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FFB5551 — Dual-Chip NPN General-Purpose Amplifier
FFB5551
Dual-Chip NPN General-Purpose Amplifier
Features
• This device is designed for general-purpose high voltage amplifier.
• E1 is Pin 1.
E2
B2
E2
C2
B2
B1
C1
E1
C1
C2
B1
E1
SC70-6
Mark: .P1
Figure 1. Device Package
Figure 2. Internal Connection
Ordering Information
Part Number
Top Mark
Package
Packing Method
FFB5551
P1
SC70 6L
Tape and Reel
Absolute Maximum Ratings(1),(2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
Collector-Emitter Voltage
160
V
VCBO
Collector-Base Voltage
180
V
VEBO
Emitter-Base Voltage
6.0
V
Collector Current - Continuous
200
mA
-55 to 150
°C
IC
TJ, TSTG
Operating and Storage Junction Temperature Range
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or lowduty-cycle operations.
© 2003 Semiconductor Components Industries, LLC.
October-2017,Rev. 2
Publication Order Number:
FFB5551/D
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJA
Parameter
Max.
Unit
Total Device Dissipation
200
mW
Derate Above 25°C
1.6
mW/°C
Thermal Resistance, Junction-to-Ambient
625
°C/W
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
(4)
Conditions
Min.
Max.
Unit
BVCEO
Collector-Emitter Breakdown Voltage
IC = 1.0 mA, IB = 0
160
V
BVCBO
Collector-Base Breakdown Voltage
IC = 100 μA, IE = 0
180
V
BVEBO
Emitter-Base Breakdown Voltage
IE = 10 μA, IC = 0
6.0
V
VCB = 120 V, IE = 0
50
nA
ICBO
Collector Cut-Off Current
VCB = 120 V, IE = 0,
TA = 100°C
50
μA
IEBO
Emitter Cut-Off Current
VEB = 4.0 V, IC = 0
50
nA
VCE = 5 V, IC = 1.0 mA
80
hFE
DC Current Gain(4)
VCE = 5 V, IC = 10 mA
80
VCE = 5 V, IC = 50 mA
30
VCE(sat)
Collector-Emitter Saturation Voltage(4)
VBE(sat)
Base-Emitter Saturation Voltage(4)
fT
Cobo
250
IC = 10 mA, IB = 1.0 mA
0.15
IC = 50 mA, IB = 5.0 mA
0.20
IC = 10 mA, IB = 1.0 mA
1.0
IC = 50 mA, IB = 5.0 mA
1.0
Current Gain Bandwidth Product
VCE = 10 V, IC = 10 mA,
f = 100 MHz
Output Capacitance
VCB = 10 V, IE = 0,
f = 1.0 MHz
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
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2
100
V
V
300
MHz
6.0
pF
FFB5551 — Dual-Chip NPN General-Purpose Amplifier
Thermal Characteristics(3)
0
VCE(SAT)[V], SATURATION VOLTAGE
Ta=125 C
hFE, DC CURRENT GAIN
100
0
Ta=25 C
0
Ta=-40 C
10
1
0.1
1E-4
1E-3
0.01
0.1
IC=10IB
0
10
Ta=25 C
1
0
Ta=125 C
0
Ta=-40 C
0.1
1
1E-3
0.01
IC[A], COLLECTOR CURRENT
Figure 4. Collector-Emitter Saturation Voltage
10
0.50
0
Ta=25 C
0
Ta=-40 C
VCE=5V
0.45
IC=10IB
IC[A], COLLECTOR CURRENT
VBE(SAT)[V], SATURATION VOLTAGE
0.1
IC[A], COLLECTOR CURRENT
Figure 3. DC Current Gain
1
Ta=25 C
0
0
Ta=25 C
0
Ta=125 C
0
Ta=25 C
0.40
0.35
0.30
0.25
0.20
0
Ta=25 C
0.15
0
Ta=125 C
0.10
0
Ta=-40 C
0.05
0.1
1E-3
0.01
0.1
1
0.00
0.2
IC[A], COLLECTOR CURRENT
0.4
0.6
0.8
1.0
1.2
VBE[V], BASE-EMITTER VOLTAGE
Figure 5. Base-Emitter Saturation Voltage
Figure 6. Base-Emitter On Voltage
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3
1.4
FFB5551 — Dual-Chip NPN General-Purpose Amplifier
Typical Performance Characteristics
SYMM
C
L
2.00±0.20
0.65
A
0.50 MIN
6
4
B
PIN ONE
1.25±0.10
1
1.90
3
0.30
0.15
(0.25)
0.40 MIN
0.10
0.65
A B
1.30
LAND PATTERN RECOMMENDATION
1.30
1.00
0.80
SEE DETAIL A
1.10
0.80
0.10 C
0.10
0.00
C
2.10±0.30
SEATING
PLANE
NOTES: UNLESS OTHERWISE SPECIFIED
GAGE
PLANE
(R0.10)
0.25
0.10
0.20
A) THIS PACKAGE CONFORMS TO EIAJ
SC-88, 1996.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE BURRS
OR MOLD FLASH.
D) DRAWING FILENAME: MKT-MAA06AREV6
30°
0°
0.46
0.26
SCALE: 60X
Figure 7. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE
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4
FFB5551 — Dual-Chip NPN General-Purpose Amplifier
Physical Dimensions
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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