FDS8958A-F085

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Other names and brands may be claimed as the property of others. Dual N & P-Channel PowerTrench MOSFET Features General Description • These dual N- and P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state ressitance and yet maintain superior switching performance. Q1: • Q2: P-Channel 5A, -30V - RDS(on) = 0.052Ω @ VGS = -10V RDS(on) = 0.080Ω @ VGS = -4.5V • Fast switching speed • High power and handling capability in a widely used surface mount package • Qualified to AEC Q101 • RoHS Compliant DD2 DD2 5 DD1 Q2 4 6 7 G2 S2 G SO-8 Pin 1 SO-8 G1 S1 S S 3 Q1 2 8 S Absolute Maximum Ratings Symbol RDS(on) = 0.028Ω @ VGS = 10V RDS(on) = 0.040Ω @ VGS = 4.5V These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. D1 D N-Channel 7.0A, 30V 1 TA = 25°C unless otherwise noted Parameter VDSS VGSS Drain-Source Voltage Gate-Source Voltage ID Drain Current PD - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation Q1 - Continuous 30 (Note 1a) ±20 -5 (Note 1a) 20 2 1.6 -20 2 1.6 W 0.9 54 0.9 13 mJ Single Pulse Avalanche Energy TJ, TSTG Operating and Storage Junction Temperature Range (Note 3) Thermal Resistance, Junction-to-Case A -55 to +150 °C (Note 1a) 78 °C/W (Note 1) 40 °C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient V V 30 EAS RθJC Units ±20 7 (Note 1c) RθJA Q2 FDS8958A-F085 Dual N & P-Channel PowerTrench® MOSFET FDS8958A-F085 Package Marking and Ordering Information Device Marking FDS8958A Device Reel Size Tape width Quantity FDS8958A-F085 13” 12mm 2500 units ©2010 Semiconductor Components Industries, LLC. September-2017, Rev. 1 1 Publication Order Number: FDS8958A-F085/D Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units Off Characteristics BVDSS IGSSF Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward IGSSR Gate-Body Leakage, Reverse VGS = -20 V, ∆BVDSS ∆TJ IDSS On Characteristics ID = 250 µA VGS = 0 V, VGS = 0 V, ID = -250 µA ID = 250 µA, Referenced to 25°C ID = -250 µA, Referenced to 25°C VDS = 24 V, VGS = 0 V VDS = -24 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 0 V Q1 Q2 Q1 Q2 Q1 Q2 All 30 -30 V 25 -23 All mV/°C 1 -1 100 µA -100 nA 3 -3 V nA (Note 2) VGS(th) Gate Threshold Voltage ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID(on) On-State Drain Current gFS Forward Transconductance VDS = VGS, ID = 250 µA VDS = VGS, ID = -250 µA ID = 250 µA, Referenced to 25°C ID = -250 µA, Referenced to 25°C VGS = 10 V, ID = 7 A VGS = 10 V, ID = 7 A, TJ = 125°C ID = 6 A VGS = 4.5 V, ID = -5 A VGS = -10 V, VGS = -10 V, ID = -5 A, TJ = 125°C VGS = -4.5 V, ID = -4 A VGS = 10 V, VDS = 5 V VGS = -10 V, VDS = -5 V VDS = 5 V, ID = 7 A VDS = -5 V, ID =-5 A Q1 Q2 Q1 Q2 Q1 Q1 VDS = 15 V, VGS = 0 V, f = 1.0 MHz Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 1 -1 Q2 Q1 Q2 Q1 Q2 1.9 -1.7 -4.5 4.5 19 27 24 28 42 40 42 57 65 52 78 80 20 -20 mV/°C mΩ A 25 10 S 575 528 145 132 65 70 2.1 6.0 pF Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Q2 Reverse Transfer Capacitance VDS = -15 V, VGS = 0 V, f = 1.0 MHz RG Gate Resistance VGS = 15 mV, f = 1.0 MHz www.onsemi.com 2 pF pF Ω FDS8958A-F085 Dual N & P-Channel PowerTrench® MOSFET Electrical Characteristics Symbol (continued) Parameter Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge TA = 25°C unless otherwise noted Test Conditions Type Min Typ Max Units (Note 2) Q1 VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6 Ω Q2 VDD = -15 V, ID = -1 A, VGS = -10V, RGEN = 6 Ω Q1 VDS = 15 V, ID = 7 A, VGS = 10 V Q2 VDS = -15 V, ID = -5 A,VGS = -10 V Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 8 7 5 13 23 14 3 9 11.4 9.6 1.7 2.2 2.1 1.7 16 14 10 24 37 25 6 17 16 13 ns ns ns ns nC nC nC Drain–Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Plused Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge trr Qrr VGS = 0 V, IS = 1.3 A VGS = 0 V, IS = -1.3 A Q1 IF = 7 A, diF/dt = 100 A/µs Q2 IF = -5 A, diF/dt = 100 A/µs (Note 2) (Note 2) (Note 2) Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 0.75 -0.88 19 19 9 6 1.3 -1.3 20 -20 1.2 -1.2 A A V nS nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user' s board design. a) 78°/W when mounted on a 0.5 in2 pad of 2 oz copper b) 125°/W when 2 mounted on a .02 in pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Starting TJ = 25°C, L = 3mH, IAS = 6A, VDD = 30V, VGS = 10V (Q1). Starting TJ = 25°C, L = 3mH, IAS = 3A, VDD = 30V, VGS = 10V (Q2). www.onsemi.com 3 c) 135°/W when mounted on a minimum pad. FDS8958A-F085 Dual N & P-Channel PowerTrench® MOSFET Electrical Characteristics VGS = 10.0V 2.2 4.0V 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 ID, DRAIN CURRENT (A) 16 6.0V 4.5V 12 8 3.0V 4 1.8 1.4 0 4.5V 5.0 6.0V 10.0V 1 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2 0 Figure 1. On-Region Characteristics. 4 8 12 ID, DRAIN CURRENT (A) 16 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.08 ID = 7A VGS = 10.0V 1.4 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 4.0 0.6 0 1.2 1 0.8 0.6 ID = 3.5A 0.07 0.06 0.05 TA = 125oC 0.04 0.03 TA = 25oC 0.02 0.01 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 20 100 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 16 ID, DRAIN CURRENT (A) VGS = 3.5V 12 TA = 125oC -55oC 8 25oC 4 0 10 TA = 125oC 1 0.1 25oC 0.01 -55oC 0.001 0.0001 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 4 FDS8958A-F085 Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics: Q1 (N-Channel) 10 800 VGS, GATE-SOURCE VOLTAGE (V) ID = 7A VDS = 10V f = 1MHz VGS = 0 V 20V 8 CAPACITANCE (pF) 600 15V 6 4 2 Ciss 400 Coss 200 Crss 0 0 0 2 4 6 8 Qg, GATE CHARGE (nC) 10 0 12 Figure 7. Gate Charge Characteristics. 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 8. Capacitance Characteristics. 100 10 ID, DRAIN CURRENT (A) 10 IAS, AVALANCHE CURRENT (A) 100µs RDS(ON) LIMIT 1ms 10ms 1s 1 100ms 10s DC VGS = 10V SINGLE PULSE RθJA = 135oC/W 0.1 o Tj=25 Tj=125 TA = 25 C 1 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100 0.1 1 10 100 tAV, TIME IN AVALANCHE (mS) Figure 9. Maximum Safe Operating Area. Figure 10. Unclamped Inductive Switching Capability Figure P(pk), PEAK TRANSIENT POWER (W) 50 SINGLE PULSE RθJ A = 135°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 0.1 1 10 t 1, TIME (sec) Figure 11. Single Pulse Maximum Power Dissipation. www.onsemi.com 5 100 1000 FDS8958A-F085 Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics: Q1 (N-Channel) 2 -ID, DRAIN CURRENT (A) VGS = -10V -6.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 30 -5.0V -4.5V 20 -4.0V 10 -3.5V -3.0V 0 1.8 VGS=-4.0V 1.6 -4.5V 1.4 -5.0V -6.0V -7.0V 1.2 1 2 3 4 5 6 0 6 12 -VDS, DRAIN TO SOURCE VOLTAGE (V) 18 24 30 -ID, DRAIN CURRENT (A) Figure 12. On-Region Characteristics. Figure 13. On-Resistance Variation with Drain Current and Gate Voltage. 0.25 1.6 ID = -5A VGS = -10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -10V 1 0.8 0 1.4 1.2 1 0.8 0.6 ID = -2.5A 0.2 0.15 TA = 125oC 0.1 TA = 25oC 0.05 0 -50 -25 0 25 50 75 100 125 150 2 4 TJ, JUNCTION TEMPERATURE (oC) 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 14. On-Resistance Variation with Temperature. Figure 15. On-Resistance Variation with Gate-to-Source Voltage. 15 100 25oC TA = -55oC 12 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) -8.0V 125oC 9 6 3 0 1 1.5 2 2.5 3 3.5 4 4.5 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 16. Transfer Characteristics. VGS =0V 10 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 6 FDS8958A-F085 Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics: Q2 (P-Channel) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 R θJA (t) = r(t) * R θA R θJ A = 135 °C/W 0.2 0.1 0.1 0.05 P(pk) P(pk) 0.02 0.01 tt1 0.01 SINGLE PULSE 0.001 0.0001 0.001 tt22 T J - T A = P * R θJ A(t) Duty Cycle, D = t1 / t 2 0.01 0.1 1 10 t1, TIME (sec) Figure 23. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. www.onsemi.com 7 100 1000 FDS8958A-F085 Dual N & P-Channel PowerTrench® MOSFET Typical Characteristics: Q2 (P-Channel) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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