FDT439N

FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize onstate resistance, and provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control. • 6.3 A, 30 V. RDS(on) = 0.045 Ω @ VGS = 4.5 V RDS(on) = 0.058 Ω @ VGS = 2.5 V • Fast switching speed. • High power and current handling capabitlity in a widely used surface mount package. Applications • • • DC/DC converter Load switch Motor driving D D D D S S D G SOT-223 D G Absolute Maximum Ratings Symbol S SOT-223 * Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current - Continuous (Note 1a) - Pulsed PD Power Dissipation for Single Operation S FDT439N Units 30 V ±8 6.3 V A 20 (Note 1a) 3 (Note 1b) 1.3 (Note 1c) TJ, Tstg G TA = 25°C unless otherwise noted Parameter VDSS G (J23Z) Operating and Storage Junction Temperature Range W 1.1 -55 to +150 °C °C/W °C/W Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient (Note 1a) 42 Thermal Resistance, Junction-to-Case (Note 1) 12 Package Marking and Ordering Information Device Marking Device Reel Size Tape Width Quantity FDT439N FDT439N 13’’ 12mm 2500 units ©1999 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: FDT439N/D FDT439N June 1999 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS ∆TJ IDSS Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 IGSSF Gate-Body Leakage Current, Forward VGS = 8 V, VDS = 0 V 100 µA nA IGSSR Gate-Body Leakage Current, Reverse VGS = -8 V, VDS = 0 V -100 nA 1 V On Characteristics 30 V 40 mV/°C (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -2.2 Static Drain-Source On-Resistance 0.038 0.055 0.048 ID(on) On-State Drain Current VGS = 4.5 V, ID = 6.3 A VGS = 4.5 V, ID = 6.3 A, TJ=125°C VGS = 2.5 V, ID = 5.5A VGS = 4.5 V, VDS = 5 V gFS Forward Transconductance VDS = 5 V, ID = 6.3 A 17 S VDS = 15 V, VGS = 0 V, f = 1.0 MHz 500 pF 0.4 0.67 mV/°C 0.045 0.072 0.058 10 Ω A Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) 185 pF 43 pF (Note 2) VDD = 15 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Ω 6 12 ns 10 18 ns Turn-Off Delay Time 30 48 ns tf Turn-Off Fall Time 10 18 ns Qg Total Gate Charge 10.7 15 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS = 15 V, ID = 6.3 A, VGS = 4.5 V, 0.9 nC 3.7 nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A (Note 2) 0.8 2.5 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 42° C/W when mounted on a 1 in2 pad of 2 oz. copper. b) 95° C/W when mounted on a 0.066 in2 pad of 2 oz. copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% www.onsemi.com 2 c) 110° C/W when mounted on a minimum mounting pad. FDT439N Electrical Characteristics FDT439N Typical Characteristics 2 VGS = 4.5V 2.5V 3.0V 16 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN-SOURCE CURRENT (A) 20 2.0V 12 8 1.5V 4 1.8 1.6 VGS = 2.0V 1.4 2.5V 1.2 3.0V 3.5V 4.5V 1 0.8 0 0 1 2 3 0 4 4 8 Figure 1. On-Region Characteristics. 20 0.14 ID = 6.3A VGS = 4.5V 1.5 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 16 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 ID = 3.2A 0.12 0.1 0.08 o TA = 125 C 0.06 0.04 o TA = 25 C 0.02 0 -50 -25 0 25 50 75 100 125 150 1 2 o 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-To-Source Voltage. 100 VDS = 5V IS, REVERSE DRAIN CURRENT (A) 20 ID, DRAIN CURRENT (A) 12 ID, DRAIN CURRENT (A) VDS, DRAIN-SOURCE VOLTAGE (V) o TA = -55 C o 25 C 16 o 125 C 12 8 4 VGS = 0V 10 o TA = 125 C 1 o 25 C o -55 C 0.1 0.01 0.001 0.0001 0 0 0.5 1 1.5 2 2.5 0 3 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 1.2 (continued) 1500 5 ID = 6.3A VDS = 5V f = 1MHz VGS = 0 V 10V 4 1200 15V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) FDT439N Typical Characteristics 3 2 900 600 CISS 1 300 0 0 0 2 4 6 8 10 COSS CRSS 0 12 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate-Charge Characteristics. Figure 8. Capacitance Characteristics. 100 200 o 100µs RθJA = 110 C/W 160 o TA = 25 C 1ms 1s 10s DC 1 VGS = 4.5V SINGLE PULSE 0.1 POWER (W) 10ms 100ms 120 o 80 40 RθJA = 110 C/W o TA = 25 C 0 0.01 0.1 1 10 0.0001 100 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. TRANSIENT THERMAL RESISTANCE 1 r(t), NORMALIZED EFFECTIVE ID, DRAIN CURRENT (A) SINGLE PULSE RDS(ON) LIMIT 10 0.5 D = 0.5 0.2 0.2 0.1 0.05 0.02 R θJA (t) = r(t) * R θJA R θJA = 110°C/W 0.1 0.05 0.02 P(pk) 0.01 0.01 0.005 t1 Single Pulse t2 TJ - TA = P * R θJA (t) 0.002 0.001 0.0001 Duty Cycle, D = t1 / t 2 0.001 0.01 0.1 t1 , TIME (sec) 1 Figure 11. Transient Thermal Response Curve. 10 Thermal characterization performed using the conditions described in Note 1. Transient themal response will change depending on the circuit board design. www.onsemi.com 4 100 300 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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