FES6D

Ultrafast Rectifiers, Surface Mount, 6 A, 200 V - 600 V FES6, NRVFES6 Series Features • • • • • • • • • • www.onsemi.com Very Low Profile: Typical Height of 1.1 mm Ultrafast Recovery Time Low Forward Voltage Drop Low Thermal Resistance Very Stable Operation at Industrial Temperature, 150°C RoHS Compliant Green Molding Compound as per IEC61249 Standard Lead Free in Compliance with EU RoHS 2011/65/EU Directive With DAP Option Only NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable 3 2 1 TO−277−3LD CASE 340BQ Anode 1 3 Cathode Anode 2 MAXIMUM RATINGS Parameter Symbol Repetitive Peak Reverse Voltage Value Unit VRRM FES6D FES6G FES6J V Average Forward Rectified Current IF(AV) 6 A Peak Forward Surge Current: 8.3 ms Single Half Sine−Wave Superimposed on Rated Load IFSM 80 A Operating Junction Temperature Range TJ −55 to +175 °C TSTG −55 to +175 °C Storage Temperature Range MARKING DIAGRAM 200 400 600 $Y&Z&3 * $Y &Z &3 * = ON Semiconductor Logo = Assembly Plant Code = Date Code (Year & Week) = Specific Device Code FES6D, FES6G, FES6J Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION Part Number Package Shipping† TO−277 3L (with DAP Option only) 5000 / Tape & Reel Top Mark FES6D NRVFES6D* FES6D FES6G NRVFES6G* FES6G FES6J NRVFES6J* FES6J †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NRV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. © Semiconductor Components Industries, LLC, 2020 April, 2020 − Rev. 4 1 Publication Order Number: FES6D/D FES6, NRVFES6 Series THERMAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted) (Note 1) Symbol Value Unit Thermal Characteristics, Junction−to−Lead, Thermocouple Soldered to Cathode Parameter YJL 6 °C/W Thermal Resistance, Junction−to−Ambient RqJA 100 °C/W 1. Per JESD51−3 Recommended Thermal Test Board. ELECTRICAL CHARACTERISTICS (Values are at TA = 25°C unless otherwise noted) Value Symbol Parameter Conditions FES6D FES6G FES6J Unit VF Maximum Instantaneous Forward Voltage (Note 2) IF = 6 A 1.05 1.20 2.2 V IF = 6 A, TJ = 125°C 0.90 1.00 1.80 IR Maximum Reverse Current at Rated VR TJ = 25°C TJ = 125°C mA 2 200 500 CJ Typical Junction Capacitance VR = 4 V, f = 1 MHz 60 45 Trr Typical Reverse Recovery Time IF = 0.5 A, IR = 1 A, IRR = 0.25 A 25 IF = 1 A, di/dt = 50 A/ms, VR = 30 V 45 pF ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse test with PW = 300 ms, 1% duty cycle www.onsemi.com 2 FES6, NRVFES6 Series TYPICAL CHARACTERISTICS 10 10 FES6G IF − FORWARD CURRENT (A) IF − FORWARD CURRENT (A) FES6D 1 o TA = −55 C 0.1 o TA = 25 C o TA = 75 C 0.01 o TA = 125 C 1 o TA = −55 C o 0.1 TA = 25 C o TA = 75 C 0.01 o TA = 125 C o TA = 150 C o TA = 150 C 0.001 0.0 0.2 0.4 0.6 0.8 1.0 0.001 0.0 1.2 0.2 VF − FORWARD VOLTAGE (V) 0.6 1.0 1.2 1.4 100 10 IR − LEAKAGE CURRENT (μA) FES6J 1 o TA = −55 C 0.1 o TA = 25 C o TA = 75 C 0.01 o TA = 125 C o TA = 150 C o TA = 125 C 1 0.1 0.01 0.001 0.5 1.0 o o TA = −55 C TA = 25 C TA = 150 C 1E−4 0.001 0.0 FES6D o TA = 75 C 10 o 1.5 2.0 0 2.5 50 100 150 200 VR − REVERSE VOLTAGE (V) VF − FORWARD VOLTAGE (V) Fig 4. Typical Reverse Characteristics for FES6D Fig 3. Typical Forward Characteristics for FES6J 100 100 o TA = 150 C FES6G o TA = 125 C IR − LEAKAGE CURRENT (μA) IR − LEAKAGE CURRENT (μA) 0.8 Fig 2. Typical Forward Characteristics for FES6G Fig 1. Typical Forward Characteristics for FES6D IF − FORWARD CURRENT (A) 0.4 VF − FORWARD VOLTAGE (V) 10 1 o TA = 75 C 0.1 0.01 o TA = 150 C FES6J o TA = 125 C 10 1 o TA = 75 C 0.1 0.01 o o TA = −55 C TA = 25 C o TA = 25 C 0.001 0 50 100 150 200 250 300 350 400 450 500 550 600 o TA = −55 C 0.001 0 VR − REVERSE VOLTAGE (V) 50 100 150 200 250 300 350 400 450 500 550 600 VR − REVERSE VOLTAGE (V) Fig 5. Typical Reverse Characteristics for FES6G Fig 6. Typical Reverse Characteristics for FES6J www.onsemi.com 3 FES6, NRVFES6 Series TYPICAL CHARACTERISTICS 1000 7 CJ − JUNCTION CAPACITANCE (pF) IF − AVERAGE FORWARD CURRENT (A) 8 TL (Cathode) 6 5 4 3 2 TA 1 25 50 75 100 125 150 100 FESD6J 10 FESD6D & FESD6G 1 0.1 0 0 f=1MHz 175 1 o 10 VR − REVERSE BIAS VOLTAGE (V) TEMPERATURE ( C) Fig 8. Typical Junction Capacitance Fig 7. Forward Current Derating Curve www.onsemi.com 4 100 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−277−3LD CASE 340BQ ISSUE O DOCUMENT NUMBER: DESCRIPTION: 98AON13861G TO−277−3LD DATE 30 SEP 2016 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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