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FDS9958
tm
®
Dual P-Channel PowerTrench MOSFET
-60V, -2.9A, 105mΩ
Features
General Description
Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A
These P-channel logic level specified MOSFETs are produced
using Fairchild Semiconductor’s advanced PowerTrench®
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for superior
switching performance.
Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A
RoHS Compliant
These devices are well suited for portable electronics
applications: load switching and power management, battery
charging and protection circuits.
Applications
Load Switch
Power Management
D2
D2
D1
D1
G2
D2
5
D2
6
D1
7
D1
8
S2
G1
Q2
Q1
4
G2
3
S2
2
G1
1
S1
S1
Pin 1
SO-8
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Drain Current -Continuous
ID
(Note 1a)
-Pulsed
(Note 3)
Power Dissipation for Dual Operation
PD
TJ, TSTG
Units
V
±20
V
-2.9
-12
Single Pulse Avalanche Energy
EAS
Ratings
-60
54
A
mJ
2
Power Dissipation
(Note 1a)
1.6
Power Dissipation
(Note 1b)
0.9
Operating and Storage Junction Temperature Range
-55 to +150
W
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
40
(Note 1a)
78
°C/W
Package Marking and Ordering Information
Device Marking
FDS9958
©2007 Fairchild Semiconductor Corporation
FDS9958 Rev.C
Device
FDS9958
Package
SO-8
1
Reel Size
330mm
Tape Width
12mm
Quantity
2500units
www.fairchildsemi.com
FDS9958 Dual P-Channel PowerTrench® MOSFET
July 2007
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = -250µA, VGS = 0V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
-60
ID = -250µA, referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
V
-52
VDS = -48V,
VGS = 0V
mV/°C
-1
TJ = 125°C
-100
VGS = ±20V, VDS = 0V
µA
±100
nA
-3.0
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250µA
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250µA, referenced to 25°C
rDS(on)
Static Drain to Source On Resistance
gFS
Forward Transconductance
-1.0
-1.6
4
mV/°C
VGS = -10V, ID = -2.9A
82
105
VGS = -4.5V, ID = -2.5A
103
135
VGS = -10V, ID = -2.9A, TJ= 125°C
131
190
VDD = -5V, ID = -2.9A
7.7
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = -30V, VGS = 0V,
f = 1MHz
765
1020
pF
90
120
pF
40
65
pF
6
12
ns
3
10
ns
27
43
ns
6
12
ns
16
23
nC
8
12
nC
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0V to -10V
Qg
Total Gate Charge
VGS = 0V to -4.5V
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
VDD = -30V, ID = -2.9A,
VGS = -10V, RGEN = 6Ω
VDD = -30V,
ID = -2.9A
2
nC
3
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = -1.3A
(Note 2)
IF = -2.9A, di/dt = 100A/µs
-0.8
-1.2
V
26
42
ns
21
35
nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 78°C/W when
mounted on a 1 in2
pad of 2 oz copper
b) 135°C/W when
mounted on a
minimun pad
2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%.
3. UIL condition: Starting TJ = 25°C, L = 3mH, IAS = 6A, VDD = 60V, VGS = 10V.
©2007 Fairchild Semiconductor Corporation
FDS9958 Rev.C
2
www.fairchildsemi.com
FDS9958 Dual P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
VGS = - 4V
VGS = -10V
10
-ID, DRAIN CURRENT (A)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
12
VGS = -3.5V
VGS = -5V
8
VGS = - 4.5V
6
VGS = -3V
4
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
2
2.5
VGS = -3V
2.0
VGS = -3.5V
VGS = -4V
1.5
0
1
2
3
0
4
2
4
6
8
10
12
-ID, DRAIN CURRENT(A)
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
240
1.8
ID = -2.9A
ID = -2.9A
VGS = -10V
1.6
rDS(on), DRAIN TO
1.4
1.2
1.0
0.8
0.6
-75
-50
-25
0
25
50
75
SOURCE ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
VGS = -10V
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
0.5
0
210
TJ = 125oC
150
120
TJ = 25oC
90
60
2
100 125 150
-IS, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
VDD = -5V
8
6
TJ = 150oC
TJ =
2
25oC
TJ = -55oC
1
2
3
4
5
10
VGS = 0V
1
TJ = 150oC
TJ = 25oC
0.1
TJ = -55oC
0.01
0.2
0.4
0.6
0.8
1.0
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
Figure 5. Transfer Characteristics
©2007 Fairchild Semiconductor Corporation
FDS9958 Rev.C
8
20
10
1E-3
0.0
0
0
6
Figure 4. On-Resistance vs Gate to
Source Voltage
12
4
4
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
10
PULSE DURATION = 300µs
DUTY CYCLE = 2.0%MAX
180
TJ, JUNCTION TEMPERATURE (oC)
-ID, DRAIN CURRENT (A)
VGS = -5V
VGS = -4.5V
1.0
3
www.fairchildsemi.com
FDS9958 Dual P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2000
ID = -2.9A
1000
8
VDD = -20V
Ciss
CAPACITANCE (pF)
-VGS, GATE TO SOURCE VOLTAGE(V)
10
6
VDD = -30V
4
VDD = -40V
100
Coss
Crss
2
f = 1MHz
VGS = 0V
10
0.1
0
0
5
10
15
20
4
60
-ID, DRAIN CURRENT (A)
3.0
3
TJ = 25oC
2
TJ = 125oC
2.5
2.0
VGS = -4.5V
VGS = -10V
1.5
1.0
o
RθJA = 78 C/W
0.5
1
0.01
0.1
1
10
0.0
25
100
50
75
100
125
150
o
TA, AMBIENT TEMPERATURE ( C)
tAV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive
Switching Capability
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
20
P(PK), PEAK TRANSIENT POWER (W)
200
10
-ID, DRAIN CURRENT (A)
10
Figure 8. Capacitance vs Drain
to Source Voltage
Figure 7. Gate Charge Characteristics
-IAS, AVALANCHE CURRENT(A)
1
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)
0.1ms
1ms
1
10ms
THIS AREA IS
LIMITED BY rDS(on)
0.1
0.01
0.1
100ms
SINGLE PULSE
TJ = MAX RATED
1s
RθJA = 135oC/W
10s
TA = 25oC
DC
1
10
100 200
-VDS, DRAIN to SOURCE VOLTAGE (V)
VGS = -10V
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
10
1
0.5 -3
10
-2
10
-1
10
0
10
1
2
10
10
3
10
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum
Power Dissipation
Figure 11. Forward Bias Safe
Operating Area
©2007 Fairchild Semiconductor Corporation
FDS9958 Rev.C
100
4
www.fairchildsemi.com
FDS9958 Dual P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
2
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.1
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 135 C/W
0.01
0.005
-3
10
-2
10
-1
0
10
10
1
10
2
10
3
10
t, RECTANGULAR PULSE DURATION (s)
Figure 13. Transient Thermal Response Curve
©2007 Fairchild Semiconductor Corporation
FDS9958 Rev.C
5
www.fairchildsemi.com
FDS9958 Dual P-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
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Rev. I30
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are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
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Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
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