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FDS8447
Single N-Channel PowerTrench® MOSFET
tm
40V, 12.8A, 10.5mΩ
Features
General Description
Max rDS(on) = 10.5mΩ at VGS = 10V, ID = 12.8A
This single N-Channel MOSFET is produced using
Fairchild Semiconductor’s advanced PowerTrench®
process that has been especially tailored to minimize the
on-state resistance and yet maintain superior switching
performance.
Max rDS(on) = 12.3mΩ at VGS = 4.5V, ID = 11.4A
Low gate charge
High performance trench technology for extremely low
rDS(on)
Applications
High power and current handling capability
DC - DC conversion
RoHS compliant
D
D
D
D
G
SO-8
S
Pin 1
S
S
D
5
4 G
D
6
3
S
D
7
2
S
D
8
1
S
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
ID
(Note 1a)
-Pulsed
EAS
TJ, TSTG
Units
V
±20
V
12.8
A
50
Drain-Source Avalanche Energy
Power Dissipation for Single Operation
PD
Ratings
40
(Note 3)
150
(Note 1a)
2.5
(Note 1b)
1
Operating and Storage Junction Temperature Range
mJ
W
°C
-55 to 150
Thermal Characteristics
RθJA
Thermal Resistance-Single operation, Junction to Ambient
RθJC
Thermal Resistance, Junction to Case
(Note 1a)
50
(Note 1)
25
°C/W
Package Marking and Ordering Information
Device Marking
FDS8447
Device
FDS8447
©2006 Fairchild Semiconductor Corporation
FDS8447 Rev. B
Reel Size
13’’
1
Tape Width
12mm
Quantity
2500 units
www.fairchildsemi.com
FDS8447 Single N-Channel PowerTrench® MOSFET
November 2006
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
40
ID = 250µA, referenced to 25°C
V
mV/°C
34
VDS = 32V, VGS = 0V
TJ = 55°C
VGS = ±20V, VDS = 0V
1
µA
10
µA
±100
nA
3
V
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
rDS(on)
Drain to Source On Resistance
gFS
Forward Transconductance
1
1.8
-5
mV/°C
VGS = 10V, ID = 12.8A
9
10.5
VGS = 4.5V, ID = 11.4A
10
12.3
VGS = 10V, ID = 12.8A,TJ = 125°C
13
15
VDS = 10V, ID = 12.8A
mΩ
S
75.3
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 20V, VGS = 0V,
f = 1MHz
2000
2600
pF
250
350
pF
150
250
pF
Ω
f = 1MHz
1.3
VDD = 20V, ID = 12.8A
VGS = 10V, RGEN = 4.5Ω
11
20
ns
14
25
ns
27
42
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
7
14
ns
Qg
Total Gate Charge at VGS = 10V
35
49
nC
Qg
Total Gate Charge at VGS = 5V
19
27
nC
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller”Charge
VDS = 20V, ID = 12.8A,
6
nC
7
nC
Drain-Source Diode Characteristics and Maximum Ratings
VSD
Source to Drain Diode Forward Voltage VGS = 0V, IS = 12.8A (note 2)
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IF = 12.8A, diF/dt = 100A/µs
0.84
1.2
V
19
29
ns
9.5
19
nC
Notes:
1: RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 50°C/W when
mounted on a 1in2
pad of 2 oz copper
b) 125°C/W when mounted on a
minimum pad .
Scale 1:1 on letter size paper
2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
3: Starting TJ = 25°C, L = 3mH, IAS = 10A, VDD = 40V, VGS = 10V.
FDS8447 Rev.B
2
www.fairchildsemi.com
FDS8447 Single N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
50
3.0
40
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS =10V
VGS = 4.5V
30
VGS = 3.5V
20
VGS = 3V
10
0
0.0
0.4
0.8
1.2
1.6
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.2
1.0
0.8
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (oC)
150
Figure 3. Normalized On Resistance vs Junction
Temperature
0.5
0
10
20
30
ID, DRAIN CURRENT(A)
40
50
ID = 12.8A
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
20
TJ = 125oC
15
TJ = 25oC
10
5
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to Source
Voltage
100
IS, REVERSE DRAIN CURRENT (A)
50
ID, DRAIN CURRENT (A)
VGS = 10V
25
1.4
0.6
-50
1.0
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
ID = 12.8A
VGS = 10V
1.6
VGS = 3.5V
VGS = 4.5V
1.5
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.8
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
2.0
2.0
Figure 1. On Region Characteristics
VGS = 3V
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
40
VDS = 5V
30
TJ = 150oC
20
TJ = 25oC
10
TJ
0
1.0
= -55oC
1.5
2.0
2.5
3.0
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4.0
Figure 5. Transfer Characteristics
FDS8447 Rev.B
VGS = 0V
10
1
0.1
0.01
1E-3
0.0
TJ = 150oC
TJ = 25oC
TJ = -55oC
0.2
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
3
www.fairchildsemi.com
FDS8447 Single N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
10
VDD = 10V
8
Ciss
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
4
10
VDD = 20V
6
VDD = 30V
4
2
0
3
10
Coss
2
10
f = 1MHz
VGS = 0V
1
0
10
20
30
Qg, GATE CHARGE(nC)
10
0.1
40
Figure 7. Gate Charge Characteristics
15
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
40
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain to Source Voltage
16
13
TJ = 25oC
10
7
TJ = 125oC
4
12
VGS = 10V
9
VGS = 4.5V
6
3
o
RθJA = 50 C/W
1
0.01
0.1
1
10
tAV, TIME IN AVALANCHE(ms)
0
25
100
P(PK), PEAK TRANSIENT POWER (W)
100us
1ms
0.1
10ms
100ms
1s
SINGLE PULSE
TJ = MAX RATED
10s
TA = 25OC
0.01
0.01
0.1
DC
1
10
100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe Operating Area
FDS8447 Rev.B
100
125
150
Figure 10. Maximum Continuous Drain Current vs
Ambient Temperature
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
75
o
100
1
50
TA, AMBIENT TEMPERATURE ( C)
Figure 9. Unclamped Inductive Switching
Capability
ID, DRAIN CURRENT (A)
Crss
2000
1000
VGS = 10V
100
SINGLE PULSE
RθJA = 125°C/W
TA = 25°C
10
SINGLE PULSE
1
-4
10
-3
10
-2
-1
0
1
10
10
10
10
t, PULSE WIDTH (s)
2
10
3
10
Figure 12. Single Pulse Maximum Power
Dissipation
4
www.fairchildsemi.com
FDS8447 Single N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJA
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
P(PK)
0.01
t1
t2
1E-3
SINGLE PULSE
RθJA(t) = r(t)*RθJA
RθJA = 125oC/W
TJ-TA =P*RθJA
DUTY FACTOR: D = t1/t2
0.0002
-4
10
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
FDS8447 Rev.B
5
www.fairchildsemi.com
FDS8447 Single N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
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Rev. I22
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