FDZ209N
60V N-Channel PowerTrench BGA MOSFET
General Description
Features
Combining Fairchild’s advanced PowerTrench process
with state-of-the-art BGA packaging, the FDZ209N
minimizes both PCB space and RDS(ON). This BGA
MOSFET embodies a breakthrough in packaging
technology which enables the device to combine
excellent thermal transfer characteristics, high current
handling capability, ultra-low profile packaging, low gate
charge, and low RDS(ON).
• 4 A, 60 V.
RDS(ON) = 80 mΩ @ VGS = 5 V
• Occupies only 5 mm2 of PCB area: only 55% of the
area of SSOT-6
• Ultra-thin package: less than 0.80 mm height when
mounted to PCB
Applications
• Outstanding thermal transfer characteristics:
4 times better than SSOT-6
• Solenoid Drivers
• Ultra-low Qg x RDS(ON) figure-of-merit
• High power and current handling capability
Index
slot
D
D
D
S
S
S
G
S
S
D
D
D
D
Index
slot
G
Top
Bottom
Absolute Maximum Ratings
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
S
TA=25oC unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJB
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ball
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
Package Marking and Ordering Information
Device Marking
209N
2004 Fairchild Semiconductor Corporation
Device
FDZ209N
Reel Size
7’’
Ratings
60
±20
4
20
2
–55 to +150
64
8
0.7
Tape width
8mm
Units
V
V
A
W
°C
°C/W
Quantity
3000 units
FDZ209N Rev B2 (W)
FDZ209N
May 2004
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
Drain-Source Avalanche Ratings (Note 2)
WDSS
Drain-Source Avalanche Energy
Single Pulse,
IAR
Drain-Source Avalanche Current
ID= 4 A
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
IGSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage.
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
gFS
VDD = 30 V,
VGS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
90
mJ
4
A
60
V
mV/°C
59
1
±100
µA
nA
2.5
–6
3
V
mV/°C
VGS = 5 V,
ID = 4 A
VGS = 5 V, ID = 4 A, TJ=125°C
VDS = 5 V,
ID = 4 A
60
91
12
80
130
mΩ
VDS = 30 V,
f = 1.0 MHz
657
pF
76
pF
32
pF
Ω
VDS = 48 V,
VGS = ±20 V,
VGS = 0 V
VDS = 0 V
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
Forward Transconductance
VDS = VGS,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
1
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
V GS = 0 V,
VGS = 15 mV,
f = 1.0 MHz
1.5
VDD = 30 V,
VGS = 5 V,
ID = 1 A,
RGEN = 6 Ω
18
32
4
8
ns
15
27
ns
(Note 2)
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
8
16
ns
Qg
Total Gate Charge
6.3
9
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = 30 V,
VGS = 5 V
ID = 4 A,
2.5
nC
2.5
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
trr
Qrr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
VGS = 0 V, IS = 1.7 A
Voltage
Diode Reverse Recovery Time
IF = 4A
diF/dt = 100 A/µs
Diode Reverse Recovery Charge
0.77
(Note 2)
(Note 2)
ns
1.7
1.2
A
V
27
nS
45
nC
Notes:
1.
RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user'
s board design.
a)
64°C/W when
mounted on a 1in2 pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
b)
128°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDZ209N Rev B2 (W)
FDZ209N
Electrical Characteristics
FDZ209N
Dimensional Outline and Pad Layout
FDZ209N Rev B2 (W)
FDZ209N
Typical Characteristics
1.8
VGS = 5.0V
4.8V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
20
4.5V
15
4.3V
10
4.0V
5
3.8V
1.6
VGS = 4.0V
1.4
4.3V
1.2
1
0.8
0
0
1
2
3
4
5
6
0
7
5
Figure 1. On-Region Characteristics.
15
20
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.35
1.8
ID =2A
ID = 4A
VGS = 5.0V
1.6
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
10
ID, DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
1.4
1.2
1
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
0.3
0.25
0.2
0.15
TA = 125oC
0.1
TA = 25oC
0.05
0
150
3
o
TJ, JUNCTION TEMPERATURE ( C)
3.5
100
25 C
TA = -55 C
15
IS, REVERSE DRAIN CURRENT (A)
o
o
4.5
5
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
20
VDS = 5V
4
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
ID, DRAIN CURRENT (A)
5.0V
4.8V
4.5V
o
125 C
10
5
VGS = 0V
10
TA = 125oC
1
0.1
25oC
0.01
-55oC
0.001
0.0001
0
2
2.5
3
3.5
4
4.5
5
5.5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDZ209N Rev B2 (W)
FDZ209N
Typical Characteristics
ID = 4A
VDS = 20V
1000
30V
800
40V
5
4
3
2
CISS
600
400
COSS
200
1
CRSS
0
0
2
4
6
8
0
10
0
Qg, GATE CHARGE (nC)
10
20
30
40
50
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
50
100
P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT
1ms
10
10ms
100ms
1
DC
VGS = 5.0V
SINGLE PULSE
RθJA = 128oC/W
0.1
1s
10s
TA = 25oC
0.01
0.1
1
10
SINGLE PULSE
RθJA = 128°C/W
TA = 25°C
40
30
20
10
0
0.01
100
0.1
1
VDS, DRAIN-SOURCE VOLTAGE (V)
10
100
1000
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
ID, DRAIN CURRENT (A)
f = 1MHz
VGS = 0 V
6
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
7
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
RθJA = 128 °C/W
0.2
0.1
0.1
P(pk)
0.05
t1
0.02
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
SINGLE PULSE
0.001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ209N Rev B2 (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I11
