FDT55AN06LA0
N-Channel
PowerTrench®
tm
MOSFET
60V, 11A, 55m:
Features
Applications
• RDS(on) = 44m: ( Typ.)@ VGS = 5V, ID = 11A
• Motor / Body load control
• Qg(tot) = 7.6nC( Typ.),@ VGS = 5V.
• Power train management
• Low Miller Charge
• DC-AC converters
• Low QRR Body Diode
• Distributed power architectures and VRMs
• UIS Capability
• RoHS compliant
D
D
G
S
D
SOT-22 3
G
S
MOSFET Maximum Ratings TC = 25 C unless otherwise noted
o
Symbol
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Parameter
Drain Current
Units
V
±20
V
-Continuous (TC = 25oC, VGS = 10V)
12.1
-Continuous (TC = 25oC, VGS = 5V)
11
-Continuous (TC = 10oC, VGS = 5V)
7
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
Ratings
60
- Pulsed
(TC = 25oC)
- Derate above 25oC
A
(Note 1)
36
A
(Note 2)
34
mJ
8.9
W
0.071
W/oC
-55 to +150
oC
o
300
C
Thermal Characteristics
Symbol
Parameter
Ratings
RTJC
Thermal Resistance, Junction to Case
14
RTJA
Thermal Resistance, Junction to Ambient
100
Units
o
C/W
*When mounted on the minimum pad size recommended (PCB Mount)
©2008 Fairchild Semiconductor Corporation
FDT55AN06LA0 Rev. A
1
www.fairchildsemi.com
FDT55AN06LA0 N-Channel PowerTrench® MOSFET
February 2008
Device Marking
FDT55AN06LA0
Device
FDT55AN06LA0
Package
SOT-223
Reel Size
330mm
Tape Width
12mm
Quantity
4000
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
V
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250PA, VGS = 0V, TJ = 25oC
60
-
-
VDS = 50V, VGS = 0V
-
-
1
PA
IDSS
Zero Gate Voltage Drain Current
VDS = 50V, TC = 150oC
-
-
250
IGSS
Gate to Body Leakage Current
VGS = ±20V, VDS = 0V
-
-
±100
nA
Gate Threshold Voltage
VGS = VDS, ID = 250PA
1.0
-
3.0
V
Static Drain to Source On Resistance
VGS = 10V, ID = 11A
VDS = 5V, ID = 11A
-
36
44
46
55
m:
VDS = 25V, VGS = 0V
f = 1MHz
-
849
1130
pF
-
88
115
pF
-
37
55
pF
On Characteristics
VGS(th)
RDS(on)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
tON
Turn-On Time
-
34
78
ns
td(on)
Turn-On Delay Time
-
10
30
ns
tr
Turn-On Rise Time
-
24
58
ns
td(off)
Turn-Off Delay Time
-
23
56
ns
tf
Turn-Off Fall Time
-
12
34
ns
tOFF
Turn-Off Time
-
35
80
ns
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDD = 30V, ID = 11A
VGS = 5V, RGS = 18:
VDS = 30V, ID = 11A
VGS = 0V to 5V
-
7.6
10
nC
-
2.8
-
nC
-
2.7
-
nC
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
12
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
36
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 11A
-
-
1.25
V
trr
Reverse Recovery Time
-
25
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 11A
dIF/dt = 100A/Ps
-
27
-
nC
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 0.21mH, IAS = 18A, VDD = 50V, RG = 25:, Starting TJ = 25°C
3: ISD d11A, di/dt d200A/Ps, VDD dBVDSS, Starting TJ = 25°C
4: Pulse Test: Pulse width d300Ps, Duty Cycle d2%
5: Essentially Independent of Operating Temperature Typical Characteristics
FDT55AN06LA0 Rev. A
2
www.fairchildsemi.com
FDT55AN06LA0 N-Channel PowerTrench® MOSFET
Package Marking and Ordering Information TC = 25oC unless otherwise noted
Figure 1. On-Region Characteristics
ID,Drain Current[A]
10
Figure 2. Transfer Characteristics
40
VGS = 20 V
15 V
10 V
8V
7V
6V
5V
4V
3V
ID,Drain Current[A]
30
10
1
o
150 C
o
-55 C
o
25 C
*Notes:
1. 250Ps Pulse Test
*Notes:
1. VDS = 20V
2. 250Ps Pulse Test
o
2. TC = 25 C
0.1
0.01
0.1
VDS,Drain-Source Voltage[V]
1
1
2.0
2
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
40
40
IS, Reverse Drain Current [A]
45
VGS = 10V
35
VGS = 20V
30
25
10
o
150 C
o
25 C
1
*Notes:
1. VGS = 0V
o
*Note: TC = 25 C
20
0
10
20
30
ID, Drain Current [A]
0.1
0.0
40
Figure 5. Capacitance Characteristics
0.5
1.0
VSD, Body Diode Forward Voltage [V]
1.5
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
800
Coss
*Note:
1. VGS = 0V
2. f = 1MHz
400
Crss
VGS, Gate-Source Voltage [V]
10
1200
600
2. 250Ps Pulse Test
Figure 6. Gate Charge Characteristics
1400
Capacitances [pF]
4.0
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
50
RDS(ON) [m:],
Drain-Source On-Resistance
2.5
3.0
3.5
VGS,Gate-Source Voltage[V]
VDS = 12V
VDS = 30V
VDS = 48V
8
6
4
2
200
0
0.1
FDT55AN06LA0 Rev. A
1
10
VDS, Drain-Source Voltage [V]
*Note: ID = 11A
0
30
0
3
2
4
6
8
Qg, Total Gate Charge [nC]
10
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FDT55AN06LA0 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
2.5
RDS(on), [Normalized]
Drain-Source On-Resistance
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.1
1.0
0.9
*Notes:
1. VGS = 0V
2. ID = 250PA
0.8
-100
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
2.0
1.5
1.0
0.5
*Notes:
1. VGS = 10V
2. ID = 11A
0.0
-100
200
Figure 9. Maximum Safe Operating Area
-50
0
50
100
150
o
TJ, Junction Temperature [ C]
200
Figure 10. Maximum Drain Current
vs. Case Temperature
100
12
10
100Ps
10
ID, Drain Current [A]
ID, Drain Current [A]
20Ps
1ms
10ms
1
Operation in This Area
is Limited by R DS(on)
DC
*Notes:
0.1
8
6
4
o
1. TC = 25 C
2
o
2. TJ = 150 C
3. Single Pulse
0.01
1
10
VDS, Drain-Source Voltage [V]
0
25
100
50
75
100
125
o
TC, Case Temperature [ C]
150
Figure 11. Transient Thermal Response Curve
Thermal Response [ZTJC]
30
10
0.5
0.2
1
0.1
t1
0.02
t2
0.01
*Notes:
0.1
o
1. ZTJC(t) = 14 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZTJC(t)
Single pulse
0.01
-5
10
FDT55AN06LA0 Rev. A
PDM
0.05
-4
10
-3
10
-2
-1
0
1
10
10
10
10
Rectangular Pulse Duration [sec]
4
2
10
3
10
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FDT55AN06LA0 N-Channel PowerTrench® MOSFET
Typical Performance Characteristics (Continued)
FDT55AN06LA0 N-Channel PowerTrench® MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDT55AN06LA0 Rev. A
5
www.fairchildsemi.com
FDT55AN06LA0 N-Channel PowerTrench® MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
V
DS
_
I
SD
L
D r iv e r
R
V
V GS
( D r iv e r )
G S
G
S am e T ype
as DUT
V
DD
• d v / d t c o n t r o lle d b y R G
• I S D c o n t r o lle d b y p u ls e p e r io d
G a t e P u ls e W id th
D = -------------------------G a te P u ls e P e r io d
10V
I F M , B o d y D io d e F o r w a r d C u r r e n t
I SD
( DUT )
d i/ d t
IR M
B o d y D io d e R e v e r s e C u r r e n t
V DS
( DUT )
B o d y D io d e R e c o v e r y d v / d t
V
V
SD
DD
B o d y D io d e
F o r w a r d V o lt a g e D r o p
FDT55AN06LA0 Rev. A
6
www.fairchildsemi.com
3.00 r0.10
4.60 r0.25
6.50 r0.20
FDT55AN06LA0 Rev. A
(0.89)
(0.95)
(0.46)
1.60 r0.20
2.30 TYP
0.70 r0.10
(0.95)
7
10
0.25
+0.10
–0.05
0q~
7.00 r0.30
(0.60)
+0.04
0.06 –0.02
(0.60)
3.50 r0.20
1.75 r0.20
MAX1.80
0.65 r0.20
0.08MAX
SOT-223
q
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FDT55AN06LA0 N-Channel PowerTrench® MOSFET
Mechanical Dimensions
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subsidianries, and is not intended to be an exhaustive list of all such trademarks.
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Build it Now™
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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT NOTICE TO ANY PRODUCTS HEREIN TO
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APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS
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2.
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properly used in accordance with instructions for use provided
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or In Design
This datasheet contains the design specifications for product development.
Specifications may change in any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve design.
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the right to make changes at any time without notice to improve design.
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Rev. I33
FDT55AN06LA0 Rev. A
8
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FDT55AN06LA0 N-Channel PowerTrench® MOSFET
TRADEMARKS
