FFD20UP20S

FFD20UP20S tm 20 A, 200 V, Ultrafast Diode Features • Ultrafast Recovery, Trr = 45 ns (@ IF = 20 A) • Max Forward Voltage, VF = 1.15 V (@ TC = 25°C) The FFD20UP20S is an ultrafast diode with low forward voltage drop and rugged UIS capability. This device is intended for use as freewheeling and clamping diodes in a variety of switching power supplies and other power switching applications. It is specially suited for use in switching power supplies and industrial applicationa as welder and UPS application. • Reverse Voltage, VRRM = 200 V • Avalanche Energy Rated • RoHS Compliant Applications • Power Switching Circuits • Output Rectifiers • Freewheeling Diodes • Switching Mode Power Supply 1 3 3 2 1 2 1, 2 ANODE 3. CATHODE (FLANGE) Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VRRM Peak Repetitive Reverse Voltage IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave IF(AV) TJ, TSTG Parameter @ TC = 123oC Average Rectified Forward Current Operating and Storage Temperature Range Rating 200 Unit V 20 A 200 A -65 to +150 oC Rating Unit Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case o 1.9 C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity F20UP20S FFD20UP20S D-PAK 13” Dia - 2500 ©2009 Fairchild Semiconductor Corporation FFD20UP20S Rev. A 1 www.fairchildsemi.com FFD20UP20S 20 A, 200 V, Ultrafast Diode June 2009 Symbol Parameter VF * Maximum Instantaneous Forward Voltage IF = 20 A IF = 20 A IF = 30 A IR* Maximum Instantaneous Reverse Current @ rated VR trr Reverse Recovery Time (IF = 20 A, di/dt = 200 A/μs) WAVL Avalanche Energy ( L = 40 mH) TC = 25oC TC = 100oC TC = 25oC TC = 25oC TC = 100oC Min. Typ. Max. - 0.94 0.84 1.00 1.15 1.05 - - - 100 500 μA - 22 45 ns 20 - - mJ Unit V * Pulse Test: Pulse Width = 300 μs, Duty Cycle = 2% * Test Circuit and Waveforms ©2009 Fairchild Semiconductor Corporation FFD20UP20S Rev. A 2 www.fairchildsemi.com FFD20UP20S 20 A, 200 V, Ultrafast Diode Electrical Characteristics TC = 25oC unless otherwise noted Figure 2. Typical Reverse Current vs. Reverse Voltage Figure 1. Typical Forward Voltage Drop vs. Forward Current 10 100 o TC = 125 C 1 Reverse Current , IR [μA] o Forward Current, IF [A] TC = 125 C 10 o TC = 25 C o TC = 75 C 1 0.1 o TC = 75 C 0.01 0.001 o TC = 25 C 0.1 0.0 0.3 0.6 0.9 1.2 Forward Voltage, VF [V] 1E-4 10 1.5 Figure 3.Typical Junction Capacitance 40 IF = 20A Reverse Recovery Time, trr [ns] Capacitances , Cj [pF] Typical Capacitance at 0V = 335 pF 100 1 10 Reverse Voltage, VR [V] 30 o TC = 125 C o 20 TC = 75 C o TC = 25 C 10 100 100 200 300 di/dt [A/μs] 400 500 Figure 6. Forward Current Derating Curve Figure 5. Typical Reverse Recovery Current vs. di/dt 80 Average Forward Current, IF(AV) [A] 8 Reverse Recovery Current, Irr [A] 200 Figure 4. Typical Reverse Recovery Time vs. di/dt 1000 10 0.1 50 100 150 Reverse Voltage, VR [V] FFD20UP20S 20 A, 200 V, Ultrafast Diode Typical Performance Characteristics o TC = 125 C 6 o TC = 75 C 4 o TC = 25 C 2 60 40 20 IF = 20A 0 100 200 300 di/dt [A/μs] ©2009 Fairchild Semiconductor Corporation FFD20UP20S Rev. A 400 0 25 500 3 50 75 100 125 o Case temperature, TC [ C] 150 www.fairchildsemi.com FFD20UP20S 20 A, 200 V, Ultrafast Diode Mechanical Dimensions D-PAK Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation FFD20UP20S Rev. A 4 www.fairchildsemi.com FFD20UP20S 20 A, 200 V, Ultrafast Diode ©2009 Fairchild Semiconductor Corporation FFD20UP20S Rev. A 5 www.fairchildsemi.com