FDU6676AS

FDU6676AS tm N-Channel PowerTrench® SyncFET™ 30V, 90A, 5.8mΩ General Description Features The FDU6676AS is designed to replace a single MOSFET and Schottky diode in synchronous DC/DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDU6676AS includes a patented combination of a MOSFET monolithically integrated with a Schottky diode using Fairchild’s monolithic SyncFET technology. • RDS(ON) = 5.8mΩ Max, VGS = 10V • RDS(ON) = 7.3mΩ Max, VGS = 4.5V • High performance trench technology for extremely low RDS(ON) • Low Gate Charge Applications • High power and current handling capability • DC/DC converter • Includes SyncFET Schottky diode D G I-PAK (TO-251AA) S G D S Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Ratings Units VDSS Drain-Source Voltage 30 V VGSS ID Gate-Source Voltage Drain Current ±20 V A PD –Pulsed Power Dissipation for Single Operation TJ, TSTG Parameter –Continuous (Note 1a) 90 100 (Note 1) 70 (Note 1a) 3.1 (Note 1b) 1.3 Operating and Storage Junction Temperature Range W –55 to +150 °C °C/W Thermal Characteristics Thermal Resistance junction to Case RθJC RθJA (Note 1) 1.8 Thermal Resistance junction to Ambient (Note 1a) 45 RθJA Thermal Resistance junction to Ambient (Note 1b) 96 Package Marking and Ordering Information Device Marking FDU6676AS FDU6676AS Device FDU6676AS FDU6676AS_F071 (Note 4) ©2008 Fairchild Semiconductor Corporation Package I-PAK (TO-251) I-PAK (TO-251)���� Reel Size Tube Tube Tape width N/A N/A Quantity 75 75 FDU6676AS Rev. A1 (W) FDU6676AS April 2008 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Single Pulse, VDD = 15V,ID = 16A 108 250 mJ 16 A Drain-Source Avalanche Ratings (Note 2) WDSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage On Characteristics VGS = 0 V, ID = 250 µA 30 V ID = 250 µA,Referenced to 25°C 29 VDS = 24 V, VGS = 0 V VDS = 24 V, VGS = 0 V, TJ=125°C VGS = ±20 V, VDS = 0 V 13 mV/°C 500 ±100 µA mA nA (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient ID = 250 µA VDS = VGS, ID = 250 µA,Referenced to 25°C Static Drain–Source On–Resistance gFS Forward Transconductance VGS = 10 V, ID = 16 A VGS = 4.5 V, ID = 10 A VGS = 10 V, ID = 16 A,TJ=125°C VDS = 10 V, ID = 16 A 1 1.5 –4 3 V mV/°C 4.8 5.8 7.7 5.8 7.3 9.6 mΩ 67 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss RG Reverse Transfer Capacitance Gate Resistance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time VDS = 15 V, f = 1.0 MHz V GS = 0 V, 2470 pF 710 pF 260 pF VGS = 100 mV, f = 1.0 MHz 1.8 Ω 12 22 ns VDD = 15 V, VGS = 10 V, 12 22 ns (Note 2) ID = 1 A, RGEN = 6 Ω td(off) Turn–Off Delay Time 50 80 ns tf Turn–Off Fall Time 25 40 ns td(on) Turn–On Delay Time 20 32 ns tr Turn–On Rise Time 24 38 ns td(off) Turn–Off Delay Time 34 54 ns tf Turn–Off Fall Time 26 42 ns VDD = 15 V, VGS = 4.5 V, ID = 1 A, RGEN = 6 Ω Qg Total Gate Charge, VGS = 10V 46 64 nC Qg Total Gate Charge, VGS = 5V 25 35 nC Qgs Gate–Source Charge 6 nC Qgd Gate–Drain Charge 7 nC VDS = 15V, ID = 16 A FDU6676AS Rev A1 (W) FDU6676AS Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Drain–Source Diode Characteristics and Maximum Ratings IS 0.4 trr Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward (Note 2) VGS = 0 V, IS = 2.3 A Voltage = 16 A, dI /dt = 100 A/µs I F F Diode Reverse Recovery Time 28 ns Qrr Diode Reverse Recovery Charge 19 nC VSD 2.3 A 1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) RθJA = 45°C/W when mounted on a 1in2 pad of 2 oz copper b) RθJA = 96°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% 3. Maximum current is calculated as: PD R DS(ON) where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A 4. FDU6676AS_F071 is a lead free product. The FDU6676AS_F071 marking will appear on the reel label. 5 FDU6676AS Rev A1 (W) FDU6676AS Electrical Characteristics FDU6676AS Typical Characteristics 100 2 VGS = 10V 3.5V VGS = 3.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) 6.0V 4.0V 80 4.5V 60 3.0V 40 20 2.5V 0 0.5 1 1.5 2 VDS, DRAIN-SOURCE VOLTAGE (V) 3.5V 1.4 4.0V 4.5V 1.2 6.0V 10V 1 2.5 0 Figure 1. On-Region Characteristics 20 40 60 ID, DRAIN CURRENT (A) 80 100 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.0175 1.6 ID = 16A VGS = 10V ID = 8A RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 0.8 0 1.4 1.2 1 0.8 0.015 0.0125 o 0.01 TA = 125 C 0.0075 o TA = 25 C 0.005 0.0025 0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 2 150 Figure 3. On-Resistance Variation with Temperature 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 100 VGS = 0V IS, REVERSE DRAIN CURRENT (A) VDS = 5V 80 ID, DRAIN CURRENT (A) 1.8 60 o 40 TA =125 C -55oC 20 10 1 o TA = 125 C 0.1 25oC 0.01 o -55 C 0.001 25oC 0.0001 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics 4 0 0.2 0.4 0.6 0.8 VSD, BODY DIODE FORWARD VOLTAGE (V) 1 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDU6676AS Rev A1 (W) 3500 ID = 16A f = 1MHz VGS = 0 V 3000 8 VDS = 10V 2500 CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 Ciss 2000 15V 1500 4 Coss 1000 2 500 Crss 0 0 0 10 20 30 Qg, GATE CHARGE (nC) 40 0 50 Figure 7. Gate Charge Characteristics 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 8. Capacitance Characteristics 100 100 P(pk), PEAK TRANSIENT POWER (W) 1000 100µs RDS(ON) LIMIT 1m 10ms 10 100ms 1s 10s 1 DC VGS = 10V SINGLE PULSE RθJA = 96oC/W 0.1 o TA = 25 C 0.01 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 60 40 20 0 0.01 100 SINGLE PULSE RθJA = 96°C/W TA = 25°C 80 Figure 9. Maximum Safe Operating Area r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE ID, DRAIN CURRENT (A) 5 0.1 1 10 t1, TIME (sec) 100 1000 Figure 10. Single Pulse Maximum Power Dissipation 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 96 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 t1 0.01 t2 0.01 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDU6676AS Rev A1 (W) FDU6676AS Typical Characteristics FDU6676AS Typical Characteristics (continued) SyncFET Schottky Body Diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. IDSS, REVERSE LEAKAGE CURRENT (A) CURRENT : 0.8A/div Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDU6676AS. 0.1 125oC 0.01 100oC 0.001 0.0001 25oC 0.00001 0 10 20 VDS, REVERSE VOLTAGE (V) 30 Figure 14. SyncFET Body Diode Reverse Leakage Versus Drain-Source Voltage and Temperature. TIME : 12.5ns/div Figure 12. FDU6676AS SyncFET Body Diode Reverse Recovery Characteristic. CURRENT : 0.8A/div For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDU6676A). TIME : 12.5ns/div Figure 13. Non-SyncFET (FDU6676A) Body Biode Reverse Recovery Characteristic. FDU6676AS Rev A1 (W) The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. 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Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I34 FDU6676AS Rev A1 (W) FDU6676AS TRADEMARKS