FDV304P-D87Z

August 1997 FDV304P Digital FET, P-Channel General Description Features This P-Channel enhancement mode field effect transistors is produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts. -25 V, -0.46 A continuous, -1.5 A Peak. RDS(ON) = 1.1 Ω @ VGS = -4.5 V RDS(ON) = 1.5 Ω @ VGS= -2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOIC-16 SOT-223 Mark:304 D S G Absolute Maximum Ratings TA = 25oC unless other wise noted Symbol Parameter FDV304P Units VDSS Drain-Source Voltage -25 V VGSS Gate-Source Voltage -8 V ID Drain Current - Continuous -0.46 A - Pulsed -1.5 PD Maximum Power Dissipation TJ,TSTG Operating and Storage Temperature Range ESD Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf / 1500 Ohm) 0.35 W -55 to 150 °C 6.0 kV 357 °C/W THERMAL CHARACTERISTICS RθJA Thermal Resistance, Junction-to-Ambient © 1997 Fairchild Semiconductor Corporation FDV304P Rev.E1 Electrical Characteristics (TA = 25 OC unless otherwise noted ) Symbol Parameter Conditions Min -25 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC IDSS Zero Gate Voltage Drain Current VDS = -20 V, VGS = 0 V IGSS Gate - Body Leakage Current VGS = -8 V, VDS= 0 V V TJ = 55°C ON CHARACTERISTICS Gate Threshold Voltage Temp. Coefficient ID = -250 µA, Referenced to 25 oC VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA RDS(ON) Static Drain-Source On-Resistance µA -10 µA -100 nA On-State Drain Current Forward Transconductance mV /o C 2.1 -0.65 -0.86 -1.5 V VGS = -2.7 V, ID = -0.25 A 1.22 1.5 Ω VGS = -4.5 V, ID = -0.5 A 0.87 1.1 1.21 2 TJ =125°C gFS -1 (Note) ∆VGS(th)/∆TJ ID(ON) mV /o C -22 VGS = -2.7 V, VDS = -5 V -0.5 VGS = -4.5 V, VDS = -5 V -1 A VDS = -5 V, ID= -0.5 A 0.8 S VDS = -10 V, VGS = 0 V, f = 1.0 MHz 63 pF 34 pF 10 pF DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance SWITCHING CHARACTERISTICS tD(on) Turn - On Delay Time tr Turn - On Rise Time tD(off) Turn - Off Delay Time tf Turn - Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge (Note) VDD = -6 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 50 Ω VDS = -5 V, ID = - 0.25 A, VGS = -4.5 V 7 20 ns 8 20 ns 55 110 ns 35 70 ns 1.1 1.5 nC 0.32 nC 0.25 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Maximum Continuous Drain-Source Diode Forward Current VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.5 A (Note) -0.89 -0.5 A -1.2 V Note: Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%. FDV304P Rev.E1 Typical Electrical Characteristics -1.6 VGS = -4.5V -3.5 R DS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.0 -1.25 -2.7 -2.5 -1 -0.75 -2.0 -0.5 -0.25 -1.5 I D , DRAIN-SOURCE CURRENT (A) -1.5 0 0 -1 -2 -3 -4 V -1.4 GS = -2.0 V -1.2 -2.5 -2.7 -1 -3.0 -3.5 -4.0 -0.8 -4.5 -0.6 -5 0 -0.2 V DS , DRAIN-SOURCE VOLTAGE (V) V GS = -2.7V 1.2 1 0.8 -25 25°C R DS(on) , ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = -0.25A 0 25 50 75 100 T J, JUNCTION TEMPERATURE (°C) 125 3 2 1 0 150 -1 -1.5 J -2.5 -3 -3.5 -4 -4.5 -5 Figure 4. On Resistance Variation with Gate-To- Source Voltage. 0.5 = -55°C -I , REVERSE DRAIN CURRENT (A) T -2 V GS , GATE TO SOURCE VOLTAGE (V) -1 V DS = -5V I D = -0.5A 125°C 4 Figure 3. On-Resistance Variation with Temperature. 25°C -0.75 125°C -0.5 -0.25 VGS = 0V 0.1 T J = 125°C 25°C 0.01 -55°C S I D , DRAIN CURRENT (A) -1 5 1.6 0.6 -50 -0.8 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. Figure 1. On-Region Characteristics. 1.4 -0.4 -0.6 I D , DRAIN CURRENT (A) 0 -0.5 -1 -1.5 -2 -2.5 V GS , GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. -3 0.0001 0 0.2 0.4 0.6 0.8 1 -V SD , BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDV304P Rev.E1 Typical Electrical And Thermal Characteristics 150 VDS = 5V I D = -0.25A 100 10V 15V 4 Ciss CAPACITANCE (pF) -V GS , GATE-SOURCE VOLTAGE (V) 5 3 2 1 50 Coss 20 Crss f = 1 MHz 10 V GS = 0 V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 5 0.1 Q g , GATE CHARGE (nC) 2 S( ON I )L M IT 10 0m 25 s 1s 10 0.1 DC VGS = -2.7V SINGLE PULSE R θJA = 357 °C/W TA = 25°C SINGLE PULSE R θJA =357° C/W TA = 25°C 4 POWER (W) RD s 3 2 1 0 0.001 0.2 0.5 -V DS 1 2 5 10 20 0.01 35 0.1 1 10 100 300 SINGLE PULSE TIME (SEC) , DRAIN-SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. Figure 9. Maximum Safe Operating Area. 1 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -I D , DRAIN CURRENT (A) 0.5 0.01 0.1 15 5 1m s 1 0.02 0.5 1 5 10 , DRAIN TO SOURCE VOLTAGE (V) DS Figure 8. Capacitance Characteristics. Figure 7. Gate Charge Characteristics. 0.05 0.3 -V 0.5 D = 0.5 0.2 0.2 0.1 0.1 0.05 0.02 0.01 0.005 R θJA (t) = r(t) * R θJA R θJA = 357 °C/W 0.05 P(pk) 0.02 0.01 t1 Single Pulse TJ - T = P * R JA (t) θ Duty Cycle, D = t1 /t2 0.002 0.001 0.0001 t2 0.001 0.01 0.1 t1 , TIME (sec) 1 10 A 100 300 Figure 11. Transient Thermal Response Curve. FDV304P Rev.E1