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FDS8813NZ
N-Channel PowerTrench® MOSFET
30V, 18.5A, 4.5mΩ
Features
General Description
Max rDS(on) = 4.5mΩ at VGS = 10V, ID = 18.5A
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process that has
been especially tailored to minimize the on-state resistance.
Max rDS(on) = 6.0mΩ at VGS = 4.5V, ID =16A
HBM ESD protection level of 5.6KV typical (note 3)
This device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
High performance trench technology for extremely low rDS(on)
High power and current handling capability
RoHS compliant
D
D
D
D
G
SO-8
S
S
D
G
D
S
D
S
D
S
S
Pin 1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
-Continuous
Ratings
30
Units
V
±20
V
(Note 1a)
18.5
-Pulsed
Single Pulse Avalanche Energy
EAS
PD
TJ, TSTG
A
74
(Note 4)
337
Power Dissipation
(Note 1a)
2.5
Power Dissipation
(Note 1b)
1.0
Operating and Storage Junction Temperature Range
-55 to +150
mJ
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
(Note 1)
25
50
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
125
°C/W
Package Marking and Ordering Information
Device Marking
FDS8813NZ
©2008 Fairchild Semiconductor Corporation
FDS8813NZ Rev.C2
Device
FDS8813NZ
Reel Size
13”
1
Tape Width
12mm
Quantity
2500 units
www.fairchildsemi.com
FDS8813NZ N-Channel PowerTrench® MOSFET
May 2013
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
30
V
ID = 250μA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 24V, VGS = 0V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
±10
μA
3
V
20
mV/°C
On Characteristics (Note 2)
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250μA, referenced to 25°C
-6
VGS = 10V, ID = 18.5A
3.8
4.5
VGS = 4.5V, ID = 16A
4.7
6.0
VGS = 10V, ID = 18.5A,
TJ = 125°C
5.1
6.6
VDS = 5V, ID = 18.5A
74
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
1
1.8
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 15V, VGS = 0V,
f = 1MHz
f = 1MHz
0.1
3115
4145
pF
580
775
pF
345
520
pF
1.8
5.6
Ω
Switching Characteristics
13
24
ns
8
16
ns
39
63
ns
7
14
ns
55
76
nC
28
40
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0V to 10V
Qg
Total Gate Charge
VGS = 0V to 5V
Qgs
Gate to Source Gate Charge
9
nC
Qgd
Gate to Drain “Miller” Charge
10
nC
VDD = 15V, ID = 18.5A
VGS = 10V, RGEN = 6Ω
VDD = 15V
ID = 18.5A
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 2.1A
(Note 2)
IF = 18.5A, di/dt = 100A/μs
0.7
1.2
V
32
47
ns
27
41
nC
Notes
1. RθJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθJA is determined by the user’s board design.
a) 50°C/W when mounted on a
1in2 pad of 2 oz copper
b) 125°C/W when mounted on a
minimum pad .
2. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2%.
3. The diode connected between the gate and source serves only as protection against ESD . No gate overvoltage rating is implied.
4. Starting TJ = 25°C, L = 3mH, IAS = 15A, VDD = 30V, VGS = 10V.
FDS8813NZ Rev.C2
2
www.fairchildsemi.com
FDS8813NZ N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
4.0
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
75
ID, DRAIN CURRENT (A)
VGS = 10.0V
60
VGS = 3.5V
VGS = 4.5V
VGS = 4.0V
45
30
VGS = 3.0V
15
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
3.5
VGS = 3.0V
3.0
2.5
VGS = 3.5V
2.0
VGS = 4V
1.0
VGS = 10.0V
0.5
0
15
Figure 1. On-Region Characteristics
45
60
75
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
10
1.8
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
1.6
rDS(on), DRAIN TO
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
30
ID, DRAIN CURRENT(A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.4
ID =18.5A
VGS = 10V
1.2
1.0
0.8
ID =9.5A
9
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
8
7
6
TJ = 125oC
5
TJ = 25oC
4
3
0.6
-50
-25
0
25
50
75
100 125
TJ, JUNCTION TEMPERATURE (oC)
2
150
Figure 3. Normalized On- Resistance
vs Junction Temperature
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to
Source Voltage
75
100
IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
ID, DRAIN CURRENT (A)
VGS = 4.5V
1.5
60
45
TJ = 150oC
TJ = 25oC
30
15
TJ = -55oC
0
1.5
2.0
2.5
3.0
3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4.0
Figure 5. Transfer Characteristics
FDS8813NZ Rev.C2
VGS = 0V
10
1
TJ = 150oC
TJ = 25oC
0.1
TJ = -55oC
0.01
1E-3
0.0
0.2
0.4
0.6
0.8
1.0
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDS8813NZ N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
10000
ID = 18.5A
Ciss
8
VDD = 15V
VDD = 10V
6
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD =20V
4
2
0
0
10
20
30
40
Qg, GATE CHARGE(nC)
50
Coss
1000
Crss
f = 1MHz
VGS = 0V
100
0.1
60
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
-3
10
10
Ig, GATE LEAKAGE CURRENT(A)
IAS, AVALANCHE CURRENT(A)
30
TJ = 25oC
TJ = 125oC
1
0.01
0.1
1
10
100
tAV, TIME IN AVALANCHE(ms)
VGS = 0V
-4
10
TJ = 150oC
-5
10
-6
10
TJ = 25oC
-7
10
-8
10
-9
10
1000
0
5
10
15
20
25
30
VGS, GATE TO SOURCE VOLTAGE(V)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Gate Leakage Current vs Gate to
Source Voltage
200
100
20
100 μs
VGS = 10V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
50
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
15
10
VGS = 4.5V
o
RθJA = 50 C/W
5
10
1 ms
10 ms
1
0.1
THIS AREA IS
LIMITED BY rDS(on)
100 ms
SINGLE PULSE
TJ = MAX RATED
10 s
1s
RθJA = 125 oC/W
DC
TA = 25 oC
0.01
0.01
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE ( C)
Figure 11. Maximum Continuous Drain
Current vs Ambient Temperature
FDS8813NZ Rev.C2
0.1
1
10
100 200
VDS, DRAIN to SOURCE VOLTAGE (V)
o
Figure 12. Forward Bias Safe
Operating Area
4
www.fairchildsemi.com
FDS8813NZ N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
P(PK), PEAK TRANSIENT POWER (W)
2000
VGS = 10 V
1000
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
SINGLE PULSE
RθJA = 125 oC/W
100
I = I25
o
150 – T
A
-----------------------125
TA = 25 C
TA = 25oC
10
1
0.5
-4
10
-3
-2
10
-1
10
10
1
100
10
1000
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
NORMALIZED THERMAL
IMPEDANCE, ZθJA
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 125 C/W
0.001
0.005
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
FDS8813NZ Rev.C2
5
www.fairchildsemi.com
FDS8813NZ N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Advance Information
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Rev. I64
FDS8813NZ Rev. C2
6
www.fairchildsemi.com
FDS8813NZ N-Channel PowerTrench® MOSFET
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