FDZ391P

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This literature is subject to all applicable copyright laws and is not for resale in any manner. FDZ391P P-Channel 1.5 V PowerTrench® Thin WL-CSP MOSFET -20 V, -3 A, 85 mΩ Features tm General Description „ Max rDS(on) = 85 mΩ at VGS = -4.5 V, ID = -1 A Designed on Fairchild's advanced 1.5 V PowerTrench process with state of the art "low pitch" Thin WLCSP packaging process, the FDZ391P minimizes both PCB space and rDS(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile packaging, low gate charge, and low rDS(on). „ Max rDS(on) = 123 mΩ at VGS = -2.5 V, ID = -1 A „ Max rDS(on) = 200 mΩ at VGS = -1.5 V, ID = -1 A „ Occupies only 1.5 mm2 of PCB area „ Ultra-thin package: less than 0.4 mm height when mounted to PCB Applications „ RoHS Compliant „ Battery management „ Load switch „ Battery protection Pin 1 S S S D G G S D D TOP BOTTOM MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current ID -Continuous TA = 25 °C (Note 1a) -Pulsed PD TJ, TSTG Ratings -20 Units V ±8 V -3 -15 Power Dissipation TA = 25 °C (Note 1a) 1.9 Power Dissipation TA = 25 °C (Note 1b) 0.9 Operating and Storage Junction Temperature Range -55 to +150 A W °C Thermal Characteristics RθJA Thermal Resistance, Junction to Ambient (Note 1a) 65 RθJA Thermal Resistance, Junction to Ambient (Note 1b) 133 °C/W Package Marking and Ordering Information Device Marking 6 Device FDZ391P ©2008 Fairchild Semiconductor Corporation FDZ391P Rev.B1 Package WL-CSP Thin 1 Reel Size 7 ’’ Tape Width 8 mm Quantity 5000 units www.fairchildsemi.com FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET November 2008 Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = -250 µA, VGS = 0 V ∆BVDSS ∆TJ Breakdown Voltage Temperature Coefficient ID = -250 µA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V IGSS Gate to Source Leakage Current VGS = ±8 V, VDS = 0 V -20 V -12 mV/°C -1 µA ±100 nA -1.5 V On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250 µA ∆VGS(th) ∆TJ Gate to Source Threshold Voltage Temperature Coefficient ID = -250 µA, referenced to 25 °C -0.4 -0.6 2 mV/°C VGS = -4.5 V, ID = -1 A 74 85 VGS = -2.5 V, ID = -1 A 90 123 VGS = -1.5 V, ID = -1 A 140 200 100 123 rDS(on) Drain to Source On Resistance ID(on) On to State Drain Current VGS = -4.5 V, VDS = - 5 V gFS Forward Transconductance VDS = -5 V, ID = -1 A VGS = -4.5 V, ID = -1 A TJ = 125 °C mΩ -10 A 7 S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = -10 V, VGS = 0 V, f = 1 MHz 800 1065 pF 155 205 pF 90 135 pF Ω f = 1 MHz 9 11 20 ns VDD = -10 V, ID = -1 A VGS = -4.5 V, RGEN = 6 Ω 10 20 ns 50 80 ns 30 48 ns 9 13 nC Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg Total Gate Charge Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VGS = -4.5 V VDD = -10 V ID = -1 A 1 nC 2 nC Drain-Source Diode Characteristics IS Maximum continuous Drain-Source Diode Forward Current VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = -1.1 A -1.1 (Note 2) IF = -1 A, di/dt = 100 A/µs -0.7 A -1.2 V 21 ns 5 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. a. 65 °C/W when mounted on a 1 in2 pad of 2 oz copper. b. 133 °C/W when mounted on a minimum pad of 2 oz copper. 2. Pulse Test: Pulse Width < 300µs, Duty cycle < 2.0%. FDZ391P Rev.B1 2 www.fairchildsemi.com FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET Electrical Characteristics TJ = 25 °C unless otherwise noted 2.0 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 16 -ID, DRAIN CURRENT (A) 14 VGS = -2.0 V 12 VGS = -4.5 V 10 VGS = -3.5 V 8 VGS = -2.5 V 6 4 VGS = -1.5 V PULSE DURATION = 300 µs DUTY CYCLE = 2.0% MAX 2 0 0 0.5 VGS = -2.5 V 1.4 1.0 VGS = -4.5 V 0.8 0 2 4 6 8 10 -ID, DRAIN CURRENT(A) 12 14 16 Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 240 1.5 ID = -1 A VGS = -4.5 V 1.4 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE VGS = -3.5 V 1.2 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -VDS, DRAIN TO SOURCE VOLTAGE (V) 1.3 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 Figure 3. Normalized On Resistance vs Junction Temperature IS, REVERSE DRAIN CURRENT (A) PULSE DURATION = 300 µs DUTY CYCLE = 2.0% MAX 12 VDD = -5 V 9 6 TJ = 125 oC TJ = 25 oC 3 TJ = -55 oC 0 0.5 ID = - 0.5 A PULSE DURATION = 300 µs DUTY CYCLE = 2.0% MAX 200 160 120 TJ = 125 oC 80 TJ = 25 oC 40 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 5 Figure 4. On-Resistance vs Gate to Source Voltage 15 -ID, DRAIN CURRENT (A) PULSE DURATION = 300 µs DUTY CYCLE = 2.0% MAX VGS = -2.0 V 1.6 Figure 1. On Region Characteristics 60 VGS = 0 V 10 1 TJ = 125 oC 0.1 TJ = 25 oC 0.01 TJ = -55 oC 0.001 0.0001 1.0 1.5 2.0 -VGS, GATE TO SOURCE VOLTAGE (V) 0 2.5 Figure 5. Transfer Characteristics FDZ391P Rev.B1 VGS = -1.5 V 1.8 0.2 0.4 0.6 0.8 1.0 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 6. Source to Drain Diode Forward Voltage vs Source Current 3 www.fairchildsemi.com FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2000 ID = -1 A 1000 4 VDD = -5 V 3 CAPACITANCE (pF) -VGS, GATE TO SOURCE VOLTAGE(V) 5 VDD = -10 V 2 VDD = -15 V 1 2 4 6 8 10 Coss 100 f = 1 MHz VGS = 0 V 50 0.1 0 0 Ciss 12 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE(nC) Figure 7. Gate Charge Characteristics -IS, SOURCE1 TO SOURCE2 CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -4.5 V 2 VGS = - 2.5 V 1 o RθJA = 65 C/W 0 25 50 75 100 125 20 Figure 8. Capacitance vs Drain to Source Voltage 4 3 Crss 150 o TA, CASE TEMPERATURE ( C) 30 10 100 us 1 ms 1 10 ms THIS AREA IS LIMITED BY rDS(on) 100 ms 1s SINGLE PULSE TJ = MAX RATED 0.1 10 s DC RθJA = 133 oC/W o TA = 25 C 0.01 0.1 1 60 10 -VS, SOURCE1 TO SOURCE2 VOLTAGE (V) Figure 9. Maximum Continuous Drain Current vs Ambient Temperature Figure 10. Forward Bias Safe Operating Area P(PK), PEAK TRANSIENT POWER (W) 50 10 VGS = -10 V SINGLE PULSE RθJA = 133 oC/W o TA = 25 C 1 0.5 -3 10 -2 10 -1 10 1 t, PULSE WIDTH (sec) 10 100 1000 Figure 11. Single Pulse Maximum Power Dissipation FDZ391P Rev.B1 4 www.fairchildsemi.com FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted 2 NORMALIZED THERMAL IMPEDANCE, ZθJA 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJA x RθJA + TA SINGLE PULSE o RθJA = 133 C/W 0.01 -3 10 -2 10 -1 10 1 10 t, RECTANGULAR PULSE DURATION (sec) 100 1000 Figure 12. Transient Thermal Response Curve FDZ391P Rev.B1 5 www.fairchildsemi.com FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET Typical Characteristics TJ = 25 °C unless otherwise noted FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET Dimensional Outline and Pad Layout FDZ391P Rev.B1 6 www.fairchildsemi.com FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ ™ TinyPower™ Saving our world, 1mW /W /kW at a time™ TinyPWM™ SmartMax™ TinyWire™ SMART START™ µSerDes™ SPM® STEALTH™ SuperFET™ UHC® SuperSOT™-3 Ultra FRFET™ SuperSOT™-6 UniFET™ SuperSOT™-8 VCX™ SupreMOS™ VisualMax™ SyncFET™ XS™ ® ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 FDZ391P Rev.B1 7 www.fairchildsemi.com FDZ391P P-Channel 1.5V PowerTrench® WL-CSP MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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