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or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
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Dual N & P-Channel PowerTrench® MOSFET
N-Channel: 30V, 8.6A, 17.0mΩ P-Channel: -30V, -7.3A, 20.5mΩ
General Description
Features
These dual N and P-Channel enhancement
Q1: N-Channel
MOSFETs
are
produced
using
mode power
ON
Semiconductor’s
Max rDS(on) = 17mΩ at VGS = 10V, ID = 8.6A
advanced PowerTrench process that has been especially
Max rDS(on) = 20mΩ at VGS = 4.5V, ID = 7.3A
tailored to minimize on-state
resistance
and yet maintain
superior switching performance.
Q2: P-Channel
Max rDS(on) = 20.5mΩ at VGS = -10V, ID = -7.3A
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and fast
Max rDS(on) = 34.5mΩ at VGS = -4.5V, ID = -5.6A
High power and handing capability in a widely used surface
mount package
Fast switching speed
switching are required.
Applications
Inverter
Synchronous Buck
D2
D2
D2
5
D2
6
D1
7
D1
8
Q2
4
G2
3
S2
2
G1
1
S1
D1
D1
SO-8
S2
Pin 1
S1
G2
G1
Q1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current
ID
- Continuous
Q1
30
TA = 25°C
- Pulsed
Single Pulse Avalanche Energy
EAS
(Note 3)
Power Dissipation for Dual Operation
PD
Units
V
±20
±25
V
8.6
-7.3
20
-20
50
11
A
mJ
2.0
Power Dissipation for Single Operation
TJ, TSTG
Q2
-30
TA = 25°C
(Note 1a)
1.6
TA = 25°C
(Note 1c)
0.9
Operating and Storage Junction Temperature Range
W
-55 to +150
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
(Note 1)
40
(Note 1a)
78
°C/W
Package Marking and Ordering Information
Device Marking
FDS8858CZ
Device
FDS8858CZ
©2011 Semiconductor Components Industries, LLC.
October-2017,Rev.3
Package
SO-8
Reel Size
13”
Tape Width
12mm
Quantity
2500 units
Publication Order Number:
FDS8858CZ/D
FDS8858CZ Dual N & P-Channel PowerTrench® MOSFET
FDS8858CZ
Symbol
Parameter
Test Conditions
Type
Min
30
-30
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V
ID = -250μA, VGS = 0V
Q1
Q2
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, referenced to 25°C
ID = -250μA, referenced to 25°C
Q1
Q2
IDSS
Zero Gate Voltage Drain Current
VDS = 24V, VGS = 0V
VDS = -24V, VGS = 0V
Q1
Q2
1
-1
μA
IGSS
Gate to Source Leakage Current
VGS = ±20V, VDS = 0V
VGS = ±25V, VDS = 0V
Q1
Q2
±10
±10
μA
3
-3
V
V
22
-22
mV/°C
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250μA
VGS = VDS, ID = -250μA
Q1
Q2
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250μA, referenced to 25°C
ID = -250μA, referenced to 25°C
Q1
Q2
-5.4
6.0
VGS = 10V, ID = 8.6A
VGS = 4.5V, ID = 7.3A
VGS = 10V, ID = 8.6A, TJ = 125°C
Q1
12.4
15.2
17.7
17.0
20.0
24.3
VGS = -10V, ID = -7.3A
VGS = -4.5V, ID = -5.6A
VGS = -10V, ID = -7.3A, TJ = 125°C
Q2
17.1
26.5
24.0
20.5
34.5
28.8
VDS = 5V, ID = 8.6A
VDS = -5V, ID = -7.3A
Q1
Q2
27
21
Q1
VDS = 15V, VGS = 0V, f = 1MHZ
Q1
Q2
905
1675
1205
2230
pF
Q1
Q2
180
290
240
390
pF
Q1
Q2
110
260
165
390
pF
Q1
Q2
1.3
4.4
Q1
Q2
7
9
14
18
ns
Q1
Q2
3
10
10
20
ns
Q1
Q2
19
33
35
53
ns
Q1
Q2
3
16
10
29
ns
Q1
Q2
17
33
24
46
nC
Q1
Q2
2.7
6.1
nC
Q1
Q2
3.4
8.5
nC
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
1
-1
1.6
-2.1
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Q2
VDS = -15V, VGS = 0V, f = 1MHZ
f = 1MHz
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
Q1
VDD = 15V, ID = 8.6A,
VGS = 10V, RGEN = 6Ω
Q2
VDD = -15V, ID = -7.3A,
VGS = -10V, RGEN = 6Ω
Q1
VGS = 10V, VDD = 15V, ID = 8.6A
Q2
VGS = -10V, VDD = -15V, ID = -7.3A
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2
FDS8858CZ Dual N & P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Q1
Q2
0.8
0.9
1.2
-1.2
V
Q1
Q2
25
28
38
42
ns
Q1
Q2
19
22
29
33
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 8.6A
VGS = 0V, IS = -7.3A
(Note 2)
(Note 2)
Q1
IF = 8.6A, di/dt = 100A/s
Q2
IF = -7.3A, di/dt = 100A/s
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user’s board design.
a) 78°C/W when
mounted on a 0.5 in2
pad of 2 oz copper
b) 125°C/W when
mounted on a 0.02 in2
pad of 2 oz copper
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3. Starting TJ = 25°C, N-ch: L = 1mH, IAS = 10A, VDD = 27V, VGS = 10V; P-ch: L = 1mH, IAS = -4.7A, VDD = -27V, VGS = -10V.
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3
c) 135°C/W when
mounted on a
minimun pad
FDS8858CZ Dual N & P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
3.0
20
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
16
ID, DRAIN CURRENT (A)
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = 10V
VGS = 4.5V
VGS = 3.5V
12
VGS = 3.0V
8
4
0
0
1
2
3
2.5
2.0
VGS = 3.5V
1.5
VGS = 4.5V
1.0
VGS = 10V
0.5
0
4
4
1.6
20
rDS(on), DRAIN TO
1.0
0.8
-50
TJ = 25oC
15
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
IS, REVERSE DRAIN CURRENT (A)
16
VDS = 5V
12
TJ = 25oC
8
TJ = 150oC
TJ = -55oC
3
TJ = 125oC
20
Figure 4. On-Resistance vs Gate to
Source Voltage
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
2
25
2
20
1
30
10
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
4
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
ID = 8.6A
Figure 3. Normalized On - Resistance
vs Junction Temperature
ID, DRAIN CURRENT (A)
16
35
ID = 8.6A
VGS = 10V
1.2
0
0
12
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
Figure 1. On- Region Characteristics
0.6
-75
8
ID, DRAIN CURRENT(A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.4
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = 3.0V
4
20
10
VGS = 0V
1
TJ = 150oC
TJ = 25oC
0.1
0.01
TJ = -55oC
0.001
0.0
0.2
0.4
0.6
0.8
1.0
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
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4
1.2
FDS8858CZ Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
VGS, GATE TO SOURCE VOLTAGE(V)
10
3000
ID = 8.6A
Ciss
CAPACITANCE (pF)
8
VDD = 15V
VDD = 10V
6
VDD = 20V
4
2
1000
Coss
Crss
100
50
0.1
0
0
4
8
12
16
20
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
-3
10
TJ = 25oC
TJ =
VDS = 0V
Ig, GATE LEAKAGE CURRENT(A)
IAS, AVALANCHE CURRENT(A)
10
125oC
-4
10
TJ = 125oC
-5
10
TJ = 25oC
-6
10
-7
1
0.01
0.1
1
10
tAV, TIME IN AVALANCHE(ms)
10
100
0
5
10
15
20
25
30
VGS, GATE TO SOURCE VOLTAGE(V)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Gate Leakage Current vs Gate to
Source Voltage
8
ID, DRAIN CURRENT (A)
50
6
VGS = 10V
4
VGS = 4.5V
2
10
1ms
1
10ms
THIS AREA IS
LIMITED BY rDS(on)
100ms
SINGLE PULSE
TJ = MAX RATED
0.1
o
RθJA = 135 C/W
o
RθJA = 78 C/W
0
25
30
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
20
ID, DRAIN CURRENT (A)
f = 1MHz
VGS = 0V
50
TA = 25oC
75
100
125
150
0.01
0.1
1
10
o
TA, AMBIENT TEMPERATURE ( C)
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 12. Forward Bias Safe
Operating Area
Figure 11. Maximum Continuous Drain
Current vs Ambient Temperature
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5
1s
10s
DC
80
FDS8858CZ Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
FDS8858CZ Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics (Q1 N-Channel)TJ = 25°C unless otherwise noted
300
P(PK), PEAK TRANSIENT POWER (W)
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
100
CURRENT AS FOLLOWS:
150 – T
A
-----------------------125
I = I25
TA = 25oC
10
SINGLE PULSE
1
o
RθJA = 135 C/W
0.5
-3
10
-2
-1
10
10
0
1
10
2
10
3
10
10
t, PULSE WIDTH (s)
Figure 13. Single Pulse Maximum Power Dissipation
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
0.0003
-3
10
SINGLE PULSE
RθJA = 135oC/W
-2
10
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJA + TA
-1
10
0
10
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 14. Transient Thermal Response Curve
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6
2
10
3
10
20
4.0
-ID, DRAIN CURRENT (A)
VGS = -10V
16
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = -5V
VGS = -4.5V
12
VGS = -4V
VGS = -3.5V
8
4
VGS = -3V
0
0
1
2
3
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
3.5
VGS = -3.5V
3.0
2.5
VGS = -4V
2.0
1.5
VGS = -5V
1.0
VGS = -10V
0.5
4
0
4
8
Figure 15. On- Region Characteristics
16
20
Figure 16. Normalized on-Resistance vs Drain
Current and Gate Voltage
1.6
60
ID = -7.3A
VGS = -10V
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
0.6
-75
-50
-25
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
ID = -7.3A
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
12
-ID, DRAIN CURRENT(A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
50
40
TJ = 125oC
30
20
TJ = 25oC
10
100 125 150
2
TJ, JUNCTION TEMPERATURE (oC)
4
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 18. On-Resistance vs Gate to
Source Voltage
Figure 17. Normalized On- Resistance
vs Junction Temperature
30
20
-IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
-ID, DRAIN CURRENT (A)
VGS = -4.5V
16
VDS = -5V
12
8
TJ = 25oC
TJ =-55oC
4
TJ = 125oC
0
0
1
2
3
4
5
10
VGS = 0V
1
0.1
TJ = 25oC
TJ = 150oC
0.01
TJ = -55oC
0.001
0.0001
0.0
0.2
0.4
0.6
0.8
1.0
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 20. Source to Drain Diode
Forward Voltage vs Source Current
Figure 19. Transfer Characteristics
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7
1.2
FDS8858CZ Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics (Q2 P-Channel)TJ = 25°C unless otherwise noted
-VGS, GATE TO SOURCE VOLTAGE(V)
10
4000
ID = -7.3A
Ciss
VDD = -10V
8
CAPACITANCE (pF)
VDD = -15V
6
VDD = -20V
4
2
1000
Coss
Crss
f = 1MHz
VGS = 0V
0
0
7
14
21
28
100
0.1
35
1
Figure 22. Capacitance vs Drain
to Source Voltage
Figure 21. Gate Charge Characteristics
-3
10
-Ig, GATE LEAKAGE CURRENT(A)
20
-IAS, AVALANCHE CURRENT(A)
30
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
-Qg, GATE CHARGE(nC)
10
TJ =
25oC
TJ = 125oC
VDS = 0V
-4
10
-5
10
TJ = 125oC
-6
10
-7
10
TJ = 25oC
-8
1
0.01
10
0.1
1
10
0
30
5
10
15
20
25
30
-VGS, GATE TO SOURCE VOLTAGE(V)
tAV, TIME IN AVALANCHE(ms)
Figure 24. Gate Leakage Current vs Gate to
Source Voltage
Figure 23. Unclamped Inductive
Switching Capability
8
6
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
60
VGS = -10V
4
VGS = -4.5V
2
10
1ms
10ms
1
THIS AREA IS
LIMITED BY rDS(on)
0.1
o
o
RθJA = 135 C/W
RθJA = 78 C/W
TA = 25oC
0
25
50
100ms
SINGLE PULSE
TJ = MAX RATED
75
100
125
o
TA, AMBIENT TEMPERATURE ( C)
150
0.01
0.1
1
10
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 25. Maximum Continuous Drain
Current vs Ambient Temperature
Figure 26. Forward Bias Safe
Operating Area
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8
1s
10s
DC
80
FDS8858CZ Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics(Q2 P-Channel)TJ = 25oC unless otherwise noted
300
P(PK), PEAK TRANSIENT POWER (W)
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
100
CURRENT AS FOLLOWS:
150 – T
A
-----------------------125
I = I25
TA = 25oC
10
SINGLE PULSE
1
o
RθJA = 135 C/W
0.5
-3
10
-2
-1
10
10
0
10
1
2
10
3
10
10
t, PULSE WIDTH (s)
Figure 27. Single Pulse Maximum Power Dissipation
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJA + TA
o
RθJA = 135 C/W
0.0003
-3
10
-2
10
-1
10
0
10
1
10
t, RECTANGULAR PULSE DURATION (s)
Figure 28. Transient Thermal Response Curve
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9
2
10
3
10
FDS8858CZ Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics(Q2 P-Channel) TJ = 25oC unless otherwise noted
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