FFH15S60STU

FFH15S60S tm 15 A, 600 V, STEALTH™ II Diode Features • Stealth Recovery, Trr = 35 ns (@ IF = 15 A) • Max Forward Voltage, VF = 2.6 V (@ TC = 25°C) The FFH15S60S is a STEALTH™ II diode with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended for use as freewheeling of boost diode in switching power supplies and other power swithching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors. • 600V Reverse Voltage and High Reliability • Avalanche Energy Rated • RoHS compliant Applications • General Purpose • Switching Mode Power Supply • Boost Diode in Continuous Mode Power Factor • Power Switching Circuits TO-247-2L 1. Cathode 1. Cathode 2. Anode 2. Anode Absolute Maximum Ratings TC = 25oC unless otherwise noted Symbol VRRM Peak Repetitive Reverse Voltage Parameter Ratings 600 Unit V VRWM Working Peak Reverse Voltage 600 V VR DC Blocking Voltage 600 V IF(AV) Average Rectified Forward Current 15 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave TJ, TSTG @ TC = 120oC 150 Operating and Storage Temperature Range A -65 to +150 o Ratings Unit C Thermal Characteristics Symbol RθJC Parameter Maximum Thermal Resistance, Junction to Case o 1.4 C/W Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity F15S60S FFH15S60STU TO-247-2L - - 50 ©2007 Fairchild Semiconductor Corporation FFH15S60S Rev. A 1 www.fairchildsemi.com FFH15S60S 15 A, 600 V, STEALTH™ II Diode September 2007 Symbol Min. Typ. Max. Unit VF 1 IF = 15A IF = 15A Parameter TC = 25oC TC = 125oC - 2.1 1.6 2.6 - V IR1 VR = 600V VR = 600V TC = 25oC TC = 125oC - - 100 500 µA Trr IF = 1A, di/dt = 100A/µs, VR = 30V TC = 25oC - 21 30 ns - 23 2.5 0.7 29 35 - ns A - 55 4.3 1.1 118 - nC 20 - - mJ Trr Irr S factor Qrr IF = 15A, di/dt = 200A/µs, VR = 390V Trr Irr S factor Qrr IF = 15A, di/dt = 200A/µs, VR = 390V WAVL Avalanche Energy ( L = 40mH) o TC = 25 C TC = 125oC Notes: 1: Pulse: Test Pulse width = 300µs, Duty Cycle = 2% Test Circuit and Waveforms ©2007 Fairchild Semiconductor Corporation FFH15S60S Rev. A 2 nC ns A FFH15S60S 15 A, 600 V, STEALTH™ II Diode Electrical Characteristics TC = 25oC unless otherwise noted www.fairchildsemi.com Figure 1. Typical Forward Voltage Drop vs. Forward Current Figure 2. Typical Reverse Current vs. Reverse Voltage 100 70 o 10 Reverse Current, IR [µA] Forward Current, IF [A] TC = 125 C o TC = 75 C o TC = 25 C 1 o TC = 125 C 10 o TC =75 C 1 0.1 o TC = 25 C 0.01 0.1 0 1 2 3 Forward Voltage, VF [V] 10 4 Figure 3. Typical Junction Capacitance Capacitances, Cj [pF] 120 90 60 1 10 Reverse Voltage, VR [V] 600 IF = 15A 50 o 40 TC = 75 C 30 TC = 25 C 20 100 100 Figure 5. Typical Reverse Recovery Current vs. di/dt o TC = 125 C Reverse Recovery Time, Trr [ns] Typical Capacitance at 0V = 180 pF 30 0.1 500 Figure 4. Typical Reverse Recovery Time vs. di/dt 150 o 200 300 400 di/dt [A/µs] 500 600 Figure 6. Forward Current Derating Curve 7 50 6 Average Forward Current, IF(AV) [A] Reverse Recovery Current, Irr [A] 200 300 400 Reverse Voltage, VR [V] 60 180 o TC = 125 C 5 4 o TC = 75 C 3 o TC = 25 C 2 IF = 15A 1 100 100 200 300 400 500 30 DC 20 10 0 25 600 di/dt [A/µs] ©2007 Fairchild Semiconductor Corporation FFH15S60S Rev. A 40 3 50 75 100 125 o Case temperature, TC [ C] 150 www.fairchildsemi.com FFH15S60S 15 A, 600 V, STEALTH™ II Diode Typical Performance Characteristics FFH15S60S 15 A, 600 V, STEALTH™ II Diode Mechanical Dimensions TO-247-2L Dimensions in Millimeters ©2007 Fairchild Semiconductor Corporation FFH15S60S Rev. A 4 www.fairchildsemi.com FFH15S60S 15 A, 600 V, STEALTH™ II Diode ©2007 Fairchild Semiconductor Corporation FFH15S60S Rev. A 5 www.fairchildsemi.com