDS = 10V
ID = 18A
f = 1MHz
VGS = 0 V
15V
4000
8
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
10
20V
6
4
CISS
3000
2000
COSS
2
1000
0
0
CRSS
0
20
40
60
0
80
5
Figure 7. Gate Charge Characteristics.
20
25
30
50
P(pk), PEAK TRANSIENT POWER (W)
100µs
RDS(ON) LIMIT
ID, DRAIN CURRENT (A)
15
Figure 8. Capacitance Characteristics.
100
1ms
10ms
10
100ms
1s
10s
DC
1
VGS = 10V
SINGLE PULSE
o
RθJA = 125 C/W
0.1
o
TA = 25 C
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
40
30
20
10
0
0.001
0.01
0.01
0.1
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
0.01
100
0.1
1
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
0.2
0.1
o
RθJA = 125 C/W
0.1
0.05
P(pk)
0.02
0.01
t1
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS7788 Rev F1 (W)
FDS7788
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Definition of Terms
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Definition
Advance Information
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I35
FDS7788 Rev F1 (W)
