FDT86246

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDT86246 N-Channel Power Trench® MOSFET 150 V, 2 A, 236 mΩ Features General Description „ Max rDS(on) = 236 mΩ at VGS = 10 V, ID = 2 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been optimized for rDS(on), switching performance and ruggedness. „ Max rDS(on) = 329 mΩ at VGS = 6 V, ID = 1.7 A „ High performance trench technology for extremely low rDS(on) „ High power and current handling capability in a widely used surface mount package Applications „ Fast switching speed „ Load Switch „ 100% UIL Tested „ Primary Switch „ RoHS Compliant D D S D SOT-223 G G D S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID (Note 1a) -Pulsed PD TJ, TSTG Units V ±20 V 2 8 Single Pulse Avalanche Energy EAS Ratings 150 (Note 3) 8 Power Dissipation (Note 1a) 2.2 Power Dissipation (Note 1b) 1.0 Operating and Storage Junction Temperature Range -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient (Note 1) 12 (Note 1a) 55 °C/W Package Marking and Ordering Information Device Marking 86246 Device FDT86246 ©2010 Fairchild Semiconductor Corporation FDT86246 Rev.C Package SOT-223 1 Reel Size 13 ’’ Tape Width 12 mm Quantity 2500 units www.fairchildsemi.com FDT86246 N-Channel Power Trench® MOSFET December 2010 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 120 V, VGS = 0 V 1 μA IGSS Gate to Source Leakage Current VGS = ±20 V, VDS = 0 V ±100 nA 4.0 V 150 V 104 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 250 μA, referenced to 25 °C VGS = 10 V, ID = 2 A 194 rDS(on) Static Drain to Source On Resistance VGS = 6 V, ID = 1.7 A 231 329 VGS = 10 V, ID = 2 A, TJ = 125 °C 349 425 gFS Forward Transconductance 2.0 VDS = 10 V, ID = 2 A 3.1 -9 mV/°C 236 5 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 75 V, VGS = 0 V, f = 1 MHz 161 215 pF 21 30 pF 1.6 5 pF Ω 0.9 Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg(TOT) 7.8 16 2.3 10 ns 4.6 10 ns 1.2 10 ns 2.9 4 nC VDD = 75 V, ID = 2 A, VGS = 10 V, RGEN = 6 Ω Total Gate Charge VGS = 0 V to 10 V Qg(TOT) Total Gate Charge VGS = 0 V to 5 V 1.7 3 Qgs Total Gate Charge Qgd Gate to Drain “Miller” Charge VDD = 75 V, ID = 2 A ns 0.9 nC 0.8 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A IF = 2 A, di/dt = 100 A/μs (Note 2) 0.84 1.3 V 44 71 ns 31 49 nC NOTES: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 55 °C/W when mounted on a 1 in2 pad of 2 oz copper b) 118 °C/W when mounted on a minimum pad of 2 oz copper 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; N-ch: L = 1.0 mH, IAS = 4.0 A, VDD = 135 V, VGS = 10 V. ©2010 Fairchild Semiconductor Corporation FDT86246 Rev.C 2 www.fairchildsemi.com FDT86246 N-Channel Power Trench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 8 6 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = 7 V ID, DRAIN CURRENT (A) 3.0 VGS = 10 V VGS = 6 V VGS = 5.5 V 4 VGS = 5 V 2 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 4 VGS = 5 V 2.5 VGS = 5.5 V 2.0 VGS = 6 V 1.5 1.0 0.5 5 0 2 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.6 1.2 0.8 SOURCE ON-RESISTANCE (mΩ) 2.0 ID = 2 A PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 600 TJ = 125 oC 400 200 TJ = 25 oC 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On-Resistance vs Junction Temperature Figure 4. On-Resistance vs Gate to Source Voltage 8 10 IS, REVERSE DRAIN CURRENT (A) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 8 800 ID = 2 A VGS = 10 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 6 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 2.4 -50 4 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 0.4 -75 VGS = 10 V VGS = 7 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 6 VDS = 5 V TJ = 150 oC 4 TJ = 25 oC 2 TJ = -55 oC 0 2 3 4 5 6 1 TJ = 150 oC TJ = 25 oC 0.1 0.01 TJ = -55 oC 0.001 0.0 7 VGS, GATE TO SOURCE VOLTAGE (V) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDT86246 Rev.C VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDT86246 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 500 ID = 2 A Ciss VDD = 50 V 8 VDD = 75 V 6 100 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 100 V 4 Coss 10 Crss 2 f = 1 MHz VGS = 0 V 0 0.0 0.5 1.0 1.5 2.0 2.5 1 0.1 3.0 1 Figure 7. Gate Charge Characteristics 100 Figure 8. Capacitance vs Drain to Source Voltage 5 5 ID, DRAIN CURRENT (A) 7 6 IAS, AVALANCHE CURRENT (A) 10 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) TJ = 25 oC 4 3 TJ = 100 oC 2 TJ = 125 oC 4 VGS = 10 V 3 VGS = 6 V 2 1 o RθJC = 12 C/W 1 0.001 0.01 0.1 0 25 1 50 150 300 P(PK), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 125 Figure 10. Maximum Continuous Drain Current vs Case Temperature 10 100 μs 1 1 ms THIS AREA IS LIMITED BY rDS(on) 10 ms 100 ms SINGLE PULSE TJ = MAX RATED 1s RθJA = 118 oC/W 0.01 100 o Figure 9. Unclamped Inductive Switching Capability 0.1 75 TC, CASE TEMPERATURE ( C) tAV, TIME IN AVALANCHE (ms) 10 s TA = 25 oC 0.005 0.1 DC 1 10 100 500 100 TA = 25 oC 10 1 0.5 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDT86246 Rev.C SINGLE PULSE RθJA = 118 oC/W Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDT86246 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 DUTY CYCLE-DESCENDING ORDER NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 118 C/W 0.01 0.005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDT86246 Rev.C 5 www.fairchildsemi.com FDT86246 N-Channel Power Trench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 6.70 6.20 0.10 B C B 3.10 2.90 3.25 4 1.90 A 3.70 3.30 1 6.10 1.90 3 0.84 0.60 2.30 2.30 0.95 4.60 0.10 C B LAND PATTERN RECOMMENDATION SEE DETAIL A 1.80 MAX C 0.08 C 0.10 0.00 10° 5° GAGE PLANE R0.15±0.05 R0.15±0.05 10° TYP 0° 0.25 SEATING PLANE 10° 5° 0.60 MIN 1.70 DETAIL A SCALE: 2:1 0.35 0.20 7.30 6.70 NOTES: UNLESS OTHERWISE SPECIFIED A) DRAWING BASED ON JEDEC REGISTRATION TO-261C, VARIATION AA. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-2009. E) LANDPATTERN NAME: SOT230P700X180-4BN F) DRAWING FILENAME: MKT-MA04AREV3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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