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FDS86267P
P-Channel Shielded Gate PowerTrench® MOSFET
-150 V, -2.2 A, 255 mΩ
Features
General Description
Shielded Gate MOSFET Technology
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® process that
incorporates shielded gate technology. The process has been
optimized for the on-state resistance and yet maintain superior
switching performance.
Max rDS(on) = 255 mΩ at VGS = -10 V, ID = -2.2 A
Max rDS(on) = 290 mΩ at VGS = -6 V, ID = -2 A
Very Low rDS(on) Mid Voltage P-channel Silicon Technology
Optimised for Low Qg
Applications
This Product is Optimised for Fast Switching Applications as
well as Load Switch Applications
Active Clamp Switch
100% UIL Tested
Load Switch
RoHS Compliant
D
D
D
D
D
5
4 G
D
6
3 S
D
7
2 S
D
8
1 S
G
SO-8
S
S
Pin 1
S
MOSFET Maximum Ratings TA = 25
Symbol
VDS
Drain to Source Voltage
VGS
Gate to Source Voltage
Parameter
Drain Current
ID
°C unless otherwise noted.
PD
TJ, TSTG
Units
V
±25
V
-Continuous
(Note 1a)
-2.2
-Pulsed
(Note 4)
-34
Single Pulse Avalanche Energy
EAS
Ratings
-150
(Note 3)
54
Power Dissipation
TA = 25 °C
(Note 1a)
2.5
Power Dissipation
TA = 25 °C
(Note 1b)
1.0
Operating and Storage Junction Temperature Range
-55 to +150
A
mJ
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
50
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
125
°C/W
Package Marking and Ordering Information
Device Marking
FDS86267P
Device
FDS86267P
©2015 Fairchild Semiconductor Corporation
FDS86267P Rev 1.0
Package
SO-8
1
Reel Size
13 ’’
Tape Width
12 mm
Quantity
2500 units
www.fairchildsemi.com
FDS86267P P-Channel Shielded Gate PowerTrench® MOSFET
May 2015
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250 μA, VGS = 0 V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = -250 μA, referenced to 25 °C
IDSS
Zero Gate Voltage Drain Current
VDS = -120 V, VGS = 0 V
-1
μA
IGSS
Gate to Source Leakage Current
VGS = ±25 V, VDS = 0 V
±100
nA
-4
V
-150
V
-121
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250 μA, referenced to 25 °C
VGS = -10 V, ID = -2.2 A
191
rDS(on)
Static Drain to Source On Resistance
VGS = -6 V, ID = -2 A
214
290
VGS = -10 V, ID = -2.2 A,TJ = 125 °C
342
448
VDS = -10 V, ID = -2.2 A
6.8
gFS
Forward Transconductance
-2
-3
5
mV/°C
255
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = -75 V, VGS = 0 V,
f = 1 MHz
0.1
806
1130
pF
54
75
pF
1.6
2.3
pF
3
6
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qg
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -75 V, ID = -2.2 A,
VGS = -10 V, RGEN = 6 Ω
9.7
20
ns
2.5
10
ns
17
30
ns
5.7
12
ns
VGS = 0 V to -10 V
11
16
nC
VGS = 0 V to -6 V VDD = -75 V,
ID = -2.2 A
7
10
nC
3.2
nC
1.9
nC
Drain-Source Diode Characteristics
VSD
Source-Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = -2.2 A
(Note 2)
-0.8
-1.3
VGS = 0 V, IS = -2 A
(Note 2)
-0.8
-1.2
65
104
ns
157
251
nC
IF = -2.2 A, di/dt = 100 A/μs
V
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b) 125 °C/W when mounted on a
minimum pad.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.
SS
SF
DS
DF
G
SS
SF
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 3 mH, IAS = -6 A, VDD = -150 V, VGS = -10 V. 100% tested at L = 0.3 mH, IAS = -13 A.
4. Pulsed Id please refer to Fig 11 SOA graph for more details.
©2015 Fairchild Semiconductor Corporation
FDS86267P Rev 1.0
2
www.fairchildsemi.com
FDS86267P P-Channel Shielded Gate PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted.
40
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
10
-ID, DRAIN CURRENT (A)
VGS = -10 V
8
VGS = -6 V
VGS = -5 V
6
VGS = -5.5 V
4
VGS = -4.5 V
2
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0
1
2
3
4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = -5 V
20
10
VGS = -5.5 V VGS = -6 V VGS = -10 V
0
0
2
4
6
8
10
-ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1500
ID = -2.2 A
VGS = -10 V
2.0
rDS(on), DRAIN TO
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-75
SOURCE ON-RESISTANCE (mΩ)
2.2
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
30
5
Figure 1. On Region Characteristics
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
ID = -2.2 A
1000
500
TJ = 125 oC
TJ = 25 oC
0
-50
-25
0
25
50
75
4
100 125 150
TJ, JUNCTION TEMPERATURE (oC)
5
6
7
8
9
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs Gate to
Source Voltage
Figure 3. Normalized On Resistance
vs Junction Temperature
10
-IS, REVERSE DRAIN CURRENT (A)
10
-ID, DRAIN CURRENT (A)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = -4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
8
VDS = -5 V
6
TJ = 150 oC
4
TJ = 25 oC
2
TJ = -55 oC
0
2
3
4
5
6
1
TJ = 25 oC
0.1
TJ = 150
oC
TJ = -55 oC
0.01
0.001
0.0
7
-VGS, GATE TO SOURCE VOLTAGE (V)
0.3
0.6
0.9
1.2
1.5
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
©2015 Fairchild Semiconductor Corporation
FDS86267P Rev 1.0
VGS = 0 V
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDS86267P P-Channel Shielded Gate PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
1000
ID = -2.2 A
Ciss
8
VDD = -75 V
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE (V)
10
6
VDD = -50 V
VDD = -100 V
4
Coss
100
Crss
10
2
f = 1 MHz
VGS = 0 V
0
0
3
6
9
1
0.1
12
Figure 7. Gate Charge Characteristics
100
2.4
-ID, DRAIN CURRENT (A)
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
2.0
VGS = -10 V
1.6
1.2
VGS = -6 V
0.8
0.4
o
RθJA = 50 C/W
1
0.001
0.01
0.1
1
0.0
25
10
50
75
100
125
150
o
tAV, TIME IN AVALANCHE (ms)
TC, CASE TEMPERATURE ( C)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
1000
100
P(PK), PEAK TRANSIENT POWER (W)
THIS AREA IS
LIMITED BY rDS(on)
-ID, DRAIN CURRENT (A)
10
Figure 8. Capacitance vs Drain
to Source Voltage
50
-IAS, AVALANCHE CURRENT (A)
1
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
10
100 μs
1
1 ms
10 ms
100 ms
1s
0.1
0.01
SINGLE PULSE
TJ = MAX RATED
RθJA = 125 oC/W
CURVE BENT TO
MEASURED DATA
TA = 25 oC
0.001
0.01
0.1
1
10
100
10 s
DC
1000
100
TA = 25 oC
10
1
0.1
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, PULSE WIDTH (sec)
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
©2015 Fairchild Semiconductor Corporation
FDS86267P Rev 1.0
SINGLE PULSE
RθJA = 125 oC/W
4
www.fairchildsemi.com
FDS86267P P-Channel Shielded Gate PowerTrench® MOSFET
Typical Characteristics TJ = 25 °C unless otherwise noted
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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