FDS8812NZ
N-Channel PowerTrench® MOSFET
30V, 20A, 4.0mΩ
Features
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance.
Max rDS(on) = 4.0mΩ at VGS = 10V, ID = 20A
Max rDS(on) = 4.9mΩ at VGS = 4.5V, ID =18A
HBM ESD protection level of 6.4KV typical (note 3)
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
High performance trench technology for extremely low rDS(on)
High power and current handling capability
RoHS compliant
D
D
D
G
D
S
D
S
D
S
D
D
G
SO-8
S
S
S
Pin 1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
-Continuous
Ratings
30
Units
V
±20
V
(Note 1a)
20
-Pulsed
Single Pulse Avalanche Energy
EAS
PD
TJ, TSTG
A
80
(Note 4)
661
Power Dissipation
(Note 1a)
2.5
Power Dissipation
(Note 1b)
1.0
Operating and Storage Junction Temperature Range
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1)
25
50
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
125
°C/W
Package Marking and Ordering Information
Device Marking
FDS8812NZ
©2008 Fairchild Semiconductor Corporation
FDS8812NZ Rev.C1
Device
FDS8812NZ
Reel Size
13”
1
Tape Width
12mm
Quantity
2500 units
www.fairchildsemi.com
FDS8812NZ N-Channel PowerTrench® MOSFET
November 2008
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
30
V
ID = 250µA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24V, VGS = 0V
1
µA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
±10
µA
3
V
19
mV/°C
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250µA, referenced to 25°C
–7
VGS = 10V, ID = 20A
3.1
4.0
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5V, ID = 18A
3.8
4.9
VGS = 10V, ID = 20A, TJ = 125°C
4.2
5.3
VDS = 5V, ID = 20A
87
gFS
Forward Transconductance
1
1.8
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15V, VGS = 0V,
f = 1MHz
f = 1MHz
5205
6925
pF
945
1260
pF
580
870
pF
Ω
1.5
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0V to 10V
Qg
Total Gate Charge
VGS = 0V to 5V
Qgs
Gate to Source Charge
16
nC
Qgd
Gate to Drain “Miller” Charge
18
nC
VDD = 15V, ID = 20A
VGS = 10V, RGEN = 6Ω
VDD = 15V
ID = 20A
18
33
ns
13
24
ns
55
88
ns
12
22
ns
90
126
nC
49
69
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 2.1A
(Note 2)
IF = 20A, di/dt = 100A/µs
0.7
1.2
V
36
54
ns
33
50
nC
Notes:
1. RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain
pins. RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 50°C/W when mounted on
a 1in2 pad of 2 oz copper.
b) 125°C/W when mounted on
a minimum pad .
2. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2%.
3. The diode connected between the gate and source serves only as protection against ESD . No gate overvoltage rating is implied.
4. Starting TJ = 25°C, L = 3mH, IAS = 21A, VDD = 30V, VGS = 10V.
FDS8812NZ Rev.C1
2
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FDS8812NZ N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
80
2.5
ID, DRAIN CURRENT (A)
VGS = 4.5V
60
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
VGS = 10.0V
VGS = 3.5V
40
VGS = 3.0V
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS = 3.0V
2.0
VGS = 3.5V
1.5
VGS = 4.0V
VGS = 4.5V
1.0
0.5
VGS = 10.0V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
0
20
60
80
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
1.6
8
ID = 20A
VGS = 10V
1.4
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
Figure 1. On-Region Characteristics
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (oC)
150
Figure 3. Normalized On- Resistance
vs Junction Temperature
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
60
VDD = 5V
40
TJ = 25oC
20
TJ = 150oC
TJ = -55oC
0
1.5
2.0
2.5
3.0
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
ID =10A
6
TJ = 125oC
5
4
TJ = 25oC
3
2
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
100
VGS = 0V
10
1
TJ = 150oC
TJ = 25oC
0.1
TJ = -55oC
0.01
0.001
0.0
4.0
Figure 5. Transfer Characteristics
FDS8812NZ Rev.C1
PULSE DURATION = 80µs
DUTY CYCLE = 0.5%MAX
7
Figure 4. On-Resistance vs Gate to
Source Voltage
80
ID, DRAIN CURRENT (A)
40
ID, DRAIN CURRENT(A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.2
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
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FDS8812NZ N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
10000
ID = 20A
VDD = 10V
6
VDD = 15V
VDD =20V
4
2
0
0
20
40
60
Qg, GATE CHARGE(nC)
80
Coss
1000
Crss
f = 1MHz
VGS = 0V
100
0.1
100
Figure 7. Gate Charge Characteristics
-3
10
Ig, GATE LEAKAGE CURRENT(A)
IAS, AVALANCHE CURRENT(A)
10
TJ = 25oC
TJ = 125oC
1
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE(ms)
1000
VGS = 0V
-4
10
-5
10
TJ = 150oC
-6
10
TJ = 25oC
-7
10
-8
10
-9
10
0
5
10
15
20
25
30
VGS, GATE TO SOURCE VOLTAGE(V)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Gate Leakage Current vs Gate to
Source Voltage
200
100
24
100 µs
ID, DRAIN CURRENT (A)
20
VGS = 10V
16
12
VGS = 4.5V
8
10
1 ms
10 ms
1
0.1
THIS AREA IS
LIMITED BY rDS(on)
100 ms
1s
SINGLE PULSE
TJ = MAX RATED
10 s
RθJA = 125 oC/W
4
o
25
50
75
100
125
0.01
0.01
150
TA = 25 C
0.1
1
10
100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
o
TA, AMBIENT TEMPERATURE ( C)
Figure 11. Maximum Continuous Drain
Current vs Ambient Temperature
FDS8812NZ Rev.C1
DC
o
RθJA = 50 C/W
0
30
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
50
ID, DRAIN CURRENT (A)
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
Figure 12. Forward Bias Safe
Operating Area
4
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FDS8812NZ N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
P(PK), PEAK TRANSIENT POWER (W)
2000
VGS = 10 V
1000
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
SINGLE PULSE
RθJA = 125 oC/W
100
150 – T A
----------------------125
I = I25
TA = 25 oC
TA = 25oC
10
1
0.5
-4
10
-3
-2
10
-1
10
10
1
100
10
1000
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
NORMALIZED THERMAL
IMPEDANCE, ZθJA
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
EAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 125 C/W
0.001
0.005
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
FDS8812NZ Rev.C1
5
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FDS8812NZ N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications may
change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make changes at any time without notice to
improve design.
No Identification Needed
Full Production
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I37
©2008 Fairchild Semiconductor Corporation
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FDS8812NZ N-Channel PowerTrench® MOSFET
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intended to be an exhaustive list of all such trademarks.
