FDU5N50NZTU

FDU5N50NZTU Power MOSFET, N-Channel, UniFETt II 500 V, 4 A, 1.5 W UniFET II MOSFET is ON Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on−state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate−source ESD diode allows UniFET II MOSFET to withstand over 2 kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. Features • • • • • • • www.onsemi.com D G S RDS(on) = 1.38  (Typ.) @ VGS = 10 V, ID = 2 A Low Gate Charge (Typ. 9 nC) Low Crss (Typ. 4 pF) 100% Avalanche Tested Improved dv/dt Capability ESD Improved Capability These Devices are Pb−Free and are RoHS Compliant Applications IPAK3 CASE 369AR • LCD / LED TV • Lighting • Charger / Adapter ORDERING INFORMATION See detailed ordering, marking and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2018 May, 2019 − Rev. 1 1 Publication Order Number: FDU5N50NZTU/D FDU5N50NZTU MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Symbol Parameter VDSS Drain−to−Source Voltage VGSS Gate−to−Source Voltage ID Drain Current Value Unit 500 V ±25 V Continuous (TC = 25°C) 4 A Continuous (TC = 100°C) 2.4 Pulsed (Note 1) 16 A 304 mJ 4 A IDM Drain Current EAS Single Pulse Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) EAR Repetitive Avalanche Energy (Note 1) 6.2 mJ dv/dt Peak Diode Recovery (Note 3) 10 V/ns TC = 25°C 62 W Derate Above 25°C 0.5 W/°C −55 to +150 °C 300 °C PD TJ, TSTG TL Power Dissipation Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes (1/8″ from case for 5 seconds) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. IAS = 4 A, VDD = 50 V, L = 38 mH, RG = 25 , starting TJ = 25°C. 3. ISD ≤ 4 A, di/dt ≤ 200 A/s, VDD ≤ BVDSS, Starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Value Unit RJC Thermal Resistance, Junction−to−Case Parameter 2.0 °C/W RJA Thermal Resistance, Junction−to−Ambient 90 PACKAGE MARKING AND ORDERING INFORMATION Part Number FDU5N50NZTU Top Mark Package Packing Method Reel Size Tape Width Quantity FDU5N50NZ IPAK Tube N/A N/A 75 units www.onsemi.com 2 FDU5N50NZTU ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) Symbol Parameter Test Condition Min Typ Max Drain−to−Source Breakdown Voltage ID = 250 A, VGS = 0 V, TJ = 25°C 500 BVDSS/TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25°C IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V 1 VDS = 400 V, TC = 125°C 10 VGS = ±25 V, VDS = 0 V ±10 Unit OFF CHARACTERISTICS BVDSS IGSS Gate−to−Body Leakage Current V 0.5 V/°C A A ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(on) Static Drain−to−Source On Resistance VGS = 10 V, ID = 2 A 1.38 Forward Transconductance VDS = 20 V, ID = 2 A 3.54 VDS = 25 V, VGS = 0 V, f = 1 MHz 330 440 50 70 gFS VGS = VDS, ID = 250 A 3.0 5.0 V 1.5  S DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) VDS = 400 V, ID = 4 A, VGS = 10 V (Note 4) Total Gate Charge at 10 V Qgs Gate−to−Source Gate Charge Qgd Gate−to−Drain “Miller” Charge pF 4 6 9 12 nC 12 35 ns 2 4 SWITCHING CHARACTERISTICS VDD = 250 V, ID = 4 A, VGS = 10 V, RG = 25  (Note 4) td(on) Turn−On Delay Time tr Turn−On Rise Time 22 55 td(off) Turn−Off Delay Time 28 65 Turn−Off Fall Time 21 50 tf DRAIN−SOURCE DIODE CHARACTERISTICS Maximum Continuous Drain to Source Diode Forward Current 4 ISM Maximum Pulsed Drain to Source Diode Forward Current 16 VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 4 A 1.4 trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, ISD = 4 A, dIF/dt = 100 A/s IS A V 210 ns 1.1 C Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of Operating Temperature Typical Characteristics. www.onsemi.com 3 FDU5N50NZTU TYPICAL CHARACTERISTICS Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 4 FDU5N50NZTU TYPICAL CHARACTERISTICS Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On−Resistance Variation vs. Temperature Figure 9. Maximum Safe Operating Area vs. Case Temperature Figure 10. Maximum Drain Current P DM t1 Figure 11. Transient Thermal Response Curve www.onsemi.com 5 t2 FDU5N50NZTU Figure 12. Gate Charge Test Circuit & Waveform Figure 13. Resistive Switching Test Circuit & Waveforms Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 FDU5N50NZTU Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms UniFET is a trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 7 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK3 (IPAK) CASE 369AR ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13815G DPAK3 (IPAK) DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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