FDD6688/FDU6688
30V N-Channel PowerTrench MOSFET
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low RDS( ON) and fast switching speed.
• 84 A, 30 V.
RDS(ON) = 5 mΩ @ VGS = 10 V
RDS(ON) = 6 mΩ @ VGS = 4.5 V
• Low gate charge
• Fast switching
Applications
• High performance trench technology for extremely
low RDS(ON)
• DC/DC converter
• Motor Drives
D
D
G
S
D-PAK
TO-252
(TO-252)
I-PAK
(TO-251AA)
G D S
Absolute Maximum Ratings
Symbo
l
G
S
TA=25oC unless otherwise noted
Parameter
Ratings
Units
V
VDSS
Drain-Source Voltage
30
VGSS
Gate-Source Voltage
±20
ID
Drain Current
– Continuous
– Pulsed
PD
Power Dissipation for Single Operation
(Note 3)
84
(Note 1a)
100
(Note 1)
83
(Note 1a)
3.8
W
1.6
(Note 1b)
TJ, TSTG
A
–55 to +175
°C
(Note 1)
1.8
°C/W
(Note 1a)
40
(Note 1b)
96
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJC
Thermal Resistance, Junction-to-Case
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Package
Reel Size
Tape width
Quantity
FDD6688
FDD6688
D-PAK (TO-252)
13’’
16mm
2500 units
FDU6688
FDU6688
I-PAK (TO-251)
Tube
N/A
75
2004 Fairchild Semiconductor Corporation
FDD6688/FDU6688 Rev. 6.1
FDD6688/FDU6688
March 2015
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy
IAR
Drain-Source Avalanche Current
Single Pulse, VDD = 15 V, ID = 21A
370
mJ
21
A
Off Characteristics
ID = 250 µA
VGS = 0 V,
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown
Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VDS = 24 V,
VGS = 0 V
1
µA
IGSS
Gate–Body Leakage
VGS = ±20 V,
VDS = 0 V
±100
nA
BVDSS
On Characteristics
ID = 250 µA, Referenced to 25°C
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
Static Drain–Source
On–Resistance
VGS = 10 V,
ID = 18 A
VGS = 4.5 V,
ID = 16.5 A
VGS = 10 V, ID = 18 A, TJ=125°C
ID(on)
On–State Drain Current
VGS = 10 V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 5 V,
ID = 18 A
VDS = 15 V,
f = 1.0 MHz
V GS = 0 V,
∆VGS(th)
∆TJ
RDS(on)
V
24
mV/°C
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
VGS(th)
30
1
1.8
–5
3
4
5
6
5
6
10
V
mV/°C
50
mΩ
A
88
S
3845
pF
930
pF
368
pF
Ω
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VGS = 15 mV,
f = 1.0 MHz
1.2
VDD = 15 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6 Ω
15
27
ns
13
23
ns
62
99
ns
36
58
ns
37
56
nC
(Note 2)
VDS = 15V,
VGS = 5 V
ID = 18 A,
10
nC
14
nC
FDD6688/FDU6688 Rev. 6.1
FDD6688/FDU6688
Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain–Source Diode Characteristics and Maximum Ratings
VSD
trr
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
VGS = 0 V,
IS = 3.2 A
(Note 2)
0.7
IF = 18 A ,diF/dt = 100 A/µs
1.2
V
39
nS
31
nC
Notes:8
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA = 40°C/W when mounted on a
1in2 pad of 2 oz copper
b) RθJA = 96°C/W when mounted
on a minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. Maximum current is calculated as:
PD
R DS(ON)
where PD is maximum power dissipation at TC = 25°C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A
FDD6688/FDU6688 Rev. 6.1
FDD6688/FDU6688
Electrical Characteristics (continued)
FDD6688/FDU6688
Typical Characteristics
4.0V
4.5V
80
ID, DRAIN CURRENT (A)
1.8
VGS = 10V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
100
3.5V
60
40
3.0V
20
VGS = 3.5V
1.6
1.4
4.0V
4.5V
1.2
5.0V
6.0V
10V
1
0.8
0
0
0.5
1
1.5
2
0
2.5
20
40
Figure 1. On-Region Characteristics.
100
0.012
ID =18A
VGS = 10V
1.6
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
80
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.8
1.4
1.2
1
0.8
ID = 9 A
0.01
0.008
TA = 125oC
0.006
TA = 25oC
0.004
0.002
0.6
-50
-25
0
25
50
75
100
125
150
2
175
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
o
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
IS, REVERSE DRAIN CURRENT (A)
80
VDS = 5V
ID, DRAIN CURRENT (A)
60
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
60
40
TA = 125oC
20
25oC
-55oC
0
VGS = 0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
1.5
2
2.5
3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics
3.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
FDD6688/FDU6688 Rev. 6.1
FDD6688/FDU6688
Typical Characteristics
10
5000
VDS = 10V
VGS, GATE-SOURCE VOLTAGE (V)
ID =18A
15V
f = 1MHz
VGS = 0 V
20V
4000
CAPACITANCE (pF)
8
6
4
CISS
3000
2000
COSS
2
1000
0
0
CRSS
0
20
40
60
0
80
5
Figure 7. Gate Charge Characteristics
20
25
P(pk), PEAK TRANSIENT POWER (W)
100
100µs
100
RDS(ON) LIMIT
1ms
10ms
10
100ms
1s
10s
1
VGS = 10V
SINGLE PULSE
RθJA = 96oC/W
0.1
DC
TC = 25oC
0.01
0.01
0.1
1
30
10
SINGLE PULSE
RθJA = 96°C/W
TC = 25°C
80
60
40
20
0
0.01
100
0.1
1
10
100
1000
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
15
Figure 8. Capacitance Characteristics
1000
ID, DRAIN CURRENT (A)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 10. Single Pulse Maximum
Power Dissipation
1
D = 0.5
RθJAt) = r(t) * RθJA
RθJA = 96 °C/W
0.2
0.1
0.1
0.05
0.01
0.001
0.0001
0.0001
P(pk)
0.02
0.01
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDD6688/FDU6688 Rev. 6.1
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Datasheet contains the design specifications for product development. Specifications may change
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Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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Rev. I75
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