Dual N & P-Channel PowerTrench® MOSFET
Q1-N-Channel: 30 V, 6.4 A, 26 mΩ Q2-P-Channel: -30 V, -4.5 A, 51 mΩ
General Description
Features
These dual N- and P-Channel enhancement mode power field
effect transistors are produced using ON Semiconductor's
advanced PowerTrench® process th at has been especially
tailored to minimize on-state resistan ce and yet maintain
superior switching performance.
Q1: N-Channel
Max rDS(on) = 26 mΩ at VGS = 10 V, ID = 6.4 A
Max rDS(on) = 39 mΩ at VGS = 4.5 V, ID = 5.2 A
These devices are well suite d for low voltage and battery
powered applications where low in-line power loss and fast
switching are required.
Q2: P-Channel
Max rDS(on) = 51 mΩ at VGS = -10 V, ID = -4.5 A
Max rDS(on) = 80 mΩ at VGS = -4.5 V, ID = -3.3 A
Application
HBM ESD protection level > 3.5 kV (Note 3)
DC-DC Conversion
RoHS Compliant
BLU and motor drive inverter
D2
D2
D1
D1
S1
Pin 1
G1
S2
G2
D2
5
D2
6
D1
7
D1
8
Q2
Q1
4
G2
3
S2
2
G1
1
S1
SO-8
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
Parameter
Q1
30
Drain to Source Voltage
Gate to Source Voltage
Drain Current
- Continuous
TA = 25 °C
- Pulsed
Q2
-30
Units
V
±20
±25
V
6.4
-4.5
30
-30
Power Dissipation for Dual Operation
PD
Power Dissipation for Single Operation
EAS
Single Pulse Avalanche Energy
TJ, TSTG
A
2.0
TA = 25 °C
TA = 25 °C
(Note 1a)
1.6
(Note 1b)
0.9
(Note 4)
Operating and Storage Junction Temperature Range
W
18
5
-55 to +150
mJ
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
(Note 1)
40
(Note 1a)
78
°C/W
Package Marking and Ordering Information
Device Marking
FDS8958B
Device
FDS8958B
©2008 Semiconductor Components Industries, LLC.
October-2017,Rev.3
Package
SO-8
Reel Size
13 ”
Tape Width
12 mm
Quantity
2500 units
Publication Order Number:
FDS8958B/D
FDS8958B Dual N & P-Channel PowerTrench® MOSFET
FDS8958B
Symbol
Parameter
Test Conditions
Type
Min
Q1
Q2
30
-30
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID = 250 µA, VGS = 0 V
ID = -250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
ID = -250 µA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VDS = -24 V, VGS = 0 V
Q1
Q2
V
24
-21
mV/°C
Q1
Q2
1
-1
µA
VGS = ±20 V, VDS = 0 V
VGS = ±25 V, VDS = 0 V
Q1
Q2
±100
±10
nA
µA
VGS = VDS, ID = 250 µA
VGS = VDS, ID = -250 µA
Q1
Q2
3.0
-3.0
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
1.0
-1.0
2.0
-1.9
Q1
Q2
-6
5
Q1
21
29
31
26
39
39
Q2
38
60
53
51
80
72
VDD = 5 V, ID = 6.4 A
VDD = -5 V, ID = -4.5 A
Q1
Q2
20
10
Q1
VDS = 15 V, VGS = 0 V, f = 1 MHZ
Q1
Q2
405
570
540
760
pF
Q1
Q2
75
115
100
155
pF
Q1
Q2
55
100
80
150
pF
Q1
Q2
2.4
4.4
Q1
Q2
4.3
6.0
10
12
ns
Q1
Q2
2.0
6.0
10
12
ns
Q2
VDD = -15 V, ID = -4.5 A,
VGS = -10 V, RGEN = 6 Ω
Q1
Q2
12
17
22
30
ns
Q1
Q2
2.0
7.0
10
14
ns
VGS = 10 V
VGS = -10 V
Q1
Q2
8.3
14
12
19
nC
Q1
Q2
4.1
7.0
5.8
9.6
nC
Q1
Q2
1.3
1.9
nC
Q1
Q2
1.7
3.6
nC
ID = 250 µA, referenced to 25 °C
ID = -250 µA, referenced to 25 °C
VGS = 10 V, ID = 6.4 A
VGS = 4.5 V, ID = 5.2 A
VGS = 10 V, ID = 6.4A, TJ = 125 °C
VGS = -10 V, ID = -4.5 A
VGS = -4.5 V, ID = -3.3 A
VGS = -10 V, ID = -4.5 A, TJ = 125 °C
mV/°C
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
Q2
VDS = -15 V, VGS = 0 V, f = 1 MHZ
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge
Qg(TOT)
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
Q1
VDD = 15 V, ID = 6.4 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 4.5 V
VGS = -4.5 V
Q1
VDD = 15 V,
ID = 6.4 A
Q2
VDD = -15 V,
ID = -4.5 A
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FDS8958B Dual N & P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type
Min
Typ
Max
Units
Q1
Q2
0.8
-0.8
1.2
-1.2
V
Q1
Q2
17
20
30
36
ns
Q1
Q2
6
8
12
16
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 1.3 A
VGS = 0 V, IS = -1.3 A
(Note 2)
(Note 2)
Q1
IF = 6.4 A, di/dt = 100 A/µs
Q2
IF = -4.5 A, di/dt = 100 A/µs
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 78 °C/W when
mounted on a 1 in2
pad of 2 oz copper
b) 135 °C/W when
mounted on a
minimun pad
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
4. UIL condition: Starting TJ = 25 °C, L = 1 mH, IAS = 6 A, VDD = 27 V, VGS = 10 V . (Q1)
Starting TJ = 25 °C, L = 1 mH, IAS = -4 A, VDD = -27 V, VGS = -10 V. (Q2)
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3
FDS8958B Dual N & P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
3.0
VGS = 10 V
VGS = 6 V
24
VGS = 4.5 V
VGS = 4 V
18
12
VGS = 3.5 V
6
0
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0
0.5
1.0
1.5
2.0
2.5
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
30
3.0
VGS = 3.5 V
VGS = 4.5 V
2.0
1.5
VGS = 6 V
1.0
0.5
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
0
6
Figure 1. On Region Characteristics
rDS(on), DRAIN TO
1.0
0.8
0.6
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
1.2
-50
100 125 150
45
TJ = 125 oC
30
TJ = 25 oC
2
30
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VDS = 5 V
10
TJ = 125 oC
TJ = 25 oC
5
TJ = -55 oC
1
2
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
4
6
8
10
Figure 4. On-Resistance vs Gate to
Source Voltage
IS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
ID = 3.2 A
VGS, GATE TO SOURCE VOLTAGE (V)
15
0
60
TJ, JUNCTION TEMPERATURE (oC)
30
20
30
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
15
Figure 3. Normalized On Resistance
vs Junction Temperature
25
24
75
1.4
0.4
-75
18
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
ID = 6.4 A
VGS = 10 V
1.6
12
VGS = 10 V
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.8
VGS = 4 V
2.5
6
VGS = 0 V
10
TJ = 125 oC
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.2
0.4
0.6
0.8
1.0
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
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1.4
FDS8958B Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
1000
ID = 6.4 A
Ciss
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE (V)
10
VDD = 10 V
6
VDD = 15 V
4
VDD = 20 V
2
0
0
2
4
6
8
Coss
100
Crss
f = 1 MHz
VGS = 0 V
10
0.1
10
1
Qg, GATE CHARGE (nC)
ID, DRAIN CURRENT (A)
25 oC
3
2
TJ = 125 oC
THIS AREA IS
LIMITED BY rDS(on)
10
0.1 ms
1 ms
1
0.1
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
RθJA = 135 oC/W
10 s
DC
TA = 25 oC
1
0.001
0.01
0.1
1
10
0.01
0.01
100
tAV, TIME IN AVALANCHE (ms)
0.1
1
10
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Forward Bias Safe
Operating Area
500
P(PK), PEAK TRANSIENT POWER (W)
IAS, AVALANCHE CURRENT (A)
100
9
8
7
6
5
TJ =
30
Figure 8. Capacitance vs Drain
to Source Voltage
Figure 7. Gate Charge Characteristics
4
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
VGS = 10 V
100
SINGLE PULSE
o
RθJA = 135 C/W
o
TA = 25 C
10
1
0.5
-4
10
-3
10
-2
10
-1
10
1
10
t, PULSE WIDTH (sec)
Figure 11. Single Pulse Maximum Power Dissipation
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5
100
1000
FDS8958B Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
0.01
t2
SINGLE PULSE
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
o
RθJA = 135 C/W
0.001
-4
10
-3
10
-2
10
-1
10
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 12. Junction-to-Ambient Transient Thermal Response Curve
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100
1000
FDS8958B Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics (Q1 N-Channel) TJ = 25 °C unless otherwise noted
VGS = -10 V
4.5
VGS = -6 V
24
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
30
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
18
VGS = -4.5 V
12
VGS = -4 V
6
VGS = -3.5 V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
VGS = -3.5 V
4.0
3.5
VGS = -4.5 V
3.0
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5%MAX
2.5
2.0
VGS = -6 V
1.5
1.0
0.5
VGS = -10 V
0
6
rDS(on), DRAIN TO
1.2
1.0
0.8
-50
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
200
ID = -4.5 A
VGS = -10 V
0.6
-75
80
TJ = 125 oC
40
TJ = 25 oC
0
2
TJ = -55 oC
TJ = 25 oC
10
5
1
2
3
4
5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 19. Transfer Characteristics
6
8
10
Figure 18. On-Resistance vs Gate to
Source Voltage
TJ = 125 oC
15
4
-VGS, GATE TO SOURCE VOLTAGE (V)
-IS , REVERSE DRAIN CURRENT (A)
-ID , DRAIN CURRENT (A)
20
0
ID = -2.3 A
30
VDS = -5 V
30
120
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
25
24
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
160
Figure 17. Normalized On-Resistance
vs Junction Temperature
30
18
Figure 16. Normalized on-Resistance vs Drain
Current and Gate Voltage
Figure 15. On- Region Characteristics
1.4
12
-ID, DRAIN CURRENT (A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
1.6
VGS = -4 V
6
VGS = 0 V
10
TJ = 125 oC
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 20. Source to Drain Diode
Forward Voltage vs Source Current
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1.6
FDS8958B Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted
-VGS, GATE TO SOURCE VOLTAGE (V)
10
2000
ID = -4.5 A
1000
8
6
CAPACITANCE (pF)
VDD = -10 V
VDD = -15 V
4
VDD = -20 V
2
0
0
3
6
9
12
Ciss
Coss
100
30
0.1
15
1
-2
10
4
TJ
-Ig, GATE LEAKAGE CURRENT(A)
-IAS, AVALANCHE CURRENT (A)
30
Figure 22. Capacitance vs Drain
to Source Voltage
8
7
6
5
= 25 oC
3
2
TJ = 125 oC
VGS = 0V
-3
10
-4
10
-5
10
TJ = 125oC
-6
10
-7
10
TJ = 25oC
-8
10
-9
1
0.01
0.1
1
10
10
0
5
tAV, TIME IN AVALANCHE (ms)
10
15
20
25
30
35
-VGS, GATE TO SOURCE VOLTAGE(V)
Figure 23. Unclamped Inductive
Switching Capability
Figure 24. Ig vs Vgs
100
200
THIS AREA IS
LIMITED BY rDS(on)
0.1 ms
1 ms
1
0.1
10 ms
100 ms
SINGLE PULSE
TJ = MAX RATED
1s
RθJA = 135 oC/W
10 s
DC
TA = 25 oC
0.01
0.01
0.1
1
10
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 25. Forward Bias Safe
Operating Area
100
P(PK), PEAK TRANSIENT POWER (W)
-ID, DRAIN CURRENT (A)
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 21. Gate Charge Characteristics
10
Crss
f = 1 MHz
VGS = 0 V
VGS = -10 V
100
SINGLE PULSE
RθJA = 135 oC/W
TA = 25 oC
10
1
0.5
-4
10
-3
10
-2
10
-1
10
1
t, PULSE WIDTH (sec)
10
100
1000
Figure 26. Single Pulse Maximum Power
Dissipation
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FDS8958B Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 135 C/W
0.002
-4
10
-3
10
-2
10
-1
10
1
10
t, RECTANGULAR PULSE DURATION (sec)
Figure 27. Junction-to-Ambient Transient Thermal Response Curve
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100
1000
FDS8958B Dual N & P-Channel PowerTrench® MOSFET
Typical Characteristics (Q2 P-Channel) TJ = 25 °C unless otherwise noted
0.65
A
4.90±0.10
(0.635)
8
5
B
1.75
6.00±0.20
1
PIN ONE
INDICATOR
5.60
3.90±0.10
4
1.27
1.27
0.25
C B A
LAND PATTERN RECOMMENDATION
SEE DETAIL A
0.175±0.75
0.22±0.30
C
1.75 MAX
0.10
0.42±0.09
OPTION A - BEVEL EDGE
(0.86) x 45°
R0.10
GAGE PLANE
R0.10
0.36
OPTION B - NO BEVEL EDGE
NOTES: UNLESS OTHERWISE SPECIFIED
8°
0°
SEATING PLANE
0.65±0.25
(1.04)
DETAIL A
SCALE: 2:1
Figure 16.
A) THIS PACKAGE CONFORMS TO JEDEC
MS-012, VARIATION AA.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE MOLD
FLASH OR BURRS.
D) LANDPATTERN STANDARD: SOIC127P600X175-8M.
E) DRAWING FILENAME: M08Arev15
F) FAIRCHILD SEMICONDUCTOR.
8-Lead, SOIC,JEDEC MS-012, .150-inch Narrow Body
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms
and conditions, specifically the warranty therein, which covers ON Semicondutor products.
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FDS8958B — Dual N & P-Channel PowerTrench® MOSFET
Physical Dimensions
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