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FDY4000CZ
Complementary N & P-Channel PowerTrench®
MOSFET
Features
General Description
Max rDS(on)
0.7: at VGS = 4.5V, ID = 600mA
Max rDS(on)
0.85: at VGS = 2.5V, ID = 500mA
This Complementary N & P-Channel MOSFET has been
designed using Fairchild Semiconductor’s advanced Power
Trench® process to optimize the rDS(ON) @ VGS= 2.5V and
specify the rDS(ON) @ VGS = 1.8V.
Max rDS(on)
1.25: at VGS = 1.8V, ID =150 mA
Applications
Q1:
Q2:
N-Channel
P-Channel
Level shifting
Max rDS(on)
1.2: at VGS = -4.5V, ID = -350mA
Max rDS(on)
1.6: at VGS = -2.5V, ID = -300mA
Power Supply Converter Circuits
Max rDS(on)
2.7: at VGS = -1.8V, ID = -150mA
Load/Power Switching Cell Phones, Pagers
ESD protection diode (note 3)
RoHS Compliant
6
5
S2 4
3
D2
G2 5
2
G1
6
1
S1
4
1
D1
2
3
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
VGS
Gate to Source Voltage
Q1
20
Drain Current -Continuous
ID
(Note 1a)
-Pulsed
Power Dissipation (Steady State)
PD
TJ, TSTG
(Note 1a)
(Note 1b)
Operating and Storage Jaunting Temperature Range
Q2
-20
Units
V
±12
±8
V
600
-350
1000
-1000
625
446
-55 to 150
mA
mW
°C
Thermal Characteristics
RTJA
Thermal Resistance, Junction to Ambient
(Note 1a)
200
RTJA
Thermal Resistance, Junction to Ambient
(Note 1b)
280
°C/W
Package Marking and Ordering Information
Device Marking
E
Device
FDY4000CZ
©2009 Fairchild Semiconductor Corporation
FDY4000CZ Rev. B2
Package
SC89-6
1
Reel Size
7”
Tape Width
8mm
Quantity
3000units
www.fairchildsemi.com
FDY4000CZ Complementary N & P-Channel PowerTrench® MOSFET
November 2009
Symbol
Parameter
Test Conditions
Type Min
Typ
Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250PA, VGS = 0V
ID = -250PA, VGS = 0V
Q1
Q2
'BVDSS
'TJ
Breakdown Voltage Temperature
Coefficient
ID = 250PA, referenced to 25°C
ID = -250PA, referenced to 25°C
Q1
Q2
IDSS
Zero Gate Voltage Drain Current
VDS = 16V, VDS =0V
VDS = -16V, VDS =0V
Q1
Q2
1
-3
PA
IGSS
Gate-Body Leakage
VGS = ±12V, VDS = 0V
VGS = ±4.5V, VDS = 0V
VGS = ±8V, VDS = 0V
Q1
Q1
Q2
±10
±1
±10
PA
VGS = VDS, ID = 250PA
VGS = VDS, ID = -250PA
Q1
Q2
0.6
-0.6
1.5
-1.5
V
Q1
Q2
-3
3
0.30
0.40
0.80
0.35
0.70
0.85
1.25
1.00
1.2
1.6
2.7
1.6
20
-20
15
-15
V
mV/°C
On Characteristics (note 2)
VGS(th)
Gate to Source Threshold Voltage
'VGS(th)
'TJ
Gate to Source Threshold Voltage ID = 250PA, referenced to 25°C
Temperature Coefficient
ID = -250PA, referenced to 25°C
rDS(on)
gFS
Drain to Source On Resistance
Forward Transconductance
VGS = 4.5V, ID = 600mA
VGS = 2.5V, ID = 500mA
VGS = 1.8V, ID = 150mA,
VGS = 4.5V, ID = 600mA,TJ = 125°C
Q1
1.0
-1.0
mV/°C
:
VGS = -4.5V, ID = --350mA
VGS = -2.5V, ID = -300mA
VGS = -1.8V, ID = -150mA
VGS = -4.5V, ID = -350mA, TJ =125°C
Q2
0.5
0.8
1.3
0.7
VDS = 5V, ID = 600mA
VDS = -5V, ID = -350mA
Q1
Q2
1.8
1
S
Q1
VDS = 10V, VGS = 0V, f = 1MHz
Q1
Q2
60
100
pF
Q1
Q2
20
30
pF
Q1
Q2
10
15
pF
Q1
VDD= 10V, ID = 1A,
VGS= 4.5V, Rg = 6:
Q1
Q2
6
6
12
12
ns
Q1
Q2
8
13
16
23
ns
Q2
VDD= -10V, ID = -0.5A,
VGS= -4.5V, Rg = 6:
Q1
Q2
8
8
16
16
ns
Q1
Q2
2.4
1
4.8
2
ns
Q1
Q2
0.8
1.0
1.1
1.4
nC
Q1
Q2
0.16
0.2
nC
Q1
Q2
0.26
0.3
nC
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Q2
VDS = -10V, VGS = 0V, f = 1MHz
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller”Charge
©2009 Fairchild Semiconductor Corporation
FDY4000CZ Rev. B2
Q1
VDS= 10V, ID = 600mA, VGS= 4.5V
Q2
VDS= -10V, ID = -350mA, VGS= -4.5V
2
www.fairchildsemi.com
FDY4000CZ Complementary N & P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min
Typ
Max Units
1.2
-1.2
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward
Voltage
VGS = 0V, IS = 150mA (Note 2)
VGS = 0V, IS = -150mA (Note 2)
Q1
Q2
0.7
-0.8
trr
Reverse Recovery Time
Q1
Q2
8
11
ns
Qrr
Reverse Recovery Charge
Q1
IF = 600mA, di/dt = 100A/Ps
Q2
IF = -350mA, di/dt = 100A/Ps
Q1
Q2
1
2
nC
V
Notes:
1: RTJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RTJCis guaranteed by design while RTJA is determined by the user's board design.
b) 280°C/W when mounted
on a minimum pad of 2 oz
copper
a) 200°C/W when mounted
on a 1 in2 pad of 2 oz copper
Scale 1:1 on letter size paper
2: Pulse Test : Pulse Width < 300us, Duty Cycle < 2.0%
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2009 Fairchild Semiconductor Corporation
FDY4000CZ Rev. B2
3
www.fairchildsemi.com
FDY4000CZ Complementary N & P-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
1
, ' '5$,1&855(17$
5 ' 6 2 1 1 2 5 0 $ /,= ( '
' 5 $ ,1 6 2 8 5 & ( 2 1 5 ( 6 ,6 7 $ 1 & (
2.6
9*6 9
9
9
0.8
9
9
0.6
0.4
0.2
0
2.4
9*6 9
2.2
2
1.8
9
1.6
1.4
9
9
1.2
1
9
0.8
0
0.25
0.5
0.75
1
0
0.2
0.4
9'6'5$,16285&(92/7$*(9
1
Figure 2. Normalized on-Resistance vs. Drain
Current and Gate Voltage
0.9
1.6
ID = 300mA
,' P$
9*6 9
1.4
R DS(ON), ON-RESISTANCE (OHM)
5 ' 6 2 1 1 2 5 0 $ /,=( '
' 5 $ ,1 6 2 8 5 & ( 2 1 5 ( 6 ,6 7$ 1 & (
0.8
,''5$,1&855(17$
Figure 1. On-Region Characteristics
1.2
1
0.8
0.6
-50
0.8
0.7
0.6
TA = 125oC
0.5
0.4
0.3
TA = 25oC
0.2
-25
0
25
50
75
100
125
1
150
2
3
5
4
VGS, GATE TO SOURCE VOLTAGE (V)
R
7--81&7,217(03(5$785( &
Figure 3. Normalized on-Resistance vs.
Temperature
Figure 4. On-Resistance vs.
Gate-to-Source Voltage
1.5
1
25oC
o
TA = -55 C
I S , RE VER SE DR A IN CU R RE NT (A )
VDS = 5V
ID , DRAIN CURRENT (A)
0.6
1.2
125oC
0.9
0.6
0.3
0
VGS = 0V
0.1
TA = 125oC
0.01
25oC
-55oC
0.001
0.0001
0.5
1
1.5
2
2.5
3
0
VGS, GATE TO SOURCE VOLTAGE (V)
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode Forward
Voltage vs. Source Current and Temperature
Figure 5. Transfer Characteristics
©2009 Fairchild Semiconductor Corporation
FDY4000CZ Rev. B2
0.2
4
www.fairchildsemi.com
FDY4000CZ Complementary N & P-Channel PowerTrench® MOSFET
Typical Characteristics Q1 (N-Channel)
100
,' P$
I 0+]
9*6 9
90
9
4
80
9'6 9
&$3$&,7$1 & (S)
9 *6 *$7(6285&(92/7$*(9
5
3
9
2
1
&LVV
70
60
50
40
&RVV
30
20
10
0
&UVV
0
0
0.2
0.4
0.6
0.8
1
0
4
4J*$7(&+$5*(Q&
20
30
P(pk), PEAK TRANSIENT POWER (W)
ID , DRAIN CURRENT (A)
16
Figure 8. Capacitance vs. Drain to source
voltage
10
RDS(ON) LIMIT
1ms
10ms
0.1
VGS = 4.5V
SINGLE PULSE
o
RJA = 280 C/W
100ms
10s
1s
DC
o
TA = 25 C
0.01
0.1
1
10
SINGLE PULSE
RJA = 280°C/W
TA = 25°C
25
20
15
10
5
0
0.0001
100
0.001
0.01
VDS, DRAIN-SOURCE VOLTAGE (V)
0.1
1
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
12
9'6'5$,1726285&(92/7$*(9
Figure 7. Gate Charge Characteristics
1
8
Figure 10. Single Pulse Maximum Power
Dissipation
1
D=0.5
0.2
0.1
0.05
0.02
0.01
RJA(t) = r(t) * RJA
RJA =280 °C/W
P(pk)
0.1
t1
t2
TJ - TA = P * RJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
©2009 Fairchild Semiconductor Corporation
FDY4000CZ Rev. B2
5
www.fairchildsemi.com
FDY4000CZ Complementary N & P-Channel PowerTrench® MOSFET
Typical Characteristics Q1 (N-Channel)
1
2.6
VGS=-1.8V
-2.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
-I D, DRAIN CURRENT (A)
VGS= -4.5V
0.8
-4.0V
-3.0V
0.6
-2.0V
0.4
-1.8V
0.2
-2.0V
1.8
-2.5V
1.4
-3.0V
-3.5V
1
0
0.5
1
1.5
-VDS, DRAIN TO SOURCE VOLTAGE (V)
0
2
Figure 12. On-Region Characteristics
-4.5V
0.2
0.4
0.6
-ID, DRAIN CURRENT (A)
0.8
1
Figure 13. Normalized on-Resistance vs. Drain
Current and Gate Voltage
1.6
2
ID = -0.35A
VGS = -4.5V
RDS(ON), ON-RESISTANCE (OHM)
ID = -0.175A
1.4
1.2
1
0.8
0.6
-50
1.75
1.5
1.25
1
TA = 125oC
0.75
TA = 25oC
0.5
0.25
-25
0
25
50
75
100
TJ, JUNCTION TEMPERATURE (oC)
125
0
150
Figure 14. Normalized on-Resistance vs.
Temperature
2
4
6
8
-VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 15. On-Resistance vs.
Gate-to-Source Voltage
1
1
-IS, REVERSE DRAIN CURRENT (A)
VDS = -5V
-ID, DRAIN CURRENT (A)
-4.0V
0.6
0
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.2
0.8
0.6
0.4
o
TA = 125 C
-55oC
0.2
25oC
0
0.5
VGS = 0V
0.1
0.01
TA = 125oC
25oC
0.001
-55oC
0.0001
1
1.5
2
-VGS, GATE TO SOURCE VOLTAGE (V)
2.5
0
1.4
Figure 17. Source to Drain Diode Forward
Voltage vs. Source Current and Temperature
Figure 16. Transfer Characteristics
©2009 Fairchild Semiconductor Corporation
FDY4000CZ Rev. B2
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
6
www.fairchildsemi.com
FDY4000CZ Complementary N & P-Channel PowerTrench® MOSFET
Typical Characteristics Q2 (P-Channel)
10
150
f = 1 MHz
VGS = 0 V
125
8
VDS = -5V
CAPACITANCE (pF)
-V GS, GATE-SOURCE VOLTAGE (V)
ID = -0.35A
-15V
6
-10V
4
2
100
Ciss
75
Coss
50
25
Crss
0
0
0
0.5
1
1.5
Qg, GATE CHARGE (nC)
2
0
2.5
Figure 18. Gate Charge Characteristics
4
6
8
10
-VDS, DRAIN TO SOURCE VOLTAGE (V)
12
Figure 19. Capacitance vs. Drain to source
voltage
10
10
P(pk), PEAK TRANSIENT POWER (W)
-ID, DRAIN CURRENT (A)
2
100Ps
1
RDS(ON) LIMIT
0.1
1ms
10ms
100ms
1s
10s
DC
VGS = -4.5V
SINGLE PULSE
RTJA = 280oC/W
o
TA = 25 C
0.01
0.01
6
4
2
0
0.0001
0.1
1
10
SINGLE PULSE
RTJA = 280Ⱌ/W
TA = 25Ⱌ
8
0.001
0.01
100
0.1
t1, TIME (sec)
1
10
100
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 21. Single Pulse Maximum Power
Dissipation
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
Figure 20. Maximum Safe Operating Area
1
D = 0.5
RTJA(t) = r(t) * RTJA
RTJA =280 Ⱌ /W
0.2
0.1
P(pk)
0.1
0.05
t1
t2
TJ - T A = P * RTJA(t)
Duty Cycle, D = t1 / t2
0.02
0.01
SINGLE PULSE
0.01
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 22. Transient Thermal Response Curve
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
©2009 Fairchild Semiconductor Corporation
FDY4000CZ Rev. B2
7
www.fairchildsemi.com
FDY4000CZ Complementary N & P-Channel PowerTrench® MOSFET
Typical Characteristics Q2 (P-Channel)
1.70
1.50
A
0.50
0.30
0.15
6
0.50
B
4
1.20 BSC
1.60
1
3
1.25
1.80
0.1 C B A
(0.20)
0.30
0.55
0.50
1.00
TOP VIEW
LAND PATTERN RECOMMENDATION
0.60
0.56
0.18
0.10
SEE DETAIL A
C
0.35 BSC
0.20 BSC
DETAIL A
0.10
0.00
SCALE 2 : 1
BOTTOM VIEW
NOTES:
A) THIS PACKAGE CONFORMS TO EIAJ
SC89 PACKAGING STANDARD.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DRAWING CONFORMS TO ASME Y14.5M-1994
D) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
MAD06ArevA
©2009 Fairchild Semiconductor Corporation
FDY4000CZ Rev. B2
8
www.fairchildsemi.com
FDY4000CZ Complementary N & P-Channel PowerTrench® MOSFET
Dimensional Outline and Pad Layout
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
FPS™
PowerTrench®
The Power Franchise®
Auto-SPM™
F-PFS™
PowerXS™
®
Build it Now™
FRFET®
Programmable Active Droop™
SM
®
Global Power Resource
CorePLUS™
QFET
TinyBoost™
Green FPS™
QS™
CorePOWER™
TinyBuck™
Green FPS™ e-Series™
Quiet Series™
CROSSVOLT™
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Gmax™
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CTL™
TinyLogic®
GTO™
Current Transfer Logic™
®
TINYOPTO™
IntelliMAX™
EcoSPARK
™
TinyPower™
ISOPLANAR™
EfficentMax™
Saving our world, 1mW /W /kW at a time™
TinyPWM™
MegaBuck™
EZSWITCH™*
SmartMax™
TinyWire™
™*
MICROCOUPLER™
SMART START™
TriFault Detect™
MicroFET™
SPM®
TRUECURRENT™*
MicroPak™
STEALTH™
®
MillerDrive™
SuperFET™
Fairchild®
MotionMax™
SuperSOT™-3
Fairchild Semiconductor®
Motion-SPM™
SuperSOT™-6
UHC®
®
FACT Quiet Series™
Ultra FRFET™
OPTOLOGIC
SuperSOT™-8
FACT®
OPTOPLANAR®
UniFET™
SupreMOS™
®
FAST®
VCX™
SyncFET™
FastvCore™
VisualMax™
Sync-Lock™
FETBench™
XS™
®*
PDP SPM™
FlashWriter® *
Power-SPM™
tm
tm
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2.
A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
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Definition
Advance Information
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Datasheet contains the design specifications for product development. Specifications
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No Identification Needed
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Obsolete
Not In Production
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Semiconductor. The datasheet is for reference information only.
Rev. I41
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