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FDZ1323NZ
Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET
20 V, 10 A, 13 mΩ
Features
General Description
Max rS1S2(on) = 13 mΩ at VGS = 4.5 V, IS1S2 = 1 A
This device is designed specifically as a single package solution
for Li-Ion battery pack protection circuit and other ultra-portable
applications. It features two common drain N-channel
MOSFETs, which enables bidirectional current flow, on
Fairchild’s advanced PowerTrench® process with state of the art
“low pitch” WLCSP packaging process, the FDZ1323NZ
minimizes both PCB space and rS1S2(on). This advanced
WLCSP MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, ultra-low profile packaging, low
gate charge and low rS1S2(on).
Max rS1S2(on) = 13 mΩ at VGS = 3.8 V, IS1S2 = 1 A
Max rS1S2(on) = 16 mΩ at VGS = 3.1 V, IS1S2 = 1 A
Max rS1S2(on) = 18 mΩ at VGS = 2.5 V, IS1S2 = 1 A
Occupies only 3 mm2 of PCB area
Ultra-thin package: less than 0.35 mm height when mounted
to PCB
High power and current handling capability
HBM ESD protection level > 3.6 kV (Note 3)
Applications
RoHS Compliant
Battery management
Load switch
Battery protection
S1
PIN1
PIN1
G1
S1
G1
S1
S2
G2
S2
G2
BOTTOM
TOP
WL-CSP 1.3X2.3
S2
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VS1S2
Source1 to Source2 Voltage
VGS
Gate to Source Voltage
IS1S2
PD
TJ, TSTG
Parameter
Source1 to Source2 Current
-Continuous
TA = 25°C
(Note 1a)
-Pulsed
Ratings
20
Units
V
±12
V
10
40
Power Dissipation
TA = 25°C
(Note 1a)
2
Power Dissipation
TA = 25°C
(Note 1b)
0.5
Operating and Storage Junction Temperature Range
-55 to +150
A
W
°C
Thermal Characteristics
RθJA
Thermal Resistance, Junction to Ambient
(Note 1a)
62
RθJA
Thermal Resistance, Junction to Ambient
(Note 1b)
257
°C/W
Package Marking and Ordering Information
Device Marking
EC
Device
FDZ1323NZ
©2013 Fairchild Semiconductor Corporation
FDZ1323NZ Rev.C7
Package
WL-CSP 1.3X2.3
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
www.fairchildsemi.com
FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET
September 2014
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
IS1S2
Zero Gate Voltage Source1 to Source2
Current
VS1S2 = 16 V, VGS = 0 V
1
μA
IGSS
Gate to Source Leakage Current
VGS = ±12 V, VS1S2 = 0 V
±10
μA
V
On Characteristics
VGS(th)
rS1S2(on)
gFS
Gate to Source Threshold Voltage
VGS = VS1S2, IS1S2 = 250 μA
0.4
0.9
1.2
VGS = 4.5 V, IS1S2 = 1 A
4.5
9.7
13
VGS = 3.8 V, IS1S2 = 1 A
5.5
10
13
Static Source1 to Source2 On Resistance VGS = 3.1 V, IS1S2 = 1 A
7
11
16
VGS = 2.5 V, IS1S2 = 1 A
8
13
18
VGS = 4.5 V, IS1S2 = 1 A,TJ = 125 oC
13
20
VS1S2 = 5 V, IS1S2 = 1 A
9
Forward Transconductance
mΩ
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VS1S2 = 10 V, VGS = 0 V,
f = 1 MHz
1545
2055
pF
269
405
pF
252
380
pF
12
22
ns
13
23
ns
34
54
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
13
23
ns
Qg
Total Gate Charge
17
24
nC
Qgs
Gate to Source1 Gate Charge
Qgd
Gate to Source2 “Miller” Charge
VS1S2 = 10 V, IS1S2 = 1 A,
VGS = 4.5 V, RGEN = 6 Ω
VS1S2 = 10 V, IS1S2 = 1 A,
VG1S1 = 4.5 V, VG2S2 = 0 V
1.9
nC
5.4
nC
Source1 to Source2 Diode Characteristics
Ifss
Maximum Continuous Source1 to Source2 Diode Forward Current
Vfss
Source1 to Source2 Diode Forward
Voltage
VG1S1 = 0 V, VG2S2 = 4.5 V,
Ifss = 1 A
(Note 2)
0.6
1
A
1.2
V
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
b. 257 °C/W when mounted on a
minimum pad of 2 oz copper.
a. 62 °C/W when mounted on
a 1 in2 pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 us, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied.
©2013 Fairchild Semiconductor Corporation
FDZ1323NZ Rev.C7
2
www.fairchildsemi.com
FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
40
VG1S1 = 4.5 V
VG1S1 = 3.8 V
30
VG1S1 = 3.1 V
20
VG1S1 = 2.5 V
VG1S1 = 2 V
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VG2S2 = 4.5 V
0
0.0
0.2
0.4
0.6
40
VGS = 4.5 V
30
VGS = 3.1 V
20
VGS = 2 V
10
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0
0.0
VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
0.4
0.6
0.8
1.0
Figure 2. On-Region Characteristics
2.0
2.0
NORMALIZED
SOURCE1 TO SOURCE2 ON-RESISTANCE
NORMALIZED
SOURCE1 TO SOURCE2 ON-RESISTANCE
0.2
VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure 1. On-Region Characteristics
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VG2S2 = 4.5 V
1.5
VG1S1 = 2 V
VG1S1 = 2.5 V
1.0
VG1S1 = 3.1 V
VG1S1 = 3.8 V
VG1S1 = 4.5 V
0.5
0
10
20
30
40
VGS = 2 V
1.5
VGS = 2.5 V
VGS = 3.1 V
1.0
0.5
0
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
20
30
40
rS1S2(on), SOURCE1 TO
1.0
0.8
-50
-25
0
25
50
75
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
50
IS1S2 = 1 A
40
30
TJ = 125 oC
20
10
TJ = 25 oC
0
1.0
100 125 150
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
Figure 6. On Resistance vs Gate to
Source Voltage
Figure 5. Normalized On Resistance
vs Junction Temperature
©2013 Fairchild Semiconductor Corporation
FDZ1323NZ Rev.C7
SOURCE2 ON-RESISTANCE (mΩ)
60
IS1S2 = 1 A
VGS = 4.5 V
1.2
0.6
-75
10
Figure 4. Normalized On-Resistance vs Source1
to Source2 Current and Gate Voltage
1.6
1.4
VGS = 4.5 V
VGS = 3.8 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
Figure 3. Normalized On-Resistance vs Source1
to Source2 Current and Gate Voltage
NORMALIZED
SOURCE1 TO SOURCE2 ON-RESISTANCE
VGS = 2.5 V
VGS = 3.8 V
3
www.fairchildsemi.com
FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
100
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
Ifss, SOURCE1 TO
SOURCE2 FORWARD CURRENT (A)
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
40
30
VS1S2 = 5 V
TJ = 150 oC
20
TJ = 25 oC
TJ = -55 oC
10
0
0.5
1.0
1.5
2.0
VG1S1 = 0 V, VG2S2 = 4.5 V
TJ = 150 oC
10
TJ = 25 oC
1
TJ = -55 oC
0.1
0.0
VGS, GATE TO SOURCE VOLTAGE (V)
0.6
0.8
1.0
1.2
Figure 8. Source1 to Source2 Diode
Forward Voltage vs Source Current
5000
4.5
VG2S2 = 0 V
IS1S2 = 1 A
Ciss
VS1S2 = 8 V
CAPACITANCE (pF)
VG1S1, GATE1 TO SOURCE1 VOLTAGE (V)
0.4
Vfss, BODY DIODE FORWARD VOLTAGE (V)
Figure 7. Transfer Characteristics
3.0
VS1S2 = 10 V
1.5
VS1S2 = 12 V
1000
Coss
Crss
f = 1 MHz
VGS = 0 V
100
0.1
0.0
0
4
8
12
16
20
Qg, GATE CHARGE (nC)
-1
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
-2
VS1S2 = 0 V
-3
10
-4
10
TJ = 125 oC
-5
10
-6
10
-7
10
-8
10
TJ = 25 oC
-9
10
-10
10
0
3
6
9
12
15
VGS, GATE TO SOURCE VOLTAGE (V)
20
50
10
1 ms
1
THIS AREA IS
LIMITED BY rDS(on)
0.1
RθJA = 257 oC/W
o
TA = 25 C
0.01
0.01
10 ms
SINGLE PULSE
TJ = MAX RATED
0.1
100 ms
1s
10 s
DC
CURVE BENT TO
MEASURED DATA
1
10
100
VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure 11. Gate Leakage Current
vs Gate to Source Voltage
©2013 Fairchild Semiconductor Corporation
FDZ1323NZ Rev.C7
10
Figure 10. Capacitance vs Source1
to Source2 Voltage
10
10
1
VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure 9. Gate Charge Characteristics
Ig, GATE LEAKAGE CURRENT (A)
0.2
Figure 12. Forward Bias Safe
Operating Area
4
www.fairchildsemi.com
FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
P(PK), PEAK TRANSIENT POWER (W)
100
10
SINGLE PULSE
RθJA = 257 oC/W
1
TA = 25 oC
0.4
-3
10
-2
-1
10
0
10
1
10
100
10
1000
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
2
NORMALIZED THERMAL
IMPEDANCE, ZθJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
SINGLE PULSE
o
RθJA = 257 C/W
(Note 1b)
0.001
-4
10
-3
10
-2
10
-1
10
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
©2013 Fairchild Semiconductor Corporation
FDZ1323NZ Rev.C7
5
www.fairchildsemi.com
FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET
Dimensional Outline and Pad Layout
Pin Definations:
Gate
Source1
Source2
B1, B2
A1, C1
A2, C2
Product Specific Dimensions:
D
E
X
Y
2.3 mm
1.3 mm
0.315 mm
0.49 mm
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions,
specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_UCBEA-006
©2013 Fairchild Semiconductor Corporation
FDZ1323NZ Rev.C7
6
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I71
©2013 Fairchild Semiconductor Corporation
FDZ1323NZ Rev.C7
7
www.fairchildsemi.com
FDZ1323NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET
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