FDS9431A

FDS9431A P-Channel 2.5V Specified MOSFET Features General Description • This P-Channel 2.5V specified MOSFET is produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize onstate resistance and yet maintain superior switching performance. RDS(ON) = 0.180 Ω @ VGS = -2.5 V. Applications • DC/DC converter • Power management • Load switch • Battery protection D D -3.5 A, -20 V. RDS(ON) = 0.130 Ω @ VGS = -4.5 V • Fast switching speed. • High density cell design for extremely low RDS(ON). • High power and current handling capability. D D SO-8 S S S 4 6 3 7 2 8 1 G Absolute Maximum Ratings Symbol 5 o T A=25 C unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±8 V ID Drain Current -3.5 A - Continuous (Note 1a) - Pulsed PD -18 Power Dissipation for Single Operation (Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range W 1.0 -55 to +150 °C Thermal Characteristics RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 °C/W RqJC Thermal Resistance, Junction-to-Case (Note 1) 25 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDS9431A FDS9431A 13’’ 12mm 2500 units 1999 Semiconductor Components Industries, LLC. October-2017, Rev. 1 Publication Order Number: FDS9431A/D FDS9431A September 1999 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 mA DBVDSS DTJ IDSS Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID = -250 mA,Referenced to 25°C IGSSF Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse IGSSR On Characteristics -20 V -28 mV/°C -1 mA VGS = 8 V, VDS = 0 V 100 nA VGS = -8 V, VDS = 0 V -100 nA VDS = -16 V, VGS = 0 V (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 mA DVGS(th) DTJ RDS(on) Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance ID = -250 mA,Referenced to 25°C ID(on) On-State Drain Current VGS = -4.5 V, ID = -3.5 A VGS = -2.5 V, ID = -3.0 A VGS = -4.5 V, ID = -3.5 A TJ=125°C VGS = -4.5 V, VDS =-5 V gFS Forward Transconductance VDS = -5 V, ID = -3.5 A 6.5 S VDS = -10 V, VGS = 0 V, f = 1.0 MHz 405 pF 170 pF 45 pF -0.4 -0.6 -1 2 V mV/°C 0.110 0.140 0.155 0.130 0.180 0.220 -10 W W W A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) tf Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note 2) VDD = -5 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 W 6.5 13 ns 20 35 ns Turn-Off Delay Time 31 50 ns Turn-Off Fall Time 21 35 ns 6 8.5 nC VDS = -5 V, ID = -3.5 A, VGS = -4.5 V 0.8 nC 1.3 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A (Note 2) -0.7 -2.1 A -1.2 V Notes: 1: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50° C/W when mounted on a 1 in2 pad of 2 oz. copper. b) 105° C/W when mounted on a 0.04 in2 pad of 2 oz. copper. Scale 1 : 1 on letter size paper 2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 2 c) 125° C/W on a minimum mounting pad. FDS9431A Electrical Characteristics FDS9431A Typical Characteristics VGS= -4.5V -3.5V 8 -2.5V RDS(ON) , NORMALIZED -ID, DRAIN CURRENT (A) DRAIN-SOURCE ON-RESISTANCE 10 6 -2.0V 4 2 -1.5V 2 1.8 VGS = -2.0V 1.6 -2.5 1.4 -3.0 1.2 -3.5 -4.0 -4.5 1 0 0 1 2 3 4 0.8 5 0 2 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 10 0.5 I D = -0.8A R DS(ON),ON-RESISTANCE(OHM) I D = -1.6A V GS = -4.5V 1.4 0.4 1.2 0.3 TJ = 125°C 0.2 1 25°C 0.1 0.8 0.6 -50 0 -25 0 25 50 75 100 125 1 150 2 10 TA = -55°C 25°C 125°C 8 4 5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. Figure 3. On-Resistance Variation withTemperature. VDS = -5V 3 -VGS ,GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (°C) -I S , REVERSE DRAIN CURRENT (A) RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 -I D , DRAIN CURRENT (A) 6 -I D , DRAIN CURRENT (A) 6 4 2 0 10 VGS = 0V 1 TJ = 125°C 0.1 25°C -55°C 0.01 0.001 0.0001 0 1 2 3 4 -VGS , GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 -V SD , BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 1.4 (continued) 2000 5 I D = -1.6A V D S = -5V 4 1000 -15V C AP AC I TA NC E (pF) -V GS , G ATE -S O U R CE VO LTAG E (V ) FDS9431A Typical Characteristics 3 2 1 Ciss 500 200 Coss f = 1 M Hz VG S = 0 V 100 0 0 2 4 6 50 0.1 8 0.2 Q g , G ATE C H ARG E (nC ) 50 100 N) 1m IT LI M 10 m 3 100 0. 05 5 10 20 50 SINGLE PULSE o RθJA= 125 C/W s 40 o TA= 25 C s ms 10 s DC VVGS == -4.5V G S -4.5V SINGLE PULSE SING L E PUL SE == 125°C/W RR 135 °C/W θJA J A θ A TTA == 25°C 2 5°C 2 us 1s 0 .5 1 Figure 8. Capacitance Characteristics. POWER (W) - I D , D R AI N C U R R EN T (A) S( O RD 0.5 -V DS , D R A IN T O S OU R CE V OLTA GE (V) Figure 7. Gate Charge Characteristics. 10 Crss 30 20 10 A 0. 01 0 .1 0 .3 1 2 5 10 30 0 0.001 0.01 r(t), NORM ALIZED EFFECTIVE Figure 9. Maximum Safe Operating Area. TR ANSI ENT TH ER MAL RESISTANC E 0.1 1 10 100 SINGLE PULSE TIME (SEC) - VD S , DR A IN -SO UR C E V OLTA GE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 0.2 0.1 0.05 D = 0.5 R θJ A (t) = r(t) * R θJ A R θJ A= 125°C /W 0.2 0.1 0 .0 5 P(p k ) 0 .0 2 0.02 t1 0.0 1 0.01 S i n g le P ul s e t2 TJ - TA = P * RθJA ( t) 0.0 05 D u t y C y c l e, D = t 1 /t 2 0.0 02 0.0 01 0.0001 0.0 01 0.01 0.1 t 1, TI ME (s e c ) 1 10 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. www.onsemi.com 4 100 300 1000 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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