Ultrafast Rectifiers,
Surface Mount,
10 A, 200 V - 600 V
FES10D, FES10G, FES10J
Features
•
•
•
•
•
•
•
•
•
•
Very Low Profile: Typical Height of 1.1 mm
Ultrafast Recovery Time
Low Forward Voltage Drop
Low Thermal Resistance
Very Stable Operation at Industrial Temperature, 150°C
RoHS Compliant
Green Molding Compound as per IEC61249 Standard
Lead Free in Compliance with EU RoHS 2011/65/EU Directive
With DAP Option Only
Industrial Device Qualified per AEC−Q101 Standards
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3
2
1
TO−277−3LD
CASE 340BQ
* See authorized use policy
MARKING DIAGRAM
MAXIMUM RATINGS
Parameter
Symbol
Repetitive Peak Reverse Voltage
FES10D
FES10G
FES10J
VRRM
Average Forward Rectified Current
IF(AV)
10
A
Peak Forward Surge Current: 8.3 ms
Single Half Sine−Wave Superimposed
on Rated Load
IFSM
150
A
Operating Junction Temperature Range
TJ
−55 to
+175
°C
TSTG
−55 to
+175
°C
Storage Temperature Range
Value
$Y&Z&3
*
Unit
V
200
400
600
$Y
&Z
&3
*
= ON Semiconductor Logo
= Assembly Plant Code
= Date Code (Year & Week)
= Specific Device Code
FES10D, FES10G, FES10J
3
Cathode
Anode 1
Anode 2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2016
April, 2020 − Rev. 4
1
Publication Order Number:
FES10D/D
FES10D, FES10G, FES10J
ORDERING INFORMATION
Part Number
Top Mark
Package
Shipping†
FES10D
FES10D
TO−277 3L (with DAP Option only)
5000 / Tape & Reel
FES10G
FES10G
TO−277 3L (with DAP Option only)
5000 / Tape & Reel
FES10J
FES10J
TO−277 3L (with DAP Option only)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted) (Note 1)
Parameter
Symbol
Value
Unit
Thermal Characteristics, Junction−to−Lead, Thermocouple Soldered to Cathode
YJL
6
°C/W
Thermal Resistance, Junction−to−Ambient
RqJA
100
°C/W
1. Per JESD51−3 Recommended Thermal Test Board.
ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted)
Value
Symbol
Parameter
Conditions
FES10D
FES10G
FES10J
Unit
VF
Maximum Instantaneous Forward
Voltage (Note 2)
IF = 10 A
0.95
1.20
1.80
V
IF = 10 A, TJ = 125°C
0.86
1.00
−
mA
IR
Maximum Reverse Current
at Rated VR
CJ
Typical Junction Capacitance
VR = 4 V, f = 1 MHz
140
pF
Trr
Typical Reverse Recovery Time
IF = 0.5 A, IR = 1 A, IRR = 0.25 A
30
ns
IF = 1 A, di/dt = 50 A/ms, VR = 30 A
40
TJ = 25°C
TJ = 125°C
5
250
500
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse test with PW = 300 ms, 1% duty cycle
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2
FES10D, FES10G, FES10J
TYPICAL CHARACTERISTICS
10
10
FES10G
IF − FORWARD CURRENT (A)
IF − FORWARD CURRENT (A)
FES10D
1
o
TA = −55 C
0.1
o
TA = 25 C
o
TA = 75 C
0.01
o
TA = 125 C
1
o
TA = −55 C
0.1
o
TA = 25 C
o
TA = 75 C
0.01
o
TA = 125 C
o
TA = 150 C
o
TA = 150 C
0.001
0.0
0.2
0.4
0.6
0.8
1.0
0.001
0.0
1.2
0.2
0.4
VF − FORWARD VOLTAGE (V)
0.8
10
1.2
1.4
100
o
IR − LEAKAGE CURRENT (μA)
FES10J
1
o
TA = −55 C
0.1
o
TA = 25 C
o
TA = 75 C
0.01
o
TA = 150 C
o
TA = 125 C
FES10D
TA = 75 C
10
1
0.1
0.01
o
TA = 125 C
0.001
o
o
TA = 150 C
0.0
0.5
o
TA = 25 C
0.001
1.0
1.5
TA = −55 C
1E−4
2.0
0
20
40
VF − FORWARD VOLTAGE (V)
60
80
100
120
140
160
180
200
VR − REVERSE VOLTAGE (V)
Fig 4. Typical Reverse Characteristics for FES10D
Fig 3. Typical Forward Characteristics for FES10J
100
100
IR − LEAKAGE CURRENT (μA)
TA = 125 C
TA = 150 C
o
FES10G
o
o
IR − LEAKAGE CURRENT (μA)
1.0
Fig 2. Typical Forward Characteristics for FES10G
Fig 1. Typical Forward Characteristics for FES10D
IF − FORWARD CURRENT (A)
0.6
VF − FORWARD VOLTAGE (V)
10
1
0.1
0.01
0.001
o
TA = 150 C
FES10J
TA = 125 C
10
1
0.1
0.01
o
0.001
TA = −55 C
TA = 25 C
TA = 75 C
TA = 75 C
o
o
o
o
o
TA = −55 C
1E−4
TA = 25 C
1E−4
0
50
100
150
200
250
300
350
400
0
VR − REVERSE VOLTAGE (V)
50
100 150 200 250 300 350 400 450 500 550 600
VR − REVERSE VOLTAGE (V)
Fig 5. Typical Reverse Characteristics for FES10G
Fig 6. Typical Reverse Characteristics for FES10J
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3
FES10D, FES10G, FES10J
TYPICAL CHARACTERISTICS
1000
CJ − JUNCTION CAPACITANCE (pF)
IF − AVERAGE FORWARD CURRENT (A)
12
TL (Cathode)
11
10
9
8
7
6
5
4
3
TA
2
f=1MHz
100
1
0
0
25
50
75
100
125
150
10
0.1
175
1
o
10
VR − REVERSE BIAS VOLTAGE (V)
TEMPERATURE ( C)
Fig 8. Typical Junction Capacitance
Fig 7. Forward Current Derating Curve
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4
100
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−277−3LD
CASE 340BQ
ISSUE O
DOCUMENT NUMBER:
DESCRIPTION:
98AON13861G
TO−277−3LD
DATE 30 SEP 2016
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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