FFB20UP20DN-F085

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Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FFB20UP20DN_F085 10A, 200V Ultrafast Dual Rectifiers tm Features Description „ High Reverse Voltage : VRRM = 200V The FFB20UP20DN_F085 is an ultrafast rectifier. It has a low forward voltage drop and is a silicon nitride passivated ion-implanted epitaxial planar construction. „ Avalanche Energy Rated „ Planar Construction This device is intended for use as a freewheeling/clamping rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Applications „ Output Rectifiers „ Switching Mode Power Supply „ Free-wheeling diode for motor application „ Power switching circuits „ Qualified to AEC Q101 „ RoHS Compliant Pin Assignments Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VRRM Peak Repetitive Reverse Voltage 200 V VRWM Working Peak Reverse Voltage 200 V VR DC Blocking Voltage 200 V If(avg) Average Rectified Forward Current 10 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 100 A TJ, TSTG Operating Junction and Storage Temperature -55 to +175 °C @ TC = 155oC Thermal Characteristics TC = 25°C unless otherwise noted Symbol RθJC1 Parameter Maximum Thermal Resistance, Junction to Case Max Units 3.5 °C/W Package Marking and Ordering Information Device Marking F20UP20DN Device FFB20UP20DN_F085 ©2010 Fairchild Semiconductor Corporation FFB20UP20DN_F085 Rev. A Package TO-263 1 Reel Size 13” Tape Width 24mm Quantity 800 www.fairchildsemi.com FFB20UP20DN_F085 10A, 200V Ultrafast Dual Rectifiers February 2010 Symbol VF 2 Parameter ο Min. Typ. Max Units IF = 10A IF = 10A TC = 25 C TC = 150οC - - 1.15 1.0 V V IR 2 VR = 200V VR = 200V TC = 25οC TC = 150οC - - 10 250 µA µA trr IF =1A, di/dt = 200A/µs, VCC = 130V IF =10A, di/dt = 200A/µs, VCC = 130V TC = 25 οC TC = 25οC - 15 27 25 40 ns ns ta tb Qrr IF =10A, di/dt = 200A/µs, VCC = 130V TC = 25οC TC = 25οC TC = 25οC - 21 6 50 - ns ns nC WAVL Avalanche Energy (L = 20mH) 10 - - mJ Notes 1: Rth_jc value is specified for each die 2: Pulse: Test Pulse width = 300S, Duty Cycle = 2% 2 FFB20UP20DN_F085 Rev. A 2 FFB20UP20DN_F085 10A, 200V Ultrafast Dual Rectifiers Electrical Characteristics TC = 25°C unless otherwise noted www.fairchildsemi.com 100 10 Reverse Current, IR [µA] Forward Current, IF [A] 20 o TC = 175 C o TC = 100 C 1 o TC = 25 C 10 o TC = 175 C 1 0.1 o TC = 100 C 0.01 o TC = 25 C 0.1 0.2 0.4 0.6 0.8 Forward Voltage, VF [V] 1.0 1E-3 1.2 Figure 1. Typical Forward Voltage Drop Reverse Recovery Time, trr [ns] Capacitance, cj [pF] 100 TC = 175 C o TC = 150 C 4 o TC = 25 C 2 150 200 di/dt [µ/s] 250 300 30 o TC = 150 C 25 o TC = 25 C 100 150 200 di/dt [A/µs] 250 300 12 10 DC 8 6 4 2 0 120 130 140 150 160 Case Temperature, TC (oC) 170 Figure 6. Case Temperature, Tc [oC] Figure 5. Typical Reverse Recovery Current FFB20UP20DN_F085 Rev. A 35 Average Recitified Forward Current, IF(AV) [A] Reverse Recovery Current, Irr [A] o 6 100 o TC = 175 C 40 Figure 4. Typical Reverse Recovery Time 8 0 50 IF = 10A 45 20 50 100 Figure 3. Typical Junction Capacitance IF = 10A 200 50 f = 1MHz 1 10 Reverse Voltage , VR [V] 50 100 150 Reverse Voltage , VR [V] Figure 2. Typical Reverse Current 400 10 0.1 0 3 www.fairchildsemi.com FFB20UP20DN_F085 10A, 200V Ultrafast Dual Rectifiers Typical Characteristics TC = 25°C unless otherwise noted 10.67 9.65 10.67 -A1.68 1.00 4 4 9.45 9.65 8.38 10.00 1.78 MAX 2 3 1 1.78 1.14 0.99 0.51 (2.12) 2 0.25 MAX PLASTIC BODY STUB 3.80 3 1 1.05 0.25 M 5.08 B AM LAND PATTERN RECOMMENDATION UNLESS NOTED, ALL DIMS TYPICAL 5.08 FRONT VIEW - DIODE PRODUCTS VERSION ALTERNATIVE SUPPLIER DETAIL 6.22 MIN 4 -B- 4.83 4.06 1.65 1.14 4 6.86 MIN 15.88 14.61 SEE DETAIL A 2 2 3 1 3 1 BACK VIEW - DIODE PRODUCTS VERSION ALTERNATIVE SUPPLIER DETAIL GAGE PLANE 0.74 0.33 0.25 2.79 1.78 0.25 MAX (5.38) SEATING PLANE SCALE: 2X 0.10 NOTES: UNLESS OTHERWISE SPECIFIED A) ALL DIMENSIONS ARE IN MILLIMETERS. B) REFERENCE JEDEC, TO-263, VARIATION AB. C) DIMENSIONING AND TOLERANCING PER DIMENSIONING AND TOLERANCING PER ASME Y14.5 - 2009. D) LOCATION OF THE PIN HOLE MAY VARY (LOWER LEFT CORNER, LOWER CENTER AND CENTER OF THE PACKAGE). E) LANDPATTERN RECOMMENDATION PER IPC TO254P1524X482-3N B F) FILENAME: TO263A02REV8 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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