Is Now Part of
To learn more about ON Semiconductor, please visit our website at
www.onsemi.com
Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
will need to change in order to meet ON Semiconductor’s system requirements. Since the ON Semiconductor
product management systems do not have the ability to manage part nomenclature that utilizes an underscore
(_), the underscore (_) in the Fairchild part numbers will be changed to a dash (-). This document may contain
device numbers with an underscore (_). Please check the ON Semiconductor website to verify the updated
device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please
email any questions regarding the system integration to Fairchild_questions@onsemi.com.
ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right
to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON
Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON
Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA
Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended
or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor
is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
FDZ1416NZ
Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET
24 V, 7 A, 23 m
Features
General Description
Max rS1S2(on) = 23 m at VGS = 4.5 V, IS1S2 = 1 A
This device is designed specifically as a single package solution
for Li-Ion battery pack protection circuit and other ultra-portable
applications. It features two common drain N-channel
MOSFETs, which enables bidirectional current flow, on
Fairchild’s advanced PowerTrench® process with state of the art
“low pitch” WLCSP packaging process, the FDZ1416NZ
minimizes both PCB space and rS1S2(on). This advanced
WLCSP MOSFET embodies a breakthrough in packaging
technology which enables the device to combine excellent
thermal transfer characteristics, ultra-low profile packaging, low
gate charge and low rS1S2(on).
Max rS1S2(on) = 25 m at VGS = 4 V, IS1S2 = 1 A
Max rS1S2(on) = 28 m at VGS = 3.1 V, IS1S2 = 1 A
Max rS1S2(on) = 33 m at VGS = 2.5 V, IS1S2 = 1 A
Occupies only 2.2 mm2 of PCB area
Ultra-thin package: less than 0.35 mm height when mounted
to PCB
High power and current handling capability
HBM ESD protection level > 3.2 kV (Note 3)
Applications
RoHS Compliant
Battery management
Load switch
Battery protection
S1
PIN1
PIN1
G1
S1
G1
S2
G2
G2
TOP
BOTTOM
S2
WL-CSP 1.4X1.6
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VS1S2
Source1 to Source2 Voltage
VGS
Gate to Source Voltage
IS1S2
PD
TJ, TSTG
Parameter
Source1 to Source2 Current
-Continuous
TA = 25°C
(Note 1a)
-Pulsed
Ratings
24
Units
V
±12
V
7
30
Power Dissipation
TA = 25°C
(Note 1a)
1.7
Power Dissipation
TA = 25°C
(Note 1b)
0.5
Operating and Storage Junction Temperature Range
-55 to +150
A
W
°C
Thermal Characteristics
RJA
Thermal Resistance, Junction to Ambient
(Note 1a)
74
RJA
Thermal Resistance, Junction to Ambient
(Note 1b)
230
°C/W
Package Marking and Ordering Information
Device Marking
EN
Device
FDZ1416NZ
©2012 Fairchild Semiconductor Corporation
FDZ1416NZ Rev.1.6
Package
WL-CSP 1.4X1.6
1
Reel Size
7 ’’
Tape Width
8 mm
Quantity
5000 units
www.fairchildsemi.com
FDZ1416NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET
June 2015
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
IS1S2
Zero Gate Voltage Source1 to Source2
Current
VS1S2 = 19 V, VGS = 0 V
1
A
IGSS
Gate to Source Leakage Current
VGS = ±12 V, VS1S2 = 0 V
±10
A
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VS1S2, IS1S2 = 250 A
VGS = 4.5 V, IS1S2 = 1 A
VGS = 4 V, IS1S2 = 1 A
rS1S2(on)
gFS
0.4
0.9
1.3
9
16
23
10
17
25
Static Source1 to Source2 On Resistance VGS = 3.1 V, IS1S2 = 1 A
11
19
28
VGS = 2.5 V, IS1S2 = 1 A
12
22
33
VGS = 4.5 V, IS1S2 = 1 A,TJ = 125 oC
24
36
VS1S2 = 5 V, IS1S2 = 1 A
4.5
Forward Transconductance
m
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VS1S2 = 12 V, VGS = 0 V,
f = 1 MHz
1140
1515
pF
136
220
pF
129
205
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
VS1S2 = 12 V, IS1S2 = 1 A,
VGS = 4.5 V, RGEN = 6
9.5
19
ns
12
22
ns
ns
td(off)
Turn-Off Delay Time
37
59
tf
Fall Time
16
33
ns
Qg
Total Gate Charge
12
17
nC
Qgs
Gate to Source1 Gate Charge
Qgd
Gate to Source2 “Miller” Charge
VS1S2 = 12 V, IS1S2 = 1 A,
VG1S1 = 4.5 V, VG2S2 = 0 V
1.6
nC
3.7
nC
Source1 to Source2 Diode Characteristics
Ifss
Maximum Continuous Source1 to Source2 Diode Forward Current
Vfss
Source1 to Source2 Diode Forward
Voltage
VG1S1 = 0 V, VG2S2 = 4.5 V,
Ifss = 1 A
(Note 2)
0.7
1
A
1.2
V
Notes:
1. RJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RJC is guaranteed by design while RCA is determined by
the user's board design.
a. 74 °C/W when mounted on a
1 in2 pad of 2 oz copper
b. 230 °C/W when mounted on a
minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 us, Duty cycle < 2.0%.
3. The diode connected between the gate and source serves only protection against ESD. No gate overvoltage rating is implied.
©2012 Fairchild Semiconductor Corporation
FDZ1416NZ Rev.1.6
2
www.fairchildsemi.com
FDZ1416NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET
Electrical Characteristics TJ = 25 °C unless otherwise noted
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
30
VG1S1 = 4.5 V
VG1S1 = 2.5 V
VG1S1 = 4 V
VG1S1 = 3.1 V
20
VG1S1 = 2 V
10
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
VG2S2 = 4.5 V
0
0.0
0.2
0.4
0.6
0.8
1.0
30
VGS = 4.5 V
VGS = 4 V
VGS = 2 V
10
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
0
0.0
VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
0.4
0.6
0.8
1.0
Figure 2. On-Region Characteristics
2.0
2.0
NORMALIZED
SOURCE1 TO SOURCE2 ON-RESISTANCE
NORMALIZED
SOURCE1 TO SOURCE2 ON-RESISTANCE
0.2
VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure 1. On-Region Characteristics
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
VG2S2 = 4.5 V
1.5
VG1S1 = 2 V
VG1S1 = 3.1 V
VG1S1 = 2.5 V
1.0
VG1S1 = 4.5 V
VG1S1 = 4 V
0.5
0
10
20
30
1.5
VGS = 2.5 V
VGS = 3.1 V
VGS = 4 V
1.0
VGS = 4.5 V
0.5
0
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
rS1S2(on), SOURCE1 TO
0.8
-25
0
25
50
75
30
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
80
IS1S2 = 1 A
60
TJ = 125 oC
40
20
TJ = 25 oC
0
1.0
100 125 150
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (oC)
Figure 5. Normalized On Resistance
vs Junction Temperature
©2012 Fairchild Semiconductor Corporation
FDZ1416NZ Rev.1.6
SOURCE2 ON-RESISTANCE (m)
1.0
-50
20
100
IS1S2 = 1 A
VGS = 4.5 V
1.2
0.6
-75
10
Figure 4. Normalized On-Resistance vs Source1
to Source2 Current and Gate Voltage
1.6
1.4
PULSE DURATION = 80s
DUTY CYCLE = 0.5% MAX
VGS = 2 V
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
Figure 3. Normalized On-Resistance vs Source1
to Source2 Current and Gate Voltage
NORMALIZED
SOURCE1 TO SOURCE2 ON-RESISTANCE
VGS = 2.5 V
VGS = 3.1 V
20
Figure 6. On Resistance vs Gate to
Source Voltage
3
www.fairchildsemi.com
FDZ1416NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
100
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
Ifss, SOURCE1 TO
SOURCE2 FORWARD CURRENT (A)
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
30
VS1S2 = 5 V
20
TJ = 150 oC
TJ = 25 oC
10
TJ = -55 oC
0
0.5
1.0
1.5
2.0
VG1S1 = 0 V, VG2S2 = 4.5 V
10
1
TJ = 25 oC
0.1
TJ = -55 oC
0.01
0.001
0.0
Figure 7. Transfer Characteristics
0.4
0.6
1.0
1.2
2000
4.5
VG2S2 = 0 V
IS1S2 = 1 A
Ciss
VS1S2 = 9 V
1000
3.0
VS1S2 = 12 V
VS1S2 = 15 V
1.5
Coss
f = 1 MHz
VGS = 0 V
100
0.1
0.0
0
5
10
15
Qg, GATE CHARGE (nC)
-1
IS1S2, SOURCE1 TO SOURCE2 CURRENT (A)
VS1S2 = 0 V
10
-3
10
-4
10
TJ = 125 oC
-5
10
-6
10
-7
10
-8
10
TJ = 25 oC
-9
10
-10
0
4
8
12
16
10
30
50
10
1
0.1
0.01
1 ms
THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RJA = 230 oC/W
TA = 25 oC
0.001
0.01
10 ms
100 ms
1s
10 s
DC
0.1
DERIVED FROM
TEST DATA
1
10
100
VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. Gate Leakage Current
vs Gate to Source Voltage
©2012 Fairchild Semiconductor Corporation
FDZ1416NZ Rev.1.6
1
Figure 10. Capacitance vs Source1
to Source2 Voltage
10
-2
Crss
VS1S2, SOURCE1 TO SOURCE2 VOLTAGE (V)
Figure 9. Gate Charge Characteristics
10
0.8
Figure 8. Source1 to Source2 Diode
Forward Voltage vs Source Current
CAPACITANCE (pF)
VG1S1, GATE1 TO SOURCE1 VOLTAGE (V)
0.2
Vfss, BODY DIODE FORWARD VOLTAGE (V)
VGS, GATE TO SOURCE VOLTAGE (V)
Ig, GATE LEAKAGE CURRENT (A)
TJ = 150 oC
Figure 12. Forward Bias Safe
Operating Area
4
www.fairchildsemi.com
FDZ1416NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
P(PK), PEAK TRANSIENT POWER (W)
100
10
1
SINGLE PULSE
RJA = 230 oC/W
TA = 25 oC
0.1
-3
10
-2
-1
10
0
10
1
10
100
10
1000
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
2
NORMALIZED THERMAL
IMPEDANCE, ZJA
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZJA x RJA + TA
SINGLE PULSE
o
RJA = 230 C/W
(Note 1b)
0.001
-3
10
-2
-1
10
0
10
1
10
100
10
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
The following information applies to the WL-CSP package dimensions on the next page:
Pin Definitions:
Pin Name
G1
G2
S1
S2
Position
A2
B2
A1
B1
Product Specific Dimensions:
D
E
X
Y
1.4 mm
1.6 mm
0.475 mm
0.375 mm
©2012 Fairchild Semiconductor Corporation
FDZ1416NZ Rev.1.6
5
www.fairchildsemi.com
FDZ1416NZ Common Drain N-Channel 2.5 V PowerTrench® WL-CSP MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
A
E
0.03 C
E±0.05
2X
Ø0.250
0.65
B
B
B
E
0.65
D±0.05
A
1
A
1
PIN A1
INDEX
AREA
2
TOP VIEW
0.03 C
2X
LAND PATTERN RECOMMENDATION
0.150+0.015
-0.025
0.06 C
0.350MAX
0.05 C
C
0.160±0.025
SEATING PLANE
D
0.65
1
2
A
0.65
2
B
E
X±0.020
BOTTOM VIEW
NOTES:
A. NO JEDEC REGISTRATION APPLIES.
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCE
PER ASME Y14.5M, 1994.
0.005
C A B
D. DATUM C IS DEFINED BY THE SPHERICAL
SOLDER BALL
CROWNS OF THE BALLS.
0.300±0.025
E. FOR DIMENSIONS D,E,X AND Y SEE
(4X)
PRODUCT DATA SHEET.
F. FOR PIN-OUT ASSIGNMENT , REFER TO DATA SHEET.
G. DRAWING NAME: MKT-UC004AJREV2.
E
Y±0.020
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: orderlit@onsemi.com
© Semiconductor Components Industries, LLC
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
www.onsemi.com
1
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com
工商网监
湘ICP备2023018690号
