FFB20UP20DN

FFB20UP20DN 10A, 200V Ultrafast Dual Rectifiers tm Features Description „ High Reverse Voltage : VRRM = 200V The FFB20UP20DN is an ultrafast rectifier. It has a low forward voltage drop and is a silicon nitride passivated ionimplanted epitaxial planar construction. „ Avalanche Energy Rated „ Planar Construction This device is intended for use as a freewheeling/clamping rectifier in a variety of switching power supplies and other power switching applications. Its low stored charge and hyperfast recovery minimize ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors. Applications „ Output Rectifiers „ Switching Mode Power Supply „ Free-wheeling diode for motor application „ Power switching circuits Pin Assignments Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Parameter Ratings Units VRRM Peak Repetitive Reverse Voltage 200 V VRWM Working Peak Reverse Voltage 200 V VR DC Blocking Voltage 200 V If(avg) Average Rectified Forward Current 10 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 100 A TJ, TSTG Operating Junction and Storage Temperature -55 to +175 °C @ TC = 155oC Thermal Characteristics TC = 25°C unless otherwise noted Symbol RθJC1 Parameter Maximum Thermal Resistance, Junction to Case Max Units 3.5 °C/W Package Marking and Ordering Information Device Marking F20UP20DN Device F20UP20DN ©2006 Fairchild Semiconductor Corporation FFB20UP20DN Rev. A Package TO-263 Reel Size 13” 1 Tape Width 24mm Quantity 800 www.fairchildsemi.com FFB20UP20DN 10A, 200V Ultrafast Dual Rectifiers June 2006 Symbol VF 2 Parameter ο Min. Typ. Max Units IF = 10A IF = 10A TC = 25 C TC = 150οC - - 1.15 1.0 V V IR 2 VR = 200V VR = 200V TC = 25οC TC = 150οC - - 10 250 µA µA trr IF =1A, di/dt = 200A/µs, VCC = 130V IF =10A, di/dt = 200A/µs, VCC = 130V TC = 25 οC TC = 25οC - 15 27 25 40 ns ns ta tb Qrr IF =10A, di/dt = 200A/µs, VCC = 130V TC = 25οC TC = 25οC TC = 25οC - 21 6 50 - ns ns nC WAVL Avalanche Energy (L = 20mH) 10 - - mJ Notes 1: Rth_jc value is specified for each die 2: Pulse: Test Pulse width = 300S, Duty Cycle = 2% 2 FFB20UP20DN Rev. A 2 www.fairchildsemi.com FFB20UP20DN 10A, 200V Ultrafast Dual Rectifiers Electrical Characteristics TC = 25°C unless otherwise noted 100 10 Reverse Current, IR [µA] Forward Current, IF [A] 20 o TC = 175 C o TC = 100 C 1 o TC = 25 C 10 o TC = 175 C 1 0.1 o TC = 100 C 0.01 o TC = 25 C 0.1 0.2 0.4 0.6 0.8 Forward Voltage, VF [V] 1.0 1E-3 1.2 Figure 1. Typical Forward Voltage Drop Reverse Recovery Time, trr [ns] Capacitance, cj [pF] 100 TC = 175 C o TC = 150 C 4 o TC = 25 C 2 150 200 di/dt [µ/s] 250 300 30 o TC = 150 C 25 o TC = 25 C 100 150 200 di/dt [A/µs] 250 300 12 10 DC 8 6 4 2 0 120 130 140 150 160 Case Temperature, TC (oC) 170 Figure 6. Case Temperature, Tc [oC] Figure 5. Typical Reverse Recovery Current FFB20UP20DN Rev. A 35 Average Recitified Forward Current, IF(AV) [A] Reverse Recovery Current, Irr [A] o 6 100 o TC = 175 C 40 Figure 4. Typical Reverse Recovery Time 8 0 50 IF = 10A 45 20 50 100 Figure 3. Typical Junction Capacitance IF = 10A 200 50 f = 1MHz 1 10 Reverse Voltage , VR [V] 50 100 150 Reverse Voltage , VR [V] Figure 2. Typical Reverse Current 400 10 0.1 0 3 www.fairchildsemi.com FFB20UP20DN 10A, 200V Ultrafast Dual Rectifiers Typical Characteristics TC = 25°C unless otherwise noted Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage Figure 9. Maximum Continuous Drain Current vs Ambient Temperature Figure 10. Forward Bias Safe Operating Area Figure 11. Single Pulse Maximum Power Dissipation Figure 12. Transient Thermal Response Curve FFB20UP20DN Rev. A 4 www.fairchildsemi.com FFB20UP20DN 10A, 200V Ultrafast Dual Rectifiers Typical Characteristics TC = 25°C unless otherwise noted TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20