FDT4N50NZU

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET - Power, N-Channel, UniFETt II, Ultra FRFETt 500 V, 2 A, 3 W FDT4N50NZU www.onsemi.com Description UniFET II MOSFET is ON Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on−state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate−source ESD diode allows UniFET II MOSFET to withstand over 2 kV HBM surge stress. UniFET II Ultra FRFET MOSFET has much superior body diode reverse recovery performance. Its trr is less than 50 nsec and the reverse dv/dt immunity is 20 V/nsec while normal planar MOSFETs have over 200 nsec and 4.5 V/nsec respectively. Therefore UniFET II Ultra FRFET MOSFET can remove additional component and improve system reliability in certain applications that require performance improvement of the MOSFET’s body diode. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. VDSS RDS(ON) MAX ID MAX 500 V 3  @ 10 V 2A D G S POWER MOSFET D Features • • • • Typ. RDS(on) = 2.42  Ultra Low Gate Charge (Typ. Qg = 9.1 nC) 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Computing / Display Power Supplies • Industrial Power Supplies • Consumer Power Supplies G D S SOT−223 (TO−261) CASE 318E MARKING DIAGRAM D AYW 4N50U G A Y W 4N50U D S = Assembly Location = Year = Work Week = Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2019 February, 2021 − Rev. 1 1 Publication Order Number: FDT4N50NZU/D FDT4N50NZU ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter Value Unit 500 V ±25 V − Continuous (TC = 25°C) 2 A − Continuous (TC = 100°C) 1.2 VDSS Drain to Source Voltage VGSS Gate to Source Voltage − DC Drain Current ID IDM Drain Current EAS IAS 6 A Single Pulsed Avalanche Energy (Note 2) 46 mJ Avalanche Current (Note 2) 2 A EAR Repetitive Avalanche Energy (Note 1) 2 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns 2 W 0.02 W/°C −55 to +150 °C 300 °C PD − Pulsed (Note 1) Power Dissipation (TC = 25°C) − Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. NOTE: Drain current limited by maximum junction temperature. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 2 A, RG = 25 , starting TJ = 25°C. 3. ISD ≤ 3 A, di/dt ≤ 100 A/s, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol RJA Parameter Thermal Resistance, Junction to Ambient, (1 in2 Pad of 2 oz. Copper) Max. Value Unit 60 _C/W PACKAGE MARKING AND ORDERING INFORMATION Part Number FDT4N50NZU Top Marking FDT4N50NZU Package Packing Method SOT−223 Tape & Reel† Reel Size Tape Width Quantity 330 mm 12 mm 4000 Units †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 2 FDT4N50NZU ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS Drain to Source Breakdown Voltage VGS = 0 V, ID = 250 A, TJ = 25_C BVDSS / TJ Breakdown Voltage Temperature Coefficient ID = 1 mA, Referenced to 25_C IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V BVDSS 500 0.55 Gate to Body Leakage Current V/_C 1 A ±10 A 5.5 V 3  4.6 VDS = 400 V, TC = 125_C IGSS V VGS = ±25 V, VDS = 0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 250 A RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 1 A 2.42 Forward Transconductance VDS = 20 V, ID = 1 A 1 S gFS 3.5 DYNAMIC CHARACTERISTICS VDS = 25 V, VGS = 0 V, f = 1 MHz Ciss Input Capacitance 476 pF Coss Output Capacitance 43 pF Crss Reverse Transfer Capacitance 2.7 pF 9.1 nC 2.9 nC 3.3 nC 16 ns 16 ns Qg(tot) Total Gate Charge at 10 V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 400 V, ID = 3 A, VGS = 10 V (Note 4) SWITCHING CHARACTERISTICS VDD = 250 V, ID = 3 A, VGS = 10 V, Rg = 25  (Note 4) td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time 34 ns Turn-Off Fall Time 15 ns tf SOURCE-DRAIN DIODE CHARACTERISTICS IS Maximum Continuous Source to Drain Diode Forward Current ISM Maximum Pulsed Source to Drain Diode Forward Current VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 1 A trr Reverse Recovery Time Qrr Reverse Recovery Charge VDD = 400 V, ISD = 3 A, dIF/ dt = 100 A/s 2 A 6 A 1.2 V 24 ns 18 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 FDT4N50NZU TYPICAL CHARACTERISTICS 15 V 7.0 V 10 V 4 6.5 V 8.0 V 2 0 ID, DRAIN CURRENT (A) VGS = 20 V 6.0 V 2 4 6 8 10 12 14 16 18 3.0 2.8 2.6 2.4 2.2 1 3 4 5 1 2 3 4 5 6 10 6 7 8 7 9 TJ = 150°C TJ = 25°C 1 0.1 0.01 0.001 VGS = 0 V 0 0.5 1.0 1.5 2.0 ID, DRAIN CURRENT (A) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 1000 10 Ciss 100 Coss 10 VDD = 250 V VDD = 400 V 6 4 2 f = 1 MHz VGS = 0 V 0.1 VDD = 100 V 8 VGS (V) CAPACITANCE (pF) TJ = 25°C Figure 2. Transfer Characteristics 3.2 1 TJ = 150°C 2 Figure 1. On−Region Characteristics VGS = 10 V TJ = 25°C 0 3 VGS, GATE−TO−SOURCE VOLTAGE (V) 3.4 2.0 4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 3.8 3.6 VDS = 20 V 5 0 20 IS, REVERSE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 6 RDS(ON), DRAIN−TO−SOURCE ON−RESISTANCE 6 250 s Pulse Test TC = 25°C Crss 1 10 ID = 3 A 0 100 0 2 4 6 8 VDS, DRAIN−TO−SOURCE VOLTAGE (V) CHARGE (nC) Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 10 FDT4N50NZU 2.00 1.2 RDS(ON), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE NORMALIZED DRAIN−TO−SOURCE BREAKDOWN VOLTAGE TYPICAL CHARACTERISTICS ID = 250 A VGS = 0 V 1.1 1.0 0.9 0.8 −75 −25 25 75 125 175 1.00 0.75 0.50 0 25 50 75 100 125 150 Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On−Resistance Variation vs. Temperature 1 ms 1 10 ms 0.1 TC = 25°C TJ = 150°C Single Pulse 1 175 2.5 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) ZJA(t), NORMALIZED THERMAL RESPONSE 1.25 TJ, JUNCTION TEMPERATURE (°C) 100 s 100 ms DC 100 10 1000 2.0 1.5 1.0 0.5 0 25 50 75 100 125 150 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TC, CASE TEMPERATURE (°C) Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 10 1 1.50 TJ, AMBIENT TEMPERATURE (°C) Operation in this area 10 is limited by RDS(on) 0.01 ID = 1 A VGS = 10 V 1.75 Duty Cycle = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 1E−03 P DM 1E−04 t1 1E−05 Single Pulse 1E−06 1E−06 1E−05 t2 0.0001 0.001 0.01 0.1 t, SQUARE WAVE PULSE DURATION (sec) Figure 11. Transient Thermal Response www.onsemi.com 5 1 Notes: ZJA(t) = 60°C/W Max. TJM − TC = PDM x ZJC(t) Duty Factor, D = t1/t2 10 100 1000 FDT4N50NZU VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 12. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr td(off) ton tf toff Figure 13. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 Time FDT4N50NZU + DUT VDS − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms Ultra FRFET and UniFET are trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 7 FDT4N50NZU PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R q q www.onsemi.com 8 FDT4N50NZU ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 9 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative