FDW2502P
Dual P-Channel 2.5V Specified PowerTrench MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild's Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V –12V).
• –4.4 A, –20 V. RDS(ON) = 35 mΩ @ VGS = –4.5 V
• Extended VGSS range (±12V) for battery applications.
Applications
• High performance trench technology for extremely
RDS(ON) = 57 mΩ @ VGS = –2.5 V.
low RDS(ON) .
• Load switch
• Low profile TSSOP-8 package.
• Motor drive
• DC/DC conversion
• Power management
G2
S2
S2
D2
G1
S1
S1
D1
TSSOP-8
1
8
2
7
3
6
4
5
Pin 1
Absolute Maximum Ratings
Symbol
TA=25oC unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
–20
V
VGSS
Gate-Source Voltage
±12
V
ID
Drain Current
–4.4
A
– Continuous
(Note 1a)
– Pulsed
PD
–30
Power Dissipation for Single Operation
TJ, TSTG
(Note 1a)
1.0
(Note 1b)
0.6
W
-55 to +150
°C
(Note 1a)
125
°C/W
(Note 1b)
208
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
2502P
FDW2502P
13’’
12mm
2500 units
2008 Fairchild Semiconductor Corporation
FDW2502P Rev. F1 (W)
FDW2502P
July 2008
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ
Max
Units
Off Characteristics
BVDSS
VGS = 0 V, ID = –250 µA
–20
V
∆BVDSS
∆TJ
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = –250 µA, Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = –16 V,
VGS = 0 V
–1
µA
IGSS
Gate–Body Leakage
VGS = ±12 V,
VDS = 0 V
±100
nA
–1.5
V
On Characteristics
–14
mV/°C
(Note 2)
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
gFS
VDS = VGS, ID = –250 µA
–0.4
–0.9
ID = –250 µA, Referenced to 25°C
3.2
27
35
38
On–State Drain Current
VGS = –4.5 V,
ID = –4.4 A
VGS = –4.5 V, ID = –4.4 ,TJ=125°C
VGS = –2.5 V,
ID = –3.3 A
VGS = –4.5 V,
VDS = –5 V
Forward Transconductance
VDS = –5 V,
ID = –4.4 A
VDS = –10 V,
f = 1.0 MHz
V GS = 0 V,
mV/°C
35
56
57
–30
mΩ
A
18
S
1465
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
VGS = 15 mV, f = 1.0 MHz
310
pF
155
pF
7.7
Ω
(Note 2)
Total Gate Charge
VDD = –10 V,
VGS = –4.5 V,
ID = –1 A,
RGEN = 6 Ω
VDS = –5 V,
VGS = –5 V
ID = –4.4 A,
14
25
8
16
ns
ns
51
82
ns
29
47
ns
15
21
nC
Qgs
Gate–Source Charge
2.9
nC
Qgd
Gate–Drain Charge
3.5
nC
Drain–Source Diode Characteristics and Maximum Ratings
IF = –4.4 A,
diF/dt = 100 A/µs
trr
Diode Reverse Recovery Time
Qrr
Diode Reverse Recovery Charge
IS
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = –0.83 A
Voltage
VSD
(Note 2)
21
ns
8.1
nC
–0.7
–0.83
A
–1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) RθJA is 125°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) RθJA is 208°C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDW2502P Rev. F1 (W)
FDW2502P
Electrical Characteristics
FDW2502P
Typical Characteristics
2.2
30
-3.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-ID, DRAIN CURRENT (A)
VGS = -4.5V
-2.5V
-3.5V
20
-2.0V
10
0
1.8
1.6
-2.5V
1.4
-3.0V
1.2
-3.5V
1
2
3
4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
5
0
Figure 1. On-Region Characteristics.
-4.5V
10
20
-ID, DRAIN CURRENT (A)
30
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.09
1.4
ID = -2.2A
1.3
RDS(ON), ON-RESISTANCE (OHM)
ID = -4.4A
VGS = - 4.5V
1.2
1.1
1
0.9
0.8
0.07
0.05
o
TA = 125 C
0.03
TA = 25oC
0.01
-50
-25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (oC)
125
150
1
Figure 3. On-Resistance Variation with
Temperature.
2
3
4
5
6
7
8
-VGS, GATE TO SOURCE VOLTAGE (V)
9
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
30
10
VGS = 0V
25
-IS, REVERSE DRAIN CURRENT (A)
VDS = -5V
-ID, DRAIN CURRENT (A)
-4.0V
1
0.8
0
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
VGS = - 2.0V
2
TA = -55oC
125oC
20
25oC
15
10
5
0
0.5
1
1.5
2
2.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3
1
o
TA = 125 C
0.1
25oC
0.01
-55oC
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
-VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW2502P Rev. F1(W)
FDW2502P
Typical Characteristics
2000
f = 1 MHz
VGS = 0 V
ID = -4.4A
8
1600
VDS = -5V
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
10
-15V
6
-10V
4
Ciss
1200
800
Coss
2
400
0
0
Crss
0
4
8
12
16
20
Qg, GATE CHARGE (nC)
24
28
0
Figure 7. Gate Charge Characteristics.
20
Figure 8. Capacitance Characteristics.
50
100
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
100µs
10
1ms
10ms
100ms
1s
1
10s
DC
VGS = -4.5V
SINGLE PULSE
RθJA = 208oC/W
0.1
TA = 25oC
0.01
0.1
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
100
SINGLE PULSE
RθJA = 208°C/W
TA = 25°C
40
30
20
10
0
0.0001
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
-ID, DRAIN CURRENT (A)
5
10
15
-VDS, DRAIN TO SOURCE VOLTAGE (V)
0.001
0.01
0.1
1
t1, TIME (sec)
10
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
0.2
0.1
o
RθJA = 208 C/W
0.1
0.05
P(pk)
0.02
t1
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1.
Transient thermal response will change depending on the circuit board design.
FDW2502P Rev. F1(W)
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2.
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Rev. I35
