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N-Channel UniFETTM MOSFET
500 V, 6 A, 900 mΩ
Features
Description
UniFETTM MOSFET is ON Semiconductor’s high voltage
MOSFET family based on planar stripe and DMOS technology.
This MOSFET is tailored to reduce on-state resistance, and to
provide better switching performance and higher avalanche
energy strength. This device family is suitable for switching
power converter applications such as power factor correction
(PFC), flat panel display (FPD) TV power, ATX and electronic
lamp ballasts.
• RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A
• Low Gate Charge (Typ. 12.8 nC)
• Low Crss (Typ. 9 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
Applications
• LCD/LED/PDP TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
D
D
G
S
D-PAK
Absolute Maximum Ratings
Symbol
G
I-PAK
D
G
S
S
TC = 25oC unless otherwise noted.
Parameter
VDSS
Drain-Source Voltage
ID
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
FDD6N50TM /
FDD6N50TM-WS /
FDU6N50TU
Unit
500
V
6
3.8
A
A
IDM
Drain Current
VGSS
Gate-Source voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
6
A
EAR
Repetitive Avalanche Energy
(Note 1)
8.9
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
PD
Power Dissipation
89
0.71
W
W/°C
-55 to +150
°C
300
°C
FDD6N50TM /
FDD6N50TM-WS /
FDU6N50TU
Unit
(TC = 25°C)
- Derate Above 25°C
TJ, TSTG
Operating and Storage Temperature Range
TL
Maximum Lead Temperature for Soldering, 1/8” from Case for
5 Seconds
(Note 1)
24
A
±30
V
270
mJ
Thermal Characteristics
Symbol
Parameter
RθJC
Thermal Resistance, Junction-to-Case, Max.
1.4
RθJA
Thermal Resistance, Junction-to-Ambient, Max.
83
©2006 Semiconductor Components Industries, LLC.
October-2017,Rev. 3
°C/W
Publication Order Number:
FDU6N50/D
FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET
FDD6N50 / FDU6N50
Part Number
FDD6N50TM
Top Mark
FDD6N50
Package
DPAK
Packing Method
Tape and Reel
Reel Size
330 mm
Tape Width
16 mm
Quantity
2500 units
FDD6N50TM-WS
FDD6N50S
DPAK
Tape and Reel
330 mm
16 mm
2500 units
FDU6N50TU
FDU6N50
IPAK
Tube
N/A
N/A
75 units
Electrical Characteristics
Symbol
TC = 25°C unless otherwise noted.
Parameter
Conditions
Min.
Typ.
Max
Unit
500
--
--
V
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
--
0.5
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
---
---
1
10
µA
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
--
-100
nA
3.0
--
5.0
V
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 3 A
--
0.76
0.9
Ω
gFS
Forward Transconductance
VDS = 40 V, ID = 3 A
--
2.5
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
720
940
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
--
95
190
pF
--
9
13.5
pF
--
6
20
ns
--
55
120
ns
--
25
60
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 250 V, ID = 6 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
VDS = 400 V, ID = 6 A,
VGS = 10 V
(Note 4)
--
35
80
ns
--
12.8
16.6
nC
--
3.7
--
nC
--
5.8
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
6
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
24
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 6 A
--
--
1.4
V
trr
Reverse Recovery Time
--
275
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 6 A,
dIF/dt =100 A/µs
--
1.7
--
µC
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 6 A, VDD = 50 V, L=13.5 mH, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 6 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
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2
FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
Top :
ID, Drain Current [A]
15
Bottom :
VGS
10.0 V
8.0V
7.5 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
1
10
ID , Drain Current [A]
20
Figure 2. Transfer Characteristics
10
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
5
0
0
10
20
30
40
150℃
0
10
25℃
-55℃
-1
10
※ Note
1. VDS = 40V
2. 250μ s Pulse Test
50
VDS, Drain-Source Voltage [V]
-2
10
2
8
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
2.5
IDR , Reverse Drain Current [A]
RDS(ON) [Ω ],Drain-Source On-Resistance
6
VGS , Gate-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
2.0
VGS = 10V
1.5
VGS = 20V
1.0
0.5
1
10
0
10
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
※ Note : TJ = 25℃
0.0
-1
0
5
10
15
10
20
0.2
Figure 5. Capacitance Characteristics
Coss
Crss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
10
0
10
0.8
1.0
1.2
1.4
1.6
1.8
12
1
10
VDS = 100V
VGS, Gate-Source Voltage [V]
Ciss
100
0.6
Figure 6. Gate Charge Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
1000
0.4
VSD , Source-Drain Voltage [V]
ID, Drain Current [A]
Capacitance [pF]
4
VDS = 250V
10
VDS = 400V
8
6
4
2
※ Note : ID = 6A
0
0
5
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
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3
15
FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
3.0
RDS(ON), (Normalized)
Drain-Source On-Resistance
BVDSS, (Normalized)
Drain-Source Breakdown Voltage
1.2
1.1
1.0
♦ Notes :
0.9
1. VGS = 0 V
2. ID = 250 µA
0.8
-100
-50
0
50
100
150
2.5
2.0
1.5
1.0
♦ Notes :
0.5
1. VGS = 10 V
2. ID = 3 A
0.0
-100
200
-50
0
o
TJ, Junction Temperature [ C]
2
100
150
200
o
Figure 9. Maximum Safe Operating Area
10
50
TJ, Junction Temperature [ C]
Figure 10. Maximum Drain Current
vs. Case Temperature
8
Operation in This Area
is Limited by R DS(on)
ID, Drain Current [A]
1 ms
10 ms
DC
0
10
※ Notes :
-1
10
o
1. TC = 25 C
6
4
2
o
2. TJ = 150 C
3. Single Pulse
-2
10
0
10
1
2
10
0
25
3
10
10
50
75
VDS, Drain-Source Voltage [V]
100
TC, Case Temperature [℃]
Figure 11. Transient Thermal Response Curve
ZθJC(t), Thermal Response [oC/W]
Zθ JC(t), Thermal Response
ID, Drain Current [A]
10 us
100 us
1
10
10
0
D = 0 .5
0 .2
※ N o te s :
1 . Z θ J C(t) = 1 .4 ℃ /W M a x.
2 . D u ty F a c to r, D = t 1 /t 2
3 . T JM - T C = P D M * Z θ J C(t)
0 .1
10
-1
0 .0 5
PDM
0 .0 2
t1
0 .0 1
t2
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]
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4
10
0
10
1
125
150
FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET
Typical Performance Characteristics (Continued)
FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET
50KΩ
200nF
12V
VGS
Same Type
as DUT
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 12. Gate Charge Test Circuit & Waveform
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
t off
tf
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
DUT
ID (t)
VDS (t)
VDD
tp
tp
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
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5
Time
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
I SD
( DUT )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
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6
FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET
DUT
FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET
Mechanical Dimensions
Figure 16. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
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7
FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET
Mechanical Dimensions
Figure 17. TO-251 (I-PAK), Molded, 3-Lead, Option AA
Package drawings are provided as a service to customers considering ON Semiconductor components. Drawings may change in
any manner without notice. Please note the revision and/or date on the drawing and contact a ON Semiconductor representative to
verify or obtain the most recent revision. Package specifications do not expand the terms of ON Semiconductor’s worldwide terms and
conditions, specif-ically the warranty therein, which covers ON Semiconductor products.
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8
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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