FDT457N

FDT457N N-Channel Enhancement Mode Field Effect Transistor General Description Features 5 A, 30 V. RDS(ON) = 0.06 Ω @ VGS = 10 V RDS(ON) = 0.090 Ω @ VGS = 4.5 V. These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance. These products are well suited to low voltage, low current applications such as notebook computer power management, battery powered circuits, and DC motor control. SuperSOTTM-3 High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. SuperSOTTM-8 SuperSOTTM-6 SO-8 D D D D S S D SOT-223 D G G S SOT-223* G G S (J23Z) Absolute Maximum Ratings TA = 25oC unless otherwise noted Symbol Parameter VDSS Drain-Source Voltage VGSS Gate-Source Voltage - Continuous ID Maximum Drain Current - Continuous PD Maximum Power Dissipation (Note 1a) - Pulsed TJ,TSTG SOIC-16 SOT-223 FDT457N Units 30 V ±20 V 5 A 16 (Note 1a) 3 (Note 1b) 1.3 (Note 1c) 1.1 Operating and Storage Temperature Range -65 to 150 W °C THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 42 °C/W RθJC Thermal Resistance, Junction-to-Case (Note 1) 12 °C/W * Order option J23Z for cropped center drain lead. © 1998 Semiconductor Components Industries, LLC. October-2017, Rev. 3 Publication Order Number: FDT457N/D Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 C IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA o 35 TJ =55°C ON CHARACTERISTICS o mV/ C 1 µA 10 µA 100 nA (Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA ∆VGS(th)/∆TJ Gate Threshold Voltage Temp.Coefficient ID = 250 µA, Referenced to 25 oC 1 RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 5 A TJ =125°C VGS = 4.5 V, ID = 3.8 A ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V gFS Forward Transconductance VDS = 10 V, ID = 5 A 1.6 3 V mV/ oC -4.2 0.043 0.06 0.065 0.1 0.071 0.09 5 Ω A 5 S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 15 V, VGS = 0 V, f = 1.0 MHz 235 pF 145 pF 50 pF SWITCHING CHARACTERISTICS (Note 2) tD(on) Turn - On Delay Time tr Turn - On Rise Time 5 10 ns 12 22 ns tD(off) tf Turn - Off Delay Time 12 22 ns Turn - Off Fall Time 3 8 ns Qg Total Gate Charge 4.2 5.9 nC Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 10 V, ID = 1 A, VGS = 10 V, RGEN = 6 Ω VDS = 10 V, ID = 5 A, VGS = 5 V 1.3 nC 1.7 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.5 A (Note 2) 0.85 2.5 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 42oC/W when mounted on a 1 in2 pad of 2oz Cu. b. 95oC/W when mounted on a 2 0.066 in pad of 2oz Cu. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% www.onsemi.com 2 c. 110oC/W when mounted on a 0.00123 in2 pad of 2oz Cu. Typical Electrical Characteristics 10 R DS(ON), NORMALIZED I D , DRAIN-SOURCE CURRENT (A) 6 3.5 4 3.0 2 0 0 0.5 1 1.5 2 2.5 DRAIN-SOURCE ON-RESISTANCE 2.5 VGS = 10V 6.0 5.0 8 4.5 4.0 VGS =3.5V 2 4.0 4.5 1.5 5.0 6.0 7.0 10 1 3 0 2 4 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. VGS = 10V 1.2 1 0.8 -25 0 25 50 75 100 T , JUNCTION TEMPERATURE (°C) 125 150 RDS(ON), DRAIN-SOURCE ON-RESISTANCE R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 5 A 0.6 -50 I D = 2A 0.2 0.15 0.1 TA = 125°C 0.05 TA = 25°C 0 2 4 6 8 10 VGS ,GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. Figure 3. On-Resistance Variation with Temperature. I S , REVERSE DRAIN CURRENT (A) 10 14 TA = -55°C VDS = 10V 12 I D , DRAIN CURRENT (A) 10 0.25 J 25°C 10 125°C 8 6 4 2 0 8 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 1.4 6 I D , DRAIN CURRENT (A) 1 2 3 4 5 6 VGS = 0V 1 TJ = 125°C 0.1 25°C -55°C 0.01 0.001 0.0001 VGS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 0 0.2 0.4 0.6 0.8 1 V SD , BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. www.onsemi.com 3 Typical Electrical Characteristics 1000 I D = 4A VDS = 5V 10V 15V 8 CAPACITANCE (pF) V GS , GATE-SOURCE VOLTAGE (V) 10 6 4 400 Ciss 200 Coss 100 50 0 0 2 4 Q g 6 30 0.1 8 0.1 0.01 0.1 10 30 200 POWER (W) 120 V GS = 10V SINGLE PULSE RθJA = 110°C/W T A A = 25°C 0.2 0.5 V 80 40 1 DS SINGLE PULSE RθJA =110°C TA = 25°C 160 100 ms 1s 10s DC 0.5 0.05 3 Figure 8. Capacitance Characteristics. 100 1m µs s 10m s IT LIM N) (O S RD 1 2 5 10 20 0 0.001 50 0.01 0.1 1 10 100 SINGLE PULSE TIME (SEC) , DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE I D , DRAIN CURRENT (A) 5 1 VDS , DRAIN TO SOURCE VOLTAGE (V) 50 10 0.3 , GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 20 Crss f = 1 MHz VGS = 0 V 2 Figure 10. Single Pulse Maximum Power Dissipation. 1 0.5 D = 0.5 0.2 0.2 0.1 0.05 0.02 0.01 0.005 R θJA (t) = r(t) * R θJA R θJA = 110 °C/W 0.1 0.05 P(pk) 0.02 0.01 t1 Single Pulse 0.002 0.001 0.0001 t2 TJ - TA = P * R JA (t) θ Duty Cycle, D = t 1/ t 2 0.001 0.01 0.1 1 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design. www.onsemi.com 4 10 100 300 300 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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