FDZ2553NZ
Monolithic Common Drain N-Channel 2.5V Specified PowerTrench BGA MOSFET
General Description
Features
Combining Fairchild’s advanced 2.5V specified
PowerTrench process with state-of-the-art BGA
packaging, the FDZ2553N minimizes both PCB space
and RDS(ON).
This common drain BGA MOSFET
embodies a breakthrough in packaging technology
which enables the device to combine excellent thermal
transfer characteristics, high current handling capability,
ultra-low profile packaging, low gate charge, and low
RDS(ON).
• 9.6 A, 20 V.
RDS(ON) = 14 mΩ @ V GS = 4.5 V
RDS(ON) = 20 mΩ @ V GS = 2.5 V
• Occupies only 0.10 cm2 of PCB area:
1/3 the area of SO-8.
• Ultra-thin package: less than 0.70 mm height when
mounted to PCB.
Applications
• ESD protection diode (note 3)
• Battery management
• Outstanding thermal transfer characteristics:
significantly better than SO-8.
• Load switch
• Ultra-low Qg x RDS(ON) figure-of-merit
• Battery protection
• High power and current handling capability
D
D
D
S
S
S
G
S
S
Pin 1
Q2
S
S
S
G
S
S
D
D
D
Q1
Pin 1
Top
Bottom
Absolute Maximum Ratings
Symbol
V DSS
V GSS
ID
PD
TJ , TSTG
T A=25oC unless other wise noted
Parameter
Ratings
Units
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
(Note 1a)
– Pulsed
Power Dissipation (Steady State)
(Note 1a)
Operating and Storage Junction Temperature Range
20
±12
9.6
20
2.1
–55 to +150
V
V
A
W
°C
Thermal Characteristics
RθJA
RθJB
RθJ C
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ball
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
(Note 1)
60
6.3
0.6
°C/W
Package Marking and Ordering Information
Device Marking
2553NZ
2003 Fairchild Semiconductor Corporation
Device
FDZ2553NZ
Reel Size
7’’
Tape width
12mm
Quantity
3000 units
FDZ2553NZ Rev C (W)
FDZ2553NZ
July 2003
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
V GS = 0 V,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
20
Typ Max Units
Off Characteristics
BV DSS
∆BV DSS
∆TJ
IDSS
IGSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
On Characteristics
V DS = 16 V,
V GS = ±12 V,
V
mV/°C
12
1
±10
µA
µA
0.9
–0.3
1.5
V
mV/°C
12
16
16
20
45
14
20
24
mΩ
V GS = 0 V
V DS = 0 V
(Note 2)
V GS(th)
∆V GS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
gFS
On–State Drain Current
Forward Transconductance
V DS = V GS ,
ID = 250 µA
ID = 250 µA, Referenced to 25°C
V GS = 4.5 V,
ID = 9.6 A
V GS = 2.5 V,
ID = 7.9 A
V GS = 4.5 V, ID = 9.6 A, TJ =125°C
V GS = 4.5 V,
V DS = 5 V
V DS = 5 V,
ID = 9.6 A
0.6
10
A
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
RG
Gate Resistance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
Turn–Off Delay Time
tf
Turn–Off Fall Time
Qg
Total Gate Charge
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
1240
pF
320
pF
170
pF
V GS = 15 mV, f = 1.0 MHz
2.1
Ω
V DD = 10 V,
V GS = 4.5 V,
10
20
ns
14
26
ns
26
42
ns
11
19
ns
13
18
nC
V DS = 10 V,
f = 1.0 MHz
V GS = 0 V,
(Note 2)
V DS = 10 V,
V GS = 5 V
ID = 1 A,
RGEN = 6 Ω
ID = 9.6 A,
3
nC
3
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
V SD
trr
Qrr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V GS = 0 V, IS = 1.7 A
Voltage
Diode Reverse Recovery Time
IF = 9.6A,
diF/dt = 100 A/µs
Diode Reverse Recovery Charge
(Note 2)
0.7
1.7
1.2
A
V
20
nS
6
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the sol der ball, RθJB, is defined for reference. For RθJC , the thermal reference point for the case is defined as the top surface of the
copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user's board design.
(a). RθJA = 60°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB
(b). RθJA = 108°C/W when mounted on a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
FDZ2553NZ Rev C (W)
FDZ2553NZ
Electrical Characteristics
FDZ2553NZ
Dimensional Outline and Pad Layout
FDZ2553NZ Rev C (W)
FDZ2553NZ
Typical Characteristics
20
2
2.0V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
ID, DRAIN CURRENT (A)
VGS =4.5V
16
3.5V
2.5V
12
8
4
1.5V
VGS = 2.5V
1.75
1.5
3.0V
3.5V
4.0V
1.25
4.5V
1
0
0
0.5
1
1.5
0
2
4
Figure 1. On-Region Characteristics.
16
20
0.035
ID = 9.6A
VGS = 10V
RDS(ON) , ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
12
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
1.4
1.2
1
0.8
0.6
-50
ID =4.8 A
0.025
o
TA = 125 C
0.015
o
T A = 25 C
0.005
-25
0
25
50
75
100
125
150
0
2
o
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
TJ , JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
20
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
ID, DRAIN CURRENT (A)
8
ID , DRAIN CURRENT (A)
VDS, DRAIN-SOURCE VOLTAGE (V)
16
o
TA = 125 C
12
8
o
25 C
o
-55 C
4
0
0.5
10
1
o
T A = 125 C
0.1
o
25 C
0.01
o
-55 C
0.001
0.0001
1
1.5
2
VGS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDZ2553NZ Rev C (W)
FDZ2553NZ
Typical Characteristics
10
1800
8
f = 1MHz
VGS = 0 V
VDS = 5V
6
CAPACITANCE (pF)
VGS, GATE-SOURCE VOLTAGE (V)
ID = 9.6A
10V
15V
4
1200
Ciss
600
Coss
2
Crss
0
0
0
5
10
15
20
25
0
5
Q g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
20
P(pk), PEAK TRANSIENT POWER (W)
50
RDS(ON) LIMIT
ID, DRAIN CURRENT (A)
15
Figure 8. Capacitance Characteristics.
100
1ms
10ms
10
100ms
1s
10s
1
DC
VGS = 4.5V
SINGLE PULSE
o
RθJ A = 108 C/W
0.1
o
TA = 25 C
SINGLE PULSE
RθJA = 108°C/W
T A = 25°C
40
30
20
10
0
0.01
0.01
0.1
1
10
100
0.01
0.1
1
10
100
1000
t1 , TIME (sec)
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
10
VD S, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA (t) = r(t) * RθJA
RθJA = 108 °C/W
0.2
0.1
0.1
P(pk)
0.05
t1
0.02
0.01
t2
0.01
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDZ2553NZ Rev C (W)
TRADEMARKS
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not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
2. A critical component is any component of a life
1. Life support devices or systems are devices or
support device or system whose failure to perform can
systems which, (a) are intended for surgical implant into
be reasonably expected to cause the failure of the life
the body, or (b) support or sustain life, or (c) whose
support device or system, or to affect its safety or
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I3
