FDY1002PZ

FDY1002PZ

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    SOT-563

  • 描述:

    此双 P 沟道 MOSFET 是使用先进的 Power Trench 工艺设计的,可优化 rDS(on)@VGS = –1.5 V。

  • 数据手册
  • 价格&库存
FDY1002PZ 数据手册
2021/8/6 FAIR-S-A0002366002-1.pdf https://rocelec.widen.net/view/pdf/ndq325fhpn/FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw 1/7 2021/8/6 FAIR-S-A0002366002-1.pdf https://rocelec.widen.net/view/pdf/ndq325fhpn/FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw 2/7 2021/8/6 FAIR-S-A0002366002-1.pdf https://rocelec.widen.net/view/pdf/ndq325fhpn/FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw 3/7 2021/8/6 FAIR-S-A0002366002-1.pdf https://rocelec.widen.net/view/pdf/ndq325fhpn/FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw 4/7 2021/8/6 FAIR-S-A0002366002-1.pdf https://rocelec.widen.net/view/pdf/ndq325fhpn/FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw 5/7 2021/8/6 FAIR-S-A0002366002-1.pdf https://rocelec.widen.net/view/pdf/ndq325fhpn/FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw 6/7 2021/8/6 FAIR-S-A0002366002-1.pdf https://rocelec.widen.net/view/pdf/ndq325fhpn/FAIR-S-A0002366002-1.pdf?t.download=true&u=5oefqw 7/7
FDY1002PZ 价格&库存

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FDY1002PZ
  •  国内价格
  • 1+4.00750
  • 10+3.40640
  • 30+2.80530
  • 100+2.30440
  • 500+2.00380

库存:0

FDY1002PZ
  •  国内价格
  • 1+5.07429
  • 10+4.21631
  • 71+1.60972
  • 194+1.52801
  • 6000+1.49532

库存:0