FDV045P20L

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDV045P20L P-Channel PowerTrench® MOSFET -20 V, -1.15 A, 108 mΩ Features General Description „ Max rDS(on) = 108 mΩ at VGS = -4.5 V, ID = -1.15 A „ Max rDS(on) = 121 mΩ at VGS = -2.5 V, ID = -0.7 A „ Very low rDS(on) Mid Voltage P-channel Silicon Technology Optimised for Low Qg „ This product is optimised for fast switching applications as well as load switch applications „ 100% UIL Tested This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been optimized for the on-state resistance and yet maintain superior switching performance. Applications „ Active Clamp Switch „ Load Switch „ RoHS Compliant SOT-23 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage ID PD TJ, TSTG Units V ±8 V -Continuous (Note 1a) -1.15 -Pulsed (Note 4) -33 Single Pulse Avalanche Energy EAS Ratings -20 (Note 3) 13 Power Dissipation (Note 1a) 1.6 Power Dissipation (Note 1b) 0.7 Operating and Storage Junction Temperature Range -55 to +150 A mJ W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 80 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 180 °C/W Package Marking and Ordering Information Device Marking FDV045P20L Device FDV045P20L ©2016 Fairchild Semiconductor Corporation FDV045P20L Rev.1.0 Package SOT-23 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 3000 units www.fairchildsemi.com FDV045P20L P-Channel PowerTrench® MOSFET September 2016 Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 μA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 μA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±100 nA -1.5 V -20 V -18 mV/°C On Characteristics (Note 2) VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 μA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 μA, referenced to 25 °C rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance -0.5 -0.9 3 mV/°C VGS = -4.5 V, ID = -1.15 A 86 108 VGS = -2.5 V, ID = -0.7 A 97 121 VGS = -1.8 V, ID = -0.5 A 121 160 VGS = -4.5 V, ID = -1.15A, TJ = 125 °C 110 138 VDS = -5 V, ID = -1.15 A 3 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -10 V, VGS = 0 V, f = 1 MHz 812 1220 pF 119 167 pF 108 151 pF Ω 20 Switching Characteristics 8.4 17 VDD = -10 V, ID = -1.15 A, VGS = -4.5 V, RGEN = 6 Ω 6.5 13 ns 76 122 ns 26 42 ns Total Gate Charge VGS = 0 V to -4.5 V 7.2 10 nC VGS = 0 V to -2.5 V 4.4 6.2 td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDD = -10 V, ID = -1.15A ns nC 1.2 nC 1.8 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -1.15 A (Note 2) IF = -1.15 A, di/dt = 100 A/μs -0.8 -1.2 V 11 20 ns 2 10 nC Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. b) 180 °C/W when mounted on a minimum pad. a) 80 °C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. Starting TJ = 25 °C; P-ch: L = 3 mH, IAS = -3 A, VDD = -20 V, VGS = -6.4 V. 4. Pulsed Id refer to Fig 10 SOA curve for more details. ©2016 Fairchild Semiconductor Corporation FDV045P20L Rev.1.0 2 www.fairchildsemi.com FDV045P20L P-Channel PowerTrench® MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted. 8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 4 -ID, DRAIN CURRENT (A) VGS = -4.5 V VGS = -3 V 6 VGS = -2.5 V VGS = -2 V 4 VGS = -1.8 V 2 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0 1 2 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 4 VGS = -1.8 V VGS = -2 V 2 VGS = -2.5 V 1 VGS = -4.5 V VGS = -3 V 0 2 4 6 8 -ID, DRAIN CURRENT (A) Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage 300 1.5 ID = -1.15 A VGS = -4.5 V 1.4 r DS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 3 0 Figure 1. On Region Characteristics 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -75 -50 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 250 I D = -1.15 A 200 TJ = 125 oC 150 100 TJ = 25 oC 50 1.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 1.5 2.0 2.5 3.0 3.5 4.0 4.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 4. On-Resistance vs. Gate to Source Voltage Figure 3. Normalized On Resistance vs. Junction Temperature 8 -IS, REVERSE DRAIN CURRENT (A) 8 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX -ID, DRAIN CURRENT (A) PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 6 VDS = -5 V TJ = 150 oC 4 TJ = 25 oC 2 TJ = -55 oC 0 0 1 2 1 TJ = 150 oC TJ = 25 oC 0.1 0.01 0.001 0.0 3 -VGS, GATE TO SOURCE VOLTAGE (V) TJ = -55 oC 0.2 0.4 0.6 0.8 1.0 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics ©2016 Fairchild Semiconductor Corporation FDV045P20L Rev.1.0 VGS = 0 V Figure 6. Source to Drain Diode Forward Voltage vs. Source Current 3 www.fairchildsemi.com FDV045P20L P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted. 2000 ID = -1.15 A VDD = -10 V 1000 8 CAPACITANCE (pF) -V GS, GATE TO SOURCE VOLTAGE (V) 10 6 VDD = -8 V VDD = -12 V 4 2 0 Ciss Coss 100 0 2 4 6 f = 1 MHz VGS = 0 V 50 0.1 8 1 Qg, GATE CHARGE (nC) 50 5 10 -ID , DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT (A) 20 Figure 8. Capacitance vs. Drain to Source Voltage 7 6 4 TJ = 25 oC 3 TJ = 100 oC 2 THIS AREA IS LIMITED BY rDS(on) 100 μs 1 1 ms 10 ms 0.1 TJ = 125 oC 0.1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 1 0.001 Crss SINGLE PULSE TJ = MAX RATED RθJA = 180 oC/W o 1 0.01 0.01 10 TA = 25 C 0.1 100 ms 1s 10 s DC CURVE BENT TO MEASURED DATA 1 10 100 -VDS, DRAIN to SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (ms) Figure 9. Unclamped Inductive Switching Capability Figure 10. Forward Bias Safe Operating Area P(PK ), PEAK TRANSIENT POWER (W) 1000 SINGLE PULSE o RθJA = 180 C/W 100 o TA = 25 C 10 1 0.1 -4 10 10 -3 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) Figure 11. Single Pulse Maximum Power Dissipation ©2016 Fairchild Semiconductor Corporation FDV045P20L Rev.1.0 4 www.fairchildsemi.com FDV045P20L P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.001 -4 10 NOTES: ZθJA(t) = r(t) x RθJA RθJA = 180 oC/W Peak TJ = PDM x ZθJA(t) + TA Duty Cycle, D = t1 / t2 SINGLE PULSE -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 12. Junction-to-Ambient Transient Thermal Response Curve ©2016 Fairchild Semiconductor Corporation FDV045P20L Rev.1.0 5 www.fairchildsemi.com FDV045P20L P-Channel PowerTrench® MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted. AccuPower™ AttitudeEngine™ Awinda® AX-CAP®* BitSiC™ Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ DEUXPEED® Dual Cool™ EcoSPARK® EfficentMax™ ESBC™ ® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FastvCore™ FETBench™ FPS™ F-PFS™ FRFET® Global Power ResourceSM GreenBridge™ Green FPS™ Green FPS™ e-Series™ Gmax™ GTO™ IntelliMAX™ ISOPLANAR™ Marking Small Speakers Sound Louder and Better™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MicroPak2™ MillerDrive™ MotionMax™ MotionGrid® MTi® MTx® MVN® mWSaver® OptoHiT™ OPTOLOGIC® OPTOPLANAR® ®* ® tm Power Supply WebDesigner™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW/W/kW at a time™ SignalWise™ SmartMax™ SMART START™ Solutions for Your Success™ SPM® STEALTH™ SuperFET® SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS® SyncFET™ Sync-Lock™ TinyBoost® TinyBuck® TinyCalc™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ TranSiC™ TriFault Detect™ TRUECURRENT®* μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ VoltagePlus™ XS™ Xsens™ 仙童 ® *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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