FDZ7296

FDZ7296 tm 30V N-Channel PowerTrench BGA MOSFET General Description Features Combining Fairchild’s advanced PowerTrench process with state-of-the-art BGA packaging, the FDZ7296 minimizes both PCB space and RDS(ON). This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). 11 A, 30 V. RDS(ON) = 12 mΩ @ VGS = 4.5 V Applications • High-side Mosfet in DC-DC converters for Server and Notebook applications • RoHS Compliant RDS(ON) = 8.5 mΩ @ VGS = 10 V 2 • Occupies only 0.10 cm of PCB area: 1/3 the area of SO-8. • Ultra-thin package: less than 0.80 mm height when mounted to PCB. • High performance trench technology for extremely low RDS(ON) • Optimized for low Qg and Qgd to enable fast switching and reduce CdV/dt gate coupling D Index slot G S Bottom BGA 2.5X4.0 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Top o TA=25 C unless otherwise noted Parameter Ratings Units Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous (Note 1a) – Pulsed Power Dissipation (Steady State) (Note 1a) Operating and Storage Junction Temperature Range 30 ±20 11 20 2.1 –55 to +150 V V A Thermal Characteristics RθJA RθJB RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ball Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) (Note 1) Package Marking and Ordering Information Device Marking 7296 2007 Fairchild Semiconductor Corporation Device FDZ7296 Reel Size 7’’ 60 6.3 0.6 Tape width 8mm W °C °C/W Quantity 3000 units FDZ7296 Rev C1 (W) FDZ7296 30V N-Channel PowerTrench BGA MOSFET July 2007 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS IGSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage. On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) VGS = 0 V, ID = 250 µA ID = 250 µA, Referenced to 25°C VDS = 24 V, VGS = ±20 V, 30 V mV/°C 27 VGS = 0 V VDS = 0 V 1 ±100 µA nA 1.8 –4.9 3 V mV/°C 7 9 9.1 8.5 12 13 mΩ (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance VDS = VGS, ID = 250 µA ID = 250 µA, Referenced to 25°C VGS = 10 V, ID = 11 A VGS = 4.5V, ID = 10 A VGS = 10 V, ID = 11 A, TJ=125°C Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss gFS Reverse Transfer Capacitance Forward Transconductance RG Gate Resistance Switching Characteristics 1 V GS = 0 V, 1520 420 pF VDS = 5 V, ID = 11 A 130 46 pF S VGS = 15 mV, f = 1.0 MHz 1.1 Ω VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 Ω 10 20 4 8 ns ns VDS = 15 V, f = 1.0 MHz pF (Note 2) td(on) Turn–On Delay Time tr Turn–On Rise Time td(off) Turn–Off Delay Time 27 43 tf Turn–Off Fall Time 13 23 ns Qg(TOT) Total Gate Charge at Vgs=10V 22 31 nC Qg Total Gate Charge at Vgs=5V 12 17 nC Qgs Gate–Source Charge 4.5 nC Qgd Gate–Drain Charge 3.1 nC VDD = 15 V, ID = 11 A, ns Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Qrr Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = 1.7 A Voltage Diode Reverse Recovery Time IF = 11A diF/dt = 100 A/µs Diode Reverse Recovery Charge 1.7 1.2 A V (Note 2) 0.7 28 nS (Note 2) 18 nC Notes: 1. RθJA is determined with the device mounted on a 1 in² 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board side of the solder ball, RθJB, is defined for reference. For RθJC, the thermal reference point for the case is defined as the top surface of the s board design. copper chip carrier. RθJC and RθJB are guaranteed by design while RθJA is determined by the user' a) 60°C/W when mounted on a 1in2 pad of 2 oz copper, 1.5” x 1.5” x 0.062” thick PCB b) 108°C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% FDZ7296 Rev C1 (W) FDZ7296 30V N-Channel PowerTrench BGA MOSFET Electrical Characteristics FDZ7296 30V N-Channel PowerTrench BGA MOSFET Dimensional Outline and Pad Layout FDZ7296 Rev C1 (W) 4 ID, DRAIN CURRENT (A) 6.0V 4.0V 15 4.5V 3.0V 10 5 2.5V 0 0 0.5 1 VDS, DRAIN-SOURCE VOLTAGE (V) 2 3.5V 4.0V 4.5V 6.0V 1 10.0V 0 5 10 ID, DRAIN CURRENT (A) 15 20 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.025 1.6 ID = 11A VGS = 10V RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 3 0 1.5 Figure 1. On-Region Characteristics. 1.4 1.2 1 0.8 0.6 ID =5.5 A 0.02 0.015 TA = 125oC 0.01 TA = 25oC 0.005 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE (oC) 125 150 2 Figure 3. On-Resistance Variation with Temperature. 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 20 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) VGS = 3.0V 3.5V VGS = 10.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 20 15 o TA = 125 C 10 o 25 C o -55 C 5 VGS = 0V 10 TA = 125oC 1 25oC 0.1 0.01 -55oC 0.001 0.0001 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 3.5 Figure 5. Transfer Characteristics. 4 0 0.2 0.4 0.6 0.8 1 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDZ7296 Rev C1 (W) FDZ7296 30V N-Channel PowerTrench BGA MOSFET Typical Characteristics 2000 f = 1MHz VGS = 0 V ID = 11A 8 1600 VDS = 10V CAPACITANCE (pF) VGS, GATE-SOURCE VOLTAGE (V) 10 20V 6 15V 4 Ciss 1200 800 2 400 0 0 Crss 0 5 10 15 Qg, GATE CHARGE (nC) 20 0 25 Figure 7. Gate Charge Characteristics. 5 10 15 VDS, DRAIN TO SOURCE VOLTAGE (V) 20 Figure 8. Capacitance Characteristics. 50 100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT 1ms ID, DRAIN CURRENT (A) Coss 10ms 10 100ms 1s 1 10s DC VGS = 10V SINGLE PULSE o RθJA = 108 C/W 0.1 o TA = 25 C 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 40 30 20 10 0 0.01 0.01 100 Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE SINGLE PULSE RθJA = 108°C/W TA = 25°C 0.1 1 10 t1, TIME (sec) 100 1000 Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA RθJA = 108 /W 0.2 0.1 0.1 P(pk) 0.05 t1 0.02 0.01 0.01 SINGLE PULSE 0.001 0.001 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 0.1 1 10 100 1000 t1 , TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDZ7296 Rev C1 (W) FDZ7296 30V N-Channel PowerTrench BGA MOSFET Typical Characteristics TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx® Build it Now™ CorePLUS™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® Power247® POWEREDGE® Power-SPM™ PowerTrench® Programmable Active Droop™ QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 Green FPS™ Green FPS™ e-Series™ GTO™ i-Lo™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FPS™ FRFET® Global Power ResourceSM ® PDP-SPM™ Power220® SuperSOT™-8 SyncFET™ The Power Franchise® TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ UHC® UniFET™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I30