FDZ197PZ

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20 V, -3.8 A, 64 mΩ Features General Description „ Max rDS(on) = 64 mΩ at VGS = -4.5 V, ID = -2.0 A Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" WLCSP packaging process, the FDZ197PZ minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on). „ Max rDS(on) = 71 mΩ at VGS = -2.5 V, ID = -2.0 A „ Max rDS(on) = 79 mΩ at VGS = -1.8 V, ID = -1.0 A „ Max rDS(on) = 95 mΩ at VGS = -1.5 V, ID = -1.0 A „ Occupies only 1.5 mm2 of PCB area.Less than 50% of the area of 2 x 2 BGA Applications „ Ultra-thin package: less than 0.65 mm height when mounted to PCB „ Battery management „ Load switch „ HBM ESD protection level > 4400V (Note3) „ Battery protection „ RoHS Compliant PIN1 S S G S D D TOP BOTTOM WL-CSP 1x1.5 Thin MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage -Continuous ID TA = 25°C (Note 1a) -Pulsed PD TJ, TSTG Ratings -20 Units V ±8 V -3.8 -15 Power Dissipation TA = 25°C (Note 1a) 1.9 Power Dissipation TA = 25°C (Note 1b) 0.9 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 65 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 133 °C/W Package Marking and Ordering Information Device Marking 7 Device FDZ197PZ ©2009 Fairchild Semiconductor Corporation FDZ197PZ Rev.C3 Package WL-CSP 1x1.5 Thin 1 Reel Size 7” Tape Width 8 mm Quantity 5000 units www.fairchildsemi.com FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET December 2014 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 µA IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V ±10 µA -1.0 V -20 V -10 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 µA, referenced to 25 °C rDS(on) gFS Static Drain to Source On Resistance Forward Transconductance -0.4 -0.5 2.7 mV/°C VGS = -4.5 V, ID = -2.0 A 46 64 VGS = -2.5 V, ID = -2.0 A 53 71 VGS = -1.8 V, ID = -1.0 A 59 79 VGS = -1.5 V, ID = -1.0 A 68 95 VGS = -4.5 V, ID = -2.0 A, TJ =125 °C 54 84 VDD = -5 V, ID = -3.8 A 21 mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = -10 V, VGS = 0 V, f = 1 MHz 1180 1570 pF 190 255 pF 160 225 pF Switching Characteristics td(on) Turn-On Delay Time 5.8 12 ns tr Rise Time 5.9 12 ns td(off) Turn-Off Delay Time 311 498 ns tf Fall Time 280 448 ns Qg Total Gate Charge 18 25 nC Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge VDD = -10 V, ID = -3.8 A, VGS = -4.5 V, RGEN = 6 Ω VGS = 0V to -4.5V VDD = -10 V, ID = -3.8 A 1.5 nC 4.7 nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -1.1 A (Note 2) IF = -3.8 A, di/dt = 100 A/µs -0.6 -1.2 V 194 310 ns 344 550 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 65 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 133 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. 3. The diode connected between the gate and source serves only as protection ESD. No gate overvoltage rating is implied. ©2009 Fairchild Semiconductor Corporation FDZ197PZ Rev.C3 2 www.fairchildsemi.com FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 12 VGS = -4.5 V VGS = -3 V 9 VGS = -2.5 V VGS = -1.8 V 6 VGS = -1.5 V 3 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0 0 1 2 2.5 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE -ID, DRAIN CURRENT (A) 15 PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 2.0 VGS = -1.5 V VGS = -1.8 V 1.5 VGS = -2.5 V 1.0 VGS = -3 V 0.5 3 0 3 6 -VDS, DRAIN TO SOURCE VOLTAGE (V) 12 15 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.4 150 ID = -2 A VGS = -4.5 V 1.2 SOURCE ON-RESISTANCE (mΩ) ID = -2 A PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 120 rDS(on), DRAIN TO NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 9 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics 1.0 0.8 0.6 -75 -50 -IS, REVERSE DRAIN CURRENT (A) 12 VDS = -5 V 9 6 TJ = 25 oC 3 TJ = 0.5 1.0 -55 oC 1.5 60 TJ = 25 oC 1.5 2.0 2.5 3.0 3.5 4.0 20 10 VGS = 0 V 1 TJ = 150 oC 0.1 TJ = 25 oC 0.01 TJ = -55 oC 0.001 0.0 2.0 0.2 0.4 0.6 0.8 1.0 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current ©2009 Fairchild Semiconductor Corporation FDZ197PZ Rev.C3 4.5 Figure 4. On-Resistance vs Gate to Source Voltage PULSE DURATION = 80 µs DUTY CYCLE = 0.5% MAX 0 0.0 TJ = 125 oC -VGS, GATE TO SOURCE VOLTAGE (V) 15 TJ = 150 oC 90 30 1.0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) Figure 3. Normalized On- Resistance vs Junction Temperature -ID, DRAIN CURRENT (A) VGS = -4.5 V 3 1.2 www.fairchildsemi.com FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted ID = -3.8 A VDD = -8 V CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE (V) 3000 4.5 3.0 VDD = -10 V VDD = -12 V 1.5 1000 Ciss Coss f = 1 MHz VGS = 0 V 0.0 0 3 6 9 12 15 Crss 100 0.1 18 1 10 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 20 10 100 µs TJ = -ID, DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT (A) 10 25 oC 1 TJ = 125 oC 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 0.1 DC RθJA = 133 oC/W o TA = 25 C 0.1 0.01 0.1 1 10 100 0.01 0.1 1000 1 tAV, TIME IN AVALANCHE (ms) -2 P(PK), PEAK TRANSIENT POWER (W) VGS = 0 V 10 -4 10 -5 10 TJ = 125 oC -6 10 -7 10 TJ = 25 oC -8 10 0 3 6 9 12 15 SINGLE PULSE RθJA = 133 oC/W TA = 25 oC 10 1 -3 10 -2 10 -1 10 1 10 100 1000 t, PULSE WIDTH (sec) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 11. Gate Leakage Current vs Gate to Source Voltage ©2009 Fairchild Semiconductor Corporation FDZ197PZ Rev.C3 200 100 0.5 -4 10 -9 10 50 Figure 10. Forward Bias Safe Operating Area 10 -3 10 -VDS, DRAIN to SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability -Ig, GATE LEAKAGE CURRENT (A) 100 ms 1s SINGLE PULSE TJ = MAX RATED Figure 12. Single Pulse Maximum Power Dissipation 4 www.fairchildsemi.com FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA o RθJA = 133 C/W 0.01 0.005 -4 10 -3 10 -2 10 -1 10 1 10 100 1000 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation FDZ197PZ Rev.C3 5 www.fairchildsemi.com FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDZ197PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET Dimensional Outline and Pad Layout Pin Definations: Gate Drain Source A1 C1, C2 A2, B1, B2 Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild's worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_UCBAU-006 ©2009 Fairchild Semiconductor Corporation FDZ197PZ Rev.C3 ６ www.fairchildsemi.com AccuPower AttitudeEngine™ Awinda® AX-CAP®* BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED® Dual Cool™ EcoSPARK® EfficientMax ESBC ® ® Fairchild Fairchild Semiconductor® FACT Quiet Series FACT® FAST® FastvCore FETBench FPS OPTOPLANAR® F-PFS FRFET® SM Global Power Resource GreenBridge Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and Better™ MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax MotionGrid® MTi® MTx® MVN® mWSaver® OptoHiT OPTOLOGIC® ® PowerTrench® PowerXS™ Programmable Active Droop QFET® QS Quiet Series RapidConfigure  Saving our world, 1mW/W/kW at a time™ SignalWise SmartMax SMART START Solutions for Your Success SPM® STEALTH SuperFET® SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS® SyncFET Sync-Lock™ ®* ® TinyBoost TinyBuck® TinyCalc TinyLogic® TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT®* μSerDes UHC® Ultra FRFET UniFET VCX VisualMax VoltagePlus XS™ Xsens™ 仙童™ * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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