FDS8672S

MOSFET – N-Channel, POWERTRENCH), SyncFETE FDS8672S General Description The FDS8672S is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30 V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(on) and low gate charge. The FDS8672S includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using ON Semiconductor’s monolithic SyncFET technology. www.onsemi.com D D D D Features • • • • • • • Max RDS(on) = 4.8 mW at VGS = 10 V, ID = 18 A Max RDS(on) = 7.0 mW at VGS = 4.5 V, ID = 15 A Includes SyncFET Schottky Body Diode High Performance Trench Technology for Extremely Low RDS(on) and Fast Switching High Power and Current Handling Capability 100% Rg (Gate Resistance) Tested This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant Pin 1 S S S G SOIC8 CASE 751EB MARKING DIAGRAM $Y&Z&2&K FDS Applications • Notebook Vcore Low Side Switch • Synchronous Rectifier for DC/DC Converters • Point of Load Low Side Switch 8672S &Y &Z &2 &K FDS8672S = ON Semiconductor Logo = Assembly Plant Code = Numeric Date Code = Lot Code = Specific Device Code PIN CONFIGURATION D 5 4 G D 6 3 S D 7 2 S D 8 1 S ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2007 November, 2019 − Rev. 2 1 Publication Order Number: FDS8672S/D FDS8672S MOSFET MAXIMUM RATINGS (TA = 25°C Unless Otherwise Noted) Parameter Symbol Ratings Unit VDS Drain to Source Voltage 30 V VGS Gate to Source Voltage ±20 V Drain Current −Continuous 18 A Drain Current −Pulsed (Note 4) 80 Single Pulse Avalanche Energy (Note 3) 216 Power Dissipation TA = 25°C (Note 1a) 2.5 Power Dissipation TA = 25°C (Note 1b) 1.0 ID EAS PD TJ, TSTG Operating and Storage Junction Temperature Range mJ W −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Symbol Parameter Ratings Unit °C/W RθJC Thermal Resistance, Junction to Case (Note 1) 25 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 50 ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless Otherwise Noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500 mA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS= 0 V ±100 nA BVDSS 30 V 33 mV/°C ON CHARACTERISTICS VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA DVGS(th) / DTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25°C −5 Static Drain to Source On Resistance VGS = 10 V, ID = 18 A 3.8 4.8 VGS = 4.5 V, ID = 15 A 5.3 7.0 VGS = 10 V, ID = 18 A, TJ = 125°C 5.3 7.8 VDS = 5 V, ID = 18 A 78 RDS(on) gFS Forward Transconductance 1.0 2.1 3.0 V mV/°C mW S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg VDS = 15 V, VGS = 0 V, f = 1 MHz 2005 2670 pF 985 1310 pF 135 205 pF f = 1 MHz 0.6 2.0 W VDD = 15 V, ID = 18 A, VGS = 10 V, RGEN = 6 W 12 22 ns 4 10 ns Turn−Off Delay Time 26 42 ns Fall Time 3 10 ns Gate Resistance SWITCHING CHARACTERISTICS td(on) tr td(off) tf Turn−On Delay Time Rise Time www.onsemi.com 2 FDS8672S ELECTRICAL CHARACTERISTICS (TJ = 25°C Unless Otherwise Noted) (continued) Parameter Symbol Min Test Conditions Typ Max Unit 29 41 nC 15 21 nC SWITCHING CHARACTERISTICS VDD = 15 V, ID = 18 A Qg Total Gate Charge VGS = 0 V to 10 V Qg Total Gate Charge VGS = 0 V to 5 V Qgs Gate to Source Charge 5.5 nC Qgd Gate to Drain “Miller” Charge 3.7 nC DRAIN−SOURCE DIODE CHARACTERISTICS Source to Drain Diode Forward Voltage VGS = 0 V, IS = 18 A VGS = 0 V, IS = 1.8 A 0.8 0.4 1.2 0.7 V trr Reverse Recovery Time IF = 18 A, di/dt = 300 A/ms 27 43 ns Qrr Reverse Recovery Charge 31 50 nC VSD Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTES: 1. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqJC is guaranteed by design while RqCA is determined by the user’s board design. a. 50°C/W when mounted on a 1in2 pad of 2 oz copper. b. 125°C/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%. 3. Starting TJ = 25°C, L = 3 mH, IAS = 12 A, VDD = 30 V, VGS = 10 V. 4. Pulse current was measured at 250 ms pulse, refer to Figure x11 Forward Safe Operation Area for detail. PACKAGE MARKING AND ORDERING INFORMATION Device Marking Device Package Reel Size Tape Width Shipping† FDS8672S FDS8672S SOIC8 13″ 12 mm 2,500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 3 FDS8672S TYPICAL CHARACTERISTICS (TJ = 25°C Unless Otherwise Noted) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 80 ID, DRAIN CURRENT (A) VGS = 3.5V 60 VGS = 10V VGS = 4.5V 40 VGS = 4V VGS = 3V 20 0 PULSE DURATION = 80m s DUTY CYCLE = 0.5%MAX 0 1 2 3 4.0 PULSE DURATION = 80ms DUTY CYCLE = 0.5%MAX 3.5 VGS = 3V 3.0 2.5 VGS = 3.5V 1.5 VGS = 4.5V 1.0 0.5 VGS = 10V 0 20 RDS(on), DRAIN TO 1.2 1.0 0.8 0 25 50 SOURCE ON−RESISTANCE (mW) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE 15 ID = 18A VGS = 10V 0.6 −75 −50 −25 ID = 18A PULSE DURATION = 80m s DUTY CYCLE = 0.5%MAX 9 TJ = 125oC 6 TJ = 25oC 3 75 100 125 150 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs Junction Temperature Figure 4. On−Resistance vs Gate to Source Voltage 100 80 IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 80m s DUTY CYCLE = 0.5%MAX ID, DRAIN CURRENT (A) 80 12 TJ, JUNCTION TEMPERATURE (5C) 60 VDD = 5V 40 TJ = 125 oC 20 TJ = 25oC 0 60 Figure 2. Normalized On−Resistance vs Drain Current and Gate Voltage Figure 1. On−Region Characteristics 1.4 40 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) 1.6 VGS = 4V 2.0 0 1 2 TJ = −55 oC 3 VGS = 0V 10 TJ = 125oC 1 0.1 TJ = 25oC 0.01 TJ = −55 oC 0.001 0.0 4 0.2 0.4 0.6 0.8 1.0 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current www.onsemi.com 4 1.2 FDS8672S TYPICAL CHARACTERISTICS (Continued) (TJ = 25°C Unless Otherwise Noted) 5000 ID = 18A Ciss 8 VDD = 10V CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = 15V 6 VDD = 20V 4 2 Crss 100 0 0 5 10 15 20 25 1 10 30 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs. Drain to Source Voltage 20 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT(A) f = 1MHz VGS = 0V 60 0.1 30 30 10 TJ = 25oC TJ = 125oC 15 VGS = 10V 10 VGS = 4.5V 5 o RqJA = 50 C/W 1 0.01 0.1 1 10 100 0 25 500 50 75 100 125 150 tAV, TIME IN AVALANCHE(ms) TA, AMBIENT TEMPERATURE (5C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Ambient Temperature p , PEAK TRANSIENT POWER (W) PK 1000 ID, DRAIN CURRENT (A) Coss 1000 100 100 ms 10 1 0.1 1 ms VGS ≤ 10 V SINGLE PULSE TA = 25°C 10 ms 100 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 CURVE BENT TO MEASURED DATA 1 1 sec 10 100 100000 Single Pulse 10000 1000 100 10 1 0.000001 0.00001 0.0001 0.001 VDS, DRAIN−SOURCE VOLTAGE (V) 0.01 0.1 1 10 100 PULSE TIME (sec) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 FDS8672S TYPICAL CHARACTERISTICS (Continued) (TJ = 25°C Unless Otherwise Noted) 100 50% Duty Cycle 10 20% Z θJA ( ℃ /W) 10% 1 5% 2% 1% 0.1 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 PULSE TIME (sec) Figure 13. Junction−to−Ambient Transient Thermal Response Curve SyncFET is trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. POWERTRENCH is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC8 CASE 751EB ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13735G SOIC8 DATE 24 AUG 2017 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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