FDZ206P

FDZ206P P-Channel 2.5V Specified PowerTrench  BGA MOSFET General Description Features Combining Fairchild’s advanced 2.5V specified PowerTrench process with state of the art BGA packaging, the FDZ206P minimizes both PCB space and rDS(on). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultralow profile packaging, low gate charge, and low rDS(on). • –13 A, –20 V. rDS(on) = 9.5 mΩ @ VGS = –4.5 V rDS(on) = 14.5 mΩ @ VGS = –2.5 V • Occupies only 14 mm2 of PCB area. Only 42% of the area of SO-8 • Ultra-thin package: less than 0.80 mm height when mounted to PCB Applications • 0.65 mm ball pitch • Battery management • 3.5 x 4 mm2 footprint • Load switch • High power and current handling capability • Battery protection S Gate G Index slot D Top Bottom Absolute Maximum Ratings Symbol VDSS VGS ID PD TJ, TSTG TA=25oC unless otherwise noted Parameter Ratings Units Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range –20 ±12 –13 –60 2.2 –55 to +150 V V A W °C Thermal Characteristics RθJA RθJB RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (Note 1) 56 4.5 0.6 °C/W Package Marking and Ordering Information Device Marking 206P 2006 Fairchild Semiconductor Corporation Device FDZ206P Reel Size 13” Tape width 12mm Quantity 4000 FDZ206P Rev. E (W) FDZ206P P-Channel 2.5V Specified PowerTrench BGA MOSFET February 2006 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Forward Leakage Gate–Body Reverse Leakage On Characteristics VDS = –16 V, VGS = –12 V, VGS = 12 V, –20 V mV/°C –13 VGS = 0 V VDS = 0 V VDS = 0 V –1 –100 100 µA nA nA –0.9 3.3 –1.5 V mV/°C 7 10 9 9.5 14.5 13 mΩ (Note 2) VGS(th) ∆VGS(th) ∆TJ rDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) gFS On–State Drain Current Forward Transconductance VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C Dynamic Characteristics Ciss Coss Crss VGS = 0 V, ID = –250 µA ID = –250 µA, Referenced to 25°C Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = – 4.5 V, ID = –13 A VGS = –2.5 V, ID = –10.5 A VGS = –4.5 V, ID = –13 A, TJ=125°C VGS = –4.5 V, VDS = –5 V VDS = –5 V, ID = –13 A –0.6 –60 58 A S pF pF pF VDS = –10 V, f = 1.0 MHz V GS = 0 V, 4280 873 400 VDD = –10 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω VDS = –10 V, VGS = –4.5 V ID = –13 A, 17 11 115 60 38 7 10 Switching Characteristics (Note 2) td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge 31 20 184 96 53 ns ns ns ns nC nC nC –1.8 –1.2 A V Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –1.8 A Voltage Diode Reverse Recovery Time IF = –13A, Diode Reverse Recovery Charge diF/dt = 100 A/µs –0.7 (Note 2) 34 nS 38 nC Notes: 1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user' s board design. a) 56°C/W when mounted on a 1in2 pad of 2 oz copper b) 119°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDZ206P Rev. E (W) FDZ206P P-Channel 2.5V Specified PowerTrench BGA MOSFET Electrical Characteristics FDZ206P P-Channel 2.5V Specified PowerTrench BGA MOSFET Dimensional Outline and Pad Layout FDZ206P Rev. E (W) 60 VGS =-4.5V 1.8 NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.0V -ID, DRAIN CURRENT (A) 50 -3.5V -2.5V 40 -2.0V 30 20 10 0 0 0.5 1 1.5 VGS = -2.5V 1.6 1.4 -3.0V 1.2 -4.0V -4.5V 1 0.8 2 0 -VDS, DRAIN-SOURCE VOLTAGE (V) 10 30 40 50 60 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.03 1.4 ID = -6.5 A 1.3 rDS(on), ON-RESISTANCE (OHM) ID = -13A VGS = -4.5V 1.2 1.1 1 0.9 0.025 0.02 TA = 125oC 0.015 0.01 TA = 25oC 0.005 0.8 -50 -25 0 25 50 75 100 125 1 150 2 3 4 Figure 3. On-Resistance Variation with Temperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 60 100 o TA = -55 C 50 o 25 C -IS, REVERSE DRAIN CURRENT (A) VDS = -5V 5 -VGS, GATE TO SOURCE VOLTAGE (V) o TJ, JUNCTION TEMPERATURE ( C) -ID, DRAIN CURRENT (A) 20 -ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. rDS(on), NORMALIZED DRAIN-SOURCE ON-RESISTANCE -3.5V o 125 C 40 30 20 10 VGS = 0V 10 o TA = 125 C 1 o 25 C 0.1 o -55 C 0.01 0.001 0.0001 0 0.5 1 1.5 2 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 2.5 0 0.2 0.4 0.6 0.8 1 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ206P Rev. E (W) FDZ206P P-Channel 2.5V Specified PowerTrench BGA MOSFET Typical Characteristics 5000 ID = -13A VDS = -5V -10V 4500 4 3 2 1 3500 3000 2500 2000 1500 Crss 500 0 10 20 30 40 0 50 0 Qg, GATE CHARGE (nC) 100 100ms 1s 10s 1 0.1 DC VGS = -4.5V SINGLE PULSE RθJA = 119oC/W TA = 25oC 0.01 0.01 1 20 10 SINGLE PULSE RθJA = 119°C/W TA = 25°C 40 30 20 10 0 0.01 0.1 15 50 1ms P(pk), PEAK TRANSIENT POWER (W) 10 10 Figure 8. Capacitance Characteristics. 10ms rDS(on) LIMIT 5 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 0.1 1 100 10 100 1000 t1, TIME (sec) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE -ID, DRAIN CURRENT (A) Coss 1000 0 f = 1MHz VGS = 0 V Ciss 4000 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 119 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ206P Rev. E (W) FDZ206P P-Channel 2.5V Specified PowerTrench BGA MOSFET Typical Characteristics